2SK4126 Ordering number : ENA0748A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings Unit VDSS VGSS 650 ±30 V ID 15 A IDP PW≤10µs, duty cycle≤1% V 48 A 2.5 W Allowable Power Dissipation PD 170 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *2 EAS 132 mJ Avalanche Current *3 IAV 15 A Tc=25°C (SANYO’s ideal heat dissipation condition)*1 *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=15A *3 L≤1mH, single pulse Marking : K4126 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507 TI IM TC-00001054 / 61307QB TI IM TC-00000730 No. A0748-1/5 2SK4126 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Ratings Conditions min ID=10mA, VGS=0V VDS=520V, VGS=0V VGS(off) ⏐yfs⏐ VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7.5A RDS(on) Ciss ID=6A, VGS=10V VDS=30V, f=1MHz Coss VDS=30V, f=1MHz VDS=30V, f=1MHz typ Unit max 650 V 100 µA ±100 nA 5 V 0.72 Ω 3 4.1 8.2 S 0.55 1200 pF 208 pF Reverse Transfer Capacitance Crss 44 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 27 ns See specified Test Circuit. 80 ns td(off) tf See specified Test Circuit. 45 ns Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 50 ns VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A 45.4 nC 8.3 nC VDS=200V, VGS=10V, ID=15A IS=15A, VGS=0V 25.8 nC 0.95 1.3 V Package Dimensions unit : mm (typ) 7503-004 4.8 15.6 14.0 3.2 20.0 1.3 15.0 1.2 2.6 3.5 2.0 1.6 20.0 2.0 1.0 1 0.6 2 3 1 : Gate 2 : Drain 3 : Source 1.4 0.6 5.45 SANYO : TO-3PB 5.45 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V 10V 0V L ID=7.5A RL=26.7Ω VIN D ≥50Ω RG VOUT PW=10µs D.C.≤0.5% 2SK4126 10V 0V G 50Ω VDD 2SK4126 P.G RGS=50Ω S No. A0748-2/5 2SK4126 ID -- VDS 35 ID -- VGS 35 VDS=20V Tc=25°C Drain Current, ID -- A 15V Drain Current, ID -- A 10V 30 8V 25 20 15 10 30 Tc= --25°C 25 25°C 20 75°C 15 10 6V 5 5 VGS=5V 0 0 0 5 10 15 20 25 0 30 Drain-to-Source Voltage, VDS -- V 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 2.0 2 IT11773 20 IT11774 RDS(on) -- Tc 1.6 ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 Tc=75°C 0.8 25°C 0.4 --25°C 0.2 5 7 9 11 13 Gate-to-Source Voltage, VGS -- V = Tc --2 75 0.4 0.2 °C 2 1.0 7 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 75 100 125 150 IT11776 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11778 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 5 50 10 7 5 IT11777 7 25 VGS=0V 0.01 0.2 3 SW Time -- ID 1000 0 IS -- VSD 3 2 5 2 --25 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 5°C 3 0.6 3 2 °C 25 5 0V =1 S G ,V A =6 ID 5 10 7 0.8 IT11775 VDS=10V 2 3 0.1 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 15 ⏐yfs⏐ -- ID 3 1.0 0 --50 0 3 1.2 --25°C 0.6 1.4 Tc=7 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT11779 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT11780 No. A0748-3/5 2SK4126 VGS -- Qg 10 Drain Current, ID -- A 5 4 3 2 10 7 5 3 2 s Gate-to-Source Voltage, VGS -- V 0µ 10 6 s 1m s n m s io 10 0m erat 10 op DC ID=15A 2 7 Operation in this area is limited by RDS(on). 1.0 7 5 3 1 2 0 0.1 0.1 10 20 30 40 50 Total Gate Charge, Qg -- nC Tc=25°C Single pulse 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 5 7 10 2 3 5 7 100 2 3 5 71000 IT12250 PD -- Tc 200 2.5 2 3 Drain-to-Source Voltage, VDS -- V IT12530 PD -- Ta 3.0 Allowable Power Dissipation, PD -- W PW≤10µs 3 8 0 180 170 160 140 120 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12251 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12252 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=48A µs 10 9 ASO 100 7 5 VDS=200V ID=15A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0748-4/5 2SK4126 Note on usage : Since the 2SK4126 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice. PS No. A0748-5/5