Ordering number : ENA0774C 2SK4096LS N-Channel Power MOSFET http://onsemi.com 500V, 8A, 850mΩ, TO-220F-3FS Features • • ON-resistance RDS(on)=0.65Ω (typ.) 10V drive • Input capacitance Ciss=600pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 500 V ±30 V 8 A IDc*1 Limited only by maximum temperature Tch=150°C IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 7.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 32 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 33 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 354 mJ Avalanche Current *5 Tc=25°C (Our ideal heat dissipation condition)*3 8 A Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=8A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2SK4096LS-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 15.8 15.87 2 K4096 LOT No. 1 12.98 2.76 1.47 MAX 3 0.8 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source TO-220F-3FS Semiconductor Components Industries, LLC, 2013 July, 2013 91212 TKIM TC-00002810/O1007 TIIM TC-00000921/51607QB TIIM TC-00000725 No. A0774-1/7 2SK4096LS Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=4A Static Drain-to-Source On-State Resistance RDS(on) ID=4A, VGS=10V Input Capacitance Ciss min typ Unit max 500 ID=10mA, VGS=0V VDS=400V, VGS=0V V 100 μA ±100 nA 3 5 2.2 4.5 V S 0.65 0.85 Ω 600 pF 130 pF 28 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 18.5 ns Rise Time tr td(off) 46 ns 75 ns Turn-OFF Delay Time Fall Time VDS=30V, f=1MHz See Fig.2 tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=8A IS=8A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit 33 ns 24 nC 4.5 nC 14 nC 0.9 VDD=200V 10V 0V L ID=4A RL=50Ω VIN ≥50Ω RG D VOUT PW=10μs D.C.≤0.5% 2SK4096LS G VDD 50Ω V Fig.2 Switching Time Test Circuit VIN 10V 0V 1.2 2SK4096LS P.G RGS=50Ω S Ordering Information Device 2SK4096LS-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A0774-2/7 2SK4096LS ID -- VDS 25 ID -- VGS 25 Tc=25°C 15V 20 Tc= --25°C 20 10V 8V Drain Current, ID -- A Drain Current, ID -- A VDS=20V 15 10 25°C 75°C 15 10 5 5 6V VGS=5V 0 0 20 25 30 Drain-to-Source Voltage, VDS -- V 0 1.5 Tc=75°C 1.0 25°C --25°C 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Gate-to-Source Voltage, VGS -- V 2 1.0 0.6 0.4 0.2 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 0 25 50 75 100 125 150 IT12330 IS -- VSD VGS=0V 1.0 7 5 3 2 0.01 0.2 3 0.6 0.8 1.0 1.2 VDD=200V VGS=10V 1.4 IT12332 Ciss, Coss, Crss -- VDS 3 5 0.4 Diode Forward Voltage, VSD -- V IT12331 SW Time -- ID 7 --25 3 2 3 2 5 =1 S VG 0.8 3 3 =4 , ID 0V 1.0 5 2 20 IT12328 A 1.2 0.1 7 5 7 2 0.1 18 1.4 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Tc 3 16 10 7 5 °C -25 =C 75° 5 14 Case Temperature, Tc -- °C C 25° 7 12 1.6 0 --50 10 VDS=10V 10 10 RDS(on) -- Tc IT12329 | yfs | -- ID 2 f=1MHz 2 1000 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 5.5 8 1.8 2.5 0 5.0 6 2.0 ID=4A 0.5 4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 3.0 2 IT12327 --25°C 15 25°C 10 5°C 5 Tc=7 0 2 td (off) 100 7 5 tf tr 3 5 3 2 Coss 100 7 5 Crss 3 td(on) 2 Ciss 7 2 10 10 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT12333 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12334 No. A0774-3/7 2SK4096LS VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 IDpack(*2)=7.1A 1.0 7 5 3 2 PD -- Ta 1.5 1.0 0.5 10μ s Operation in this area is limited by RDS(on). 0.1 7 5 3 2 *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 IT16936 PD -- Tc 40 2.0 0μ s Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 7 5 3 2 10 1m 10 s 10 ms 0m s DC op era tio n IDc(*1)=8A IT12335 35 33 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12337 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12338 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=32A(PW≤10μs) 0.01 1.0 25 Total Gate Charge, Qg -- nC 2.5 ASO 7 5 3 2 VDS=200V ID=8A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0774-4/7 2SK4096LS Magazine Specification 2SK4096LS-1E No. A0774-5/7 2SK4096LS Outline Drawing 2SK4096LS-1E Mass (g) Unit 1.8 mm * For reference No. A0774-6/7 2SK4096LS Note on usage : Since the 2SK4096LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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