Ordering number : ENA0869A 2SK4177 N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-263-2L Features • • ON-resistance RDS(on)=10Ω(typ.) 10V drive • Input capacitance Ciss=380pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 1500 V ±20 V Allowable Power Dissipation ID IDP PD 80 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 41 mJ 2 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C 2 A 4 A Note : *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7535-001 • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel 2SK4177-DL-1E 4.5 4 8.0 Packing Type: DL Marking 1.75 1.2 10.0 1.3 5.3 0.9 7.9 9.2 13.4 1.4 3.0 K4177 LOT No. DL 0.254 2 3 1.27 0.8 0.5 2.54 2, 4 0 to 0.25 2.4 2.54 Electrical Connection 1.35 1 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L 1 3 D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7 2SK4177 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min V(BR)DSS IDSS ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance IGSS VGS(off) | yfs | VDS=20V, ID=1A 0.7 Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD μA ±10 μA 3.5 1.4 See Fig.2 13 pF 70 pF 40 pF 12 ns 37 ns ns 59 ns 37.5 nC 2.7 nC S 1.2 V Fig.2 Switching Time Test Circuit VDD=200V VIN ID=1A RL=190Ω VIN D PW≤10μs D.C.≤1% 2SK4177 nC 0.88 10V 0V L Ω 380 20 IS=2A, VGS=0V V S 152 VDS=200V, VGS=10V, ID=2A G 50Ω V 100 10 ≥50Ω RG 10V 0V Unit max 1500 VDS=30V, f=1MHz Fig.1 Unclamped Inductive Switching Test Circuit D typ VDD VOUT G 2SK4177 P.G 50Ω S Ordering Information Device 2SK4177-DL-1E Package Shipping memo TO-263-2L 800pcs./reel Pb Free No. A0869-2/7 2SK4177 ID -- VDS 4.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A VGS=10V Tc=75°C 25°C 10 --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 2 °C 25 1.0 5°C --2 = °C Tc 75 3 2 0.1 --25 0 25 5 7 2 0.1 3 5 7 Drain Current, ID -- A 2 1.0 150 IT07133 3 2 0.1 7 5 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT07135 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td(off) 2 100 tf 7 5 3 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 125 1.0 7 5 IT07134 VDD=200V VGS=10V 3 100 3 2 0.01 0.2 3 SW Time -- ID 5 75 VGS=0V 3 2 3 50 IS -- VSD 10 7 5 3 5 5 Case Temperature, Tc -- °C VDS=20V 7 10 IT07132 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 20 yfs -- ID 5 Switching Time, SW Time -- ns 18 15 0 --50 0 0 20 75°C 25°C --25°C 15 25 Tc= Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 20 IT07131 RDS(on) -- Tc 30 ID=1A 25 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT07130 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No. A0869-3/7 2SK4177 VGS -- Qg 10 9 7 6 5 4 3 2 0 10 0 20 30 Total Gate Charge, Qg -- nC 0μ 10 DC 3 2 40 20 op s 0.1 7 5 ati on Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1k Drain-to-Source Voltage, VDS -- V Avalanche Energy derating factor -- % 60 s 1m m er 2 3 IT16905 EAS -- Ta 120 80 10 0m s s Operation in this area is limited by RDS(on). IT07138 PD -- Tc 100 μs 10 ID=2A 0.01 1.0 40 10 IDP=4A(PW≤10μs) 1.0 7 5 3 2 1 Allowable Power Dissipation, PD -- W ASO 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 10 7 5 VDS=200V ID=2A 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12898 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0869-4/7 2SK4177 Taping Specification 2SK4177-DL-1E No. A0869-5/7 2SK4177 Outline Drawing 2SK4177-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No. A0869-6/7 2SK4177 Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A0869-7/7