Ordering number : ENA2167 ATP401 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 3.7mΩ, ATPAK Features • • ON-resistance RDS(on)1=2.8mΩ(typ) 4.5V Drive Input Capasitance Ciss=17000pF(typ) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 100 A 400 A 90 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 549 mJ 70 A Avalanche Current *2 Tc=25°C V ±20 *1 VDD=36V, L=100μH, IAV=70A(Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP401-TL-H 1.5 6.5 Packing Type: TL 0.4 0.4 0.5 4 4.6 2.6 Marking ATP401 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 12313 TKIM TC-00002868 No. A2167-1/7 ATP401 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 60 V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=50A 90 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=50A, VGS=10V ID=50A, VGS=4.5V 2.8 3.7 mΩ 3.7 5.2 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance ID=1mA, VGS=0V VDS=60V, VGS=0V V Drain-to-Source Breakdown Voltage 10 μA ±10 μA 1.2 2.6 V S 17000 pF 1000 pF Crss 770 pF Turn-ON Delay Time td(on) 110 ns Rise Time tr 580 ns Turn-OFF Delay Time td(off) 840 ns Fall Time tf 710 ns Total Gate Charge Qg 300 nC Gate-to-Source Charge Qgs 60 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=36V, VGS=10V, ID=100A 60 IS=100A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit D ≥50Ω L 50Ω 10V 0V VIN G V VDD=36V ID=50A RL=0.72Ω VIN S 1.2 Fig.2 Switching Time Test Circuit D 10V 0V nC 0.9 VOUT PW≤10μs D.C.≤1% VDD G ATP401 P.G 50Ω S ATP401 Ordering Information Device ATP401-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A2167-2/7 ATP401 ID -- VDS 200 Tc=25°C 8V 80 VGS=3V 60 20 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 6 75°C 4 25°C Tc= --25°C ID=50A Single pulse 0 3 5 6 7 8 9 °C 25 5 3 C 5° --2 = °C Tc 75 2 10 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT17006 Drain Current, ID -- A Ciss, Coss, Crss -- VDS 5 6 A =50 , ID 4.5V = A VGS =50 , ID 10V = VGS 4 2 Gate-to-Source Voltage, VGS -- V 10K 7 5 3 2 Coss 1K Crss 7 5 25 50 75 100 125 150 IT17005 VGS=0V Single pulse 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT17007 Qg -- VGS VDS=36V ID=100A 9 Ciss 0 IS -- VSD 10 f=1MHz 2 --25 Forward Drain to Source Voltage, VSD -- V 3 100 5 IT17003 Case Temperature, Tc -- °C Forward Drain Current, IS -- A 7 3 3 8 5 3 2 100 2 2 RDS(on) -- Tc 0 --50 10 VDS=10V 0 4 Gate-to-Source Voltage, VGS -- V IT17004 | yfs | -- ID 3 1.0 °C Single pulse 4 Gate-to-Source Voltage, VGS -- V 2 1 10 8 0 0 IT17002 RDS(on) -- VGS 2 0 2.0 25 Tc= 75°C 25°C --25°C 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 40 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 80 40 0 Ciss, Coss, Crss -- pF 100 Tc =-25 °C 100 120 C 120 140 75 ° 4V 140 Drain Current, ID -- A 160 10V Drain Current, ID -- A 160 VDS=10V 180 6V 180 ID -- VGS(off) 200 8 7 6 5 4 3 2 1 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT17008 0 0 50 100 150 200 Total Gate Charge, Qg -- nC 250 300 IT17009 No. A2167-3/7 ATP401 S/W Time -- ID 5 VDD=36V VGS=10V 3 2 Drain Current, ID -- A Switching Time, SW Time -- ns 1000 7 5 3 2 td(off) 1000 7 5 tf 3 2 tr td(on) 100 7 10 0.1 2 3 5 7 2 1 3 5 7 10 2 Drain Current, ID -- A PD -- Tc 5 7 100 IT17010 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT17012 10 10 ID=100A 100 7 5 3 2 D C 10 7 5 3 2 1.0 7 5 3 2 op m 0m er Operation in this area is limited by RDS(on). s 10 10 μs 0μ s 1m s s at io n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT17011 EAS -- Ta 120 90 0 IDP=400A(PW≤10μs) 0.1 0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 100 3 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT17013 No. A2167-4/7 ATP401 Taping Specification ATP401-TL-H No. A2167-5/7 ATP401 Outline Drawing ATP401-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A2167-6/7 ATP401 Note on usage : Since the ATP401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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