BBS3002/D - ON Semiconductor

Ordering number : ENA1357C
BBS3002
P-Channel Power MOSFET
http://onsemi.com
–60V, –100A, 5.8mΩ, TO-263-2L/TO-263
Features
•
•
ON-resistance RDS(on)1=4.4mΩ (typ.)
Input capacitance Ciss=13200pF (typ.)
•
TO-263
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
--60
V
±20
V
--100
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
340
mJ
--60
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--400
A
90
W
°C
Note : *1 VDD=--30V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
VDS=--10V, ID=--50A
Static Drain to Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
ID=--1mA, VGS=0V
Ratings
min
typ
max
--60
V
--1.2
54
Unit
--1
μA
±10
μA
--2.6
90
V
S
4.4
5.8
mΩ
6.4
9.0
mΩ
13200
pF
1300
pF
Crss
950
pF
95
ns
Rise Time
td(on)
tr
1000
ns
Turn-OFF Delay Time
td(off)
800
ns
Fall Time
tf
820
ns
Total Gate Charge
Qg
280
nC
Gate to Source Charge
Qgs
50
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--100A
55
IS=--100A, VGS=0V
--1.0
nC
--1.5
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
91113 TKIM TC-00002965/60612 TKIM/12512 TKIM TC-00002684/ No. A1357-1/6
N1208QA MSIM TC-00001708
BBS3002
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
14
12
10
8
Tc=75°C
25°C
4
--25°C
2
--3
--4
--5
--6
--7
--8
--9
Gate to Source Voltage, VGS -- V
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
25°
C
--4.0
--4.5
Gate to Source Voltage, VGS -- V
Single pulse
10
50A
8
=
VGS
= -, ID
--4V
0A
--5
I =
0V, D
1
=
VGS
6
4
2
0
--50
--10
--5.0
IT14174
RDS(on) -- Tc
12
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
7
5
3
2
150
IT14176
IS -- VSD
--1K
VDS= --10V
2
--0.5
IT14175
| yfs | -- ID
3
VGS=0V
Single pulse
--100
=
Tc
10
5
--2
7
5
°C
75
3
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--25°
C
2
°C
--10
25°C
°C
25
3
7
5
3
2
5°C
100
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
°C
C
16
6
0
Tc=
7
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID= --50A
Single pulse
18
0
--2.0
IT14173
RDS(on) -- VGS
0
--2
--0.01
2
1.0
7
--0.1
7
5
3
2
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
5 7 --100
--0.001
0
--0.2
--0.4
SW Time -- ID
--0.8
--1.0
--1.2
IT17199
Ciss, Coss, Crss -- VDS
3
VDD= --30V
VGS= --10V
f=1MHz
2
Ciss
2
td(off)
10000
1000
7
tf
5
3
2
tr
100
7
5
3
2
Coss
Crss
1000
td(on)
7
7
5
--0.1
--0.6
Diode Forward Voltage, VSD -- V
IT14177
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--1.8
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
0
20
3
25°
--20
Drain to Source Voltage, VDS -- V
5
--60
--40
VGS= --3V
--20
0
--80
5°C
--60
--100
°C
--80
--120
Tc=
7
--100
--160
--25
V
--120
--40
Tc= -25
--140
Drain Current, ID -- A
--160
VDS= --10V
--180
--4V
--1
0V
Drain Current, ID -- A
--140
--6
--8
V
--180
ID -- VGS
--200
Tc=25°C
75°C
ID -- VDS
--200
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT14179
5
0
--5
--10
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT14180
No. A1357-2/6
BBS3002
VGS -- Qg
--10
VDS= --30V
ID= --100A
--9
--8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
--1000
7
5
3
2
--7
--6
--5
--4
--3
--2
--1
0
0
50
100
150
200
250
Total Gate Charge, Qg -- nC
PD -- Tc
300
70
60
50
40
30
20
10
20
40
60
80
100
10
120
Case Temperature, Tc -- °C
140
160
IT14183
1m
s
10
10
μs
0μ
s
m
DC
Operation in
this area is
limited by RDS(on).
--10
7
5
3
2
--1.0
7
5
3
2
s
10
0m
s
op
er
ati
on
Tc=25°C
2
3
5 7 --10
2
3
5 7 --100
IT14182
Drain to Source Voltage, VDS -- V
EAS -- Ta
120
80
0
PW≤10μs
ID= --100A
IT14181
90
0
IDP= --400A
--0.1 Single pulse
2 3
5 7 --1.0
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
100
--100
7
5
3
2
ASO
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14184
No. A1357-3/6
BBS3002
Package Dimensions
BBS3002-DL-1E
D2PAK/TO-263-2L
CASE 418AP
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
4: Drain
Land Pattern Example
Packing Type: DL
Electrical Connection
2, 4
DL
1
3
No. A1357-4/6
BBS3002
Package Dimensions
BBS3002-TL-1E
Unit : mm
1: Gate
2: Drain
3: Source
4: Drain
Land Pattern Example
Packing Type: TL
Electrical Connection
2, 4
TL
1
3
No. A1357-5/6
BBS3002
Ordering & Package Information
Device
Package
BBS3002-DL-1E
TO-263-2L
SC-83, TO-263
BBS3002-TL-1E
TO-263
Marking
Shipping
memo
800
pcs./reel
Pb-Free
BS3002
LOT No.
Fig.1 Unclamped Inductive Switching Test Circuit
D
Fig.2 Switching Time Test Circuit
L
0V
--10V
≥50Ω
RG
BBS3002
50Ω
ID= --50A
RL=0.6Ω
VIN
G
0V
--10V
VDD= --30V
VIN
S
VDD
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
BBS3002
50Ω
S
Note on usage : Since the BBS3002 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1357-6/6