Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK http://onsemi.com Features • On-resistance RDS(on)1=5.0mΩ(typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS Unit -60 V ±20 V -100 A -400 A Gate to Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD Tc=25°C 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg - 55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 656 mJ Avalanche Current *2 IAV -75 A Note : *1 VDD=-36V, L=100μH, IAV=-75A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 Ordering & Package Information Device Shipping note Pb-Free ATP304-TL-H 1.5 6.5 ATP304-TL-H ATPAK 3,000 pcs. / reel Packing Type: TL 4.6 2.6 and Halogen-Free Marking ATP304 0.4 0.4 0.5 4 Package LOT No. 3 0.8 0.6 0.4 2.3 0.1 2.3 6.05 4.6 9.5 0.55 0.7 0.5 2 1 1.7 7.3 TL 1: Gate 2: Drain 3: Source 4: Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 June, 2013 60513 TKIM TC-00002952 No.A2192-1/6 ATP304 Electrical Characteristics at Ta = 25°C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -60 -10 μA V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=-10V, ID=-1mA Forward Transfer Admittance | yfs | VDS=-10V, ID=-50A -1.2 100 -2.6 V Static Drain to Source On-State RDS(on)1 ID=-50A, VGS=-10V 5.0 6.5 mΩ Resistance RDS(on)2 ID=-50A, VGS=-4.5V 6.4 8.9 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf 460 ns Total Gate Charge Qg 250 nC Gate to Source Charge Qgs 55 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD Reverse Recoverry Time trr See Fig.3 Reverse Recoverry Charge Qrr IS=-100A, VGS= 0V, di/dt=--100A/μs S 13000 pF 1080 pF Crss 760 pF td(on) 80 ns 650 ns 780 ns VDS=-20V, f=1MHz See Fig.2 VDS=-36V, VGS=-10V, ID=-100A 50 IS=-100A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit -1.0 nC -1.5 V 90 ns 245 nC Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit D ATP304 G L S VDD Driver MOSFET No.A2192-2/6 ATP304 No.A2192-3/6 ATP304 No.A2192-4/6 ATP304 Outline Drawing Land Pattern Example ATP304-TL-H Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A2192-5/6 ATP304 Note on usage : Since the ATP304 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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