MCH6444 Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 98mΩ@ 10V ID Max 35V 166mΩ@ 4.5V 2.5A 201mΩ@ 4V Typical Applications • Load Switch • Motor Drive ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 Gate to Source Voltage VGSS ID ±20 V 2.5 A Drain Current (DC) V IDP 10 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C PACKING TYPE : TL ZT TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol RθJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 2 MARKING LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% 3 Value 156.2 1 Unit °C/W Publication Order Number : MCH6444/D MCH6444 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V 35 VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A typ max Unit V 1 μA ±10 μA 2.6 V 1.7 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V 75 98 mΩ ID=0.75A, VGS=4.5V 118 166 mΩ RDS(on)3 Ciss ID=0.75A, VGS=4V 143 201 mΩ Output Capacitance Coss VDS=20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss 22 pF Turn-ON Delay Time td(on) 4.2 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 186 See specified Test Circuit VDS=20V, VGS=10V, ID=2.5A pF 4.7 ns 15 ns 5.7 ns 4 nC 0.9 nC 0.7 nC VSD Forward Diode Voltage IS=2.5A, VGS=0V 0.86 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=15V VIN ID=1.5A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω MCH6444 S www.onsemi.com 2 MCH6444 www.onsemi.com 3 MCH6444 www.onsemi.com 4 MCH6444 PACKAGE DIMENSIONS unit : mm SC-88FL / MCPH6 CASE 419AS ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) ZT SC-88FL / MCPH6 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH6444-TL-H MCH6444-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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