Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET http://onsemi.com –60V, –100A, 5.8mΩ, TO-263-2L/TO-263 Features • • ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) • TO-263 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --60 V ±20 V --100 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 340 mJ --60 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --400 A 90 W °C Note : *1 VDD=--30V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS VDS=--60V, VGS=0V VGS=±16V, VDS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--50A Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--50A, VGS=--10V ID=--50A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance ID=--1mA, VGS=0V Ratings min typ max --60 V --1.2 54 Unit --1 μA ±10 μA --2.6 90 V S 4.4 5.8 mΩ 6.4 9.0 mΩ 13200 pF 1300 pF Crss 950 pF 95 ns Rise Time td(on) tr 1000 ns Turn-OFF Delay Time td(off) 800 ns Fall Time tf 820 ns Total Gate Charge Qg 280 nC Gate to Source Charge Qgs 50 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See Fig.2 VDS=--30V, VGS=--10V, ID=--100A 55 IS=--100A, VGS=0V --1.0 nC --1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2013 September, 2013 91113 TKIM TC-00002965/60612 TKIM/12512 TKIM TC-00002684/ No. A1357-1/6 N1208QA MSIM TC-00001708 BBS3002 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 14 12 10 8 Tc=75°C 25°C 4 --25°C 2 --3 --4 --5 --6 --7 --8 --9 Gate to Source Voltage, VGS -- V --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 25° C --4.0 --4.5 Gate to Source Voltage, VGS -- V Single pulse 10 50A 8 = VGS = -, ID --4V 0A --5 I = 0V, D 1 = VGS 6 4 2 0 --50 --10 --5.0 IT14174 RDS(on) -- Tc 12 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 7 5 3 2 150 IT14176 IS -- VSD --1K VDS= --10V 2 --0.5 IT14175 | yfs | -- ID 3 VGS=0V Single pulse --100 = Tc 10 5 --2 7 5 °C 75 3 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --25° C 2 °C --10 25°C °C 25 3 7 5 3 2 5°C 100 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S °C C 16 6 0 Tc= 7 Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID= --50A Single pulse 18 0 --2.0 IT14173 RDS(on) -- VGS 0 --2 --0.01 2 1.0 7 --0.1 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 --100 --0.001 0 --0.2 --0.4 SW Time -- ID --0.8 --1.0 --1.2 IT17199 Ciss, Coss, Crss -- VDS 3 VDD= --30V VGS= --10V f=1MHz 2 Ciss 2 td(off) 10000 1000 7 tf 5 3 2 tr 100 7 5 3 2 Coss Crss 1000 td(on) 7 7 5 --0.1 --0.6 Diode Forward Voltage, VSD -- V IT14177 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --1.8 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 0 20 3 25° --20 Drain to Source Voltage, VDS -- V 5 --60 --40 VGS= --3V --20 0 --80 5°C --60 --100 °C --80 --120 Tc= 7 --100 --160 --25 V --120 --40 Tc= -25 --140 Drain Current, ID -- A --160 VDS= --10V --180 --4V --1 0V Drain Current, ID -- A --140 --6 --8 V --180 ID -- VGS --200 Tc=25°C 75°C ID -- VDS --200 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14179 5 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT14180 No. A1357-2/6 BBS3002 VGS -- Qg --10 VDS= --30V ID= --100A --9 --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --1000 7 5 3 2 --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Tc 300 70 60 50 40 30 20 10 20 40 60 80 100 10 120 Case Temperature, Tc -- °C 140 160 IT14183 1m s 10 10 μs 0μ s m DC Operation in this area is limited by RDS(on). --10 7 5 3 2 --1.0 7 5 3 2 s 10 0m s op er ati on Tc=25°C 2 3 5 7 --10 2 3 5 7 --100 IT14182 Drain to Source Voltage, VDS -- V EAS -- Ta 120 80 0 PW≤10μs ID= --100A IT14181 90 0 IDP= --400A --0.1 Single pulse 2 3 5 7 --1.0 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 100 --100 7 5 3 2 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14184 No. A1357-3/6 BBS3002 Package Dimensions BBS3002-DL-1E D2PAK/TO-263-2L CASE 418AP ISSUE O Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: DL Electrical Connection 2, 4 DL 1 3 No. A1357-4/6 BBS3002 Package Dimensions BBS3002-TL-1E Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: TL Electrical Connection 2, 4 TL 1 3 No. A1357-5/6 BBS3002 Ordering & Package Information Device Package BBS3002-DL-1E TO-263-2L SC-83, TO-263 BBS3002-TL-1E TO-263 Marking Shipping memo 800 pcs./reel Pb-Free BS3002 LOT No. Fig.1 Unclamped Inductive Switching Test Circuit D Fig.2 Switching Time Test Circuit L 0V --10V ≥50Ω RG BBS3002 50Ω ID= --50A RL=0.6Ω VIN G 0V --10V VDD= --30V VIN S VDD D PW=10μs D.C.≤1% VOUT G P.G BBS3002 50Ω S Note on usage : Since the BBS3002 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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