Ordering number : ENA1526A ATP213 N-Channel Power MOSFET http://onsemi.com 60V, 50A, 16mΩ, Single ATPAK Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 50 A 150 A 50 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 37 mJ 25 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP213-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP213 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62012 TKIM/80509PA TK IM TC-00002021 No. A1526-1/7 ATP213 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V 55 RDS(on)1 RDS(on)2 VDS=10V, ID=25A ID=25A, VGS=10V 12 16 mΩ ID=13A, VGS=4.5V 15 21 mΩ RDS(on)3 ID=7A, VGS=4V 17 26 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD S 3150 VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=50A pF 310 pF 190 pF 23 ns 170 ns 230 ns 150 ns 58 nC 10.5 nC 12.5 IS=50A, VGS=0V 1.01 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=25A RL=1.2Ω VIN D PW=10μs D.C.≤1% VOUT G ATP213 P.G 50Ω S Ordering Information Device ATP213-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1526-2/7 ATP213 ID -- VDS VGS=3.0V 20 15 0.6 0.8 1.0 1.2 1.4 1.6 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.8 RDS(on) -- VGS 2.0 Tc=25°C Single pulse 35 ID=7A 13A 30 25A 25 20 15 10 1 2 3 4 5 6 7 8 9 Tc= --25 °C 75° C 25° C 20 = Tc 10 7 °C 75 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT14841 VDD=30V VGS=10V °C 25 25 7A I D= 0V, . 4 = A =13 VGS , ID V 5 . =4 25A I D= VGS , V 0 . =10 VGS 20 15 10 5 --25 0 25 50 75 100 125 IS -- VSD 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- pF tf 100 7 5 tr 3 td(on) 1.4 IT14842 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 150 IT14840 VGS=0V Single pulse 7 td(off) 5.0 IT14838 5 3 4.5 Diode Forward Voltage, VSD -- V SW Time -- ID 7 4.0 30 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.5 Case Temperature, Tc -- °C Source Current, IS -- A C 5° 3.0 Single pulse 100 7 5 3 2 --2 2.5 RDS(on) -- Tc 0 --50 °C 25 2 2.0 1.5 35 VDS=10V Single pulse 3 1.0 IT14839 | yfs | -- ID 100 0.5 0 Gate-to-Source Voltage, VGS -- V 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 25 IT14837 5 Switching Time, SW Time -- ns 30 Tc= 75° C 25°C --25° C 0.4 40 5 35 5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 Drain-to-Source Voltage, VDS -- V 5 40 10 5 7 45 15 10 0 50 Tc= 75°C C 25 55 --25 ° 30 60 V 35 65 3.5V 6.0 Drain Current, ID -- A 40 VDS=10V Single pulse 70 4.5 V 16.0 10.0V V 8.0V 45 ID -- VGS 75 4. 0V Tc=25°C Single pulse Drain Current, ID -- A 50 2 1000 7 5 Coss 3 2 Crss 2 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14843 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14844 No. A1526-3/7 ATP213 VGS -- Qg 10 7 6 5 4 20 30 40 50 PD -- Tc 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14847 3 5 7 10 2 3 5 7 100 IT14846 EAS -- Ta 120 50 2 Drain-to-Source Voltage, VDS -- V IT14845 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 60 Tc=25°C 0.1 Single pulse 2 3 5 7 1.0 0.1 60 μs on ati er 3 2 Total Gate Charge, Qg -- nC Operation in this area is limited by RDS(on). 3 2 1 10 10 ms 0m s 10 7 5 1.0 7 5 0μ s 10 3 2 2 0 ID=50A 10 10 op 3 PW≤10μs DC Drain Current, ID -- A 8 0 IDP=150A 100 7 5 s 1m Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=50A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1526-4/7 ATP213 Taping Specification ATP213-TL-H No. A1526-5/7 ATP213 Outline Drawing ATP213-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1526-6/7 ATP213 Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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