SANYO 2SK4126_0712

2SK4126
Ordering number : ENA0748A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4126
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
650
±30
V
ID
15
A
IDP
PW≤10µs, duty cycle≤1%
V
48
A
2.5
W
Allowable Power Dissipation
PD
170
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *2
EAS
132
mJ
Avalanche Current *3
IAV
15
A
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
*1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=99V, L=1mH, IAV=15A
*3 L≤1mH, single pulse
Marking : K4126
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507 TI IM TC-00001054 / 61307QB TI IM TC-00000730 No. A0748-1/5
2SK4126
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Ratings
Conditions
min
ID=10mA, VGS=0V
VDS=520V, VGS=0V
VGS(off)
⏐yfs⏐
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7.5A
RDS(on)
Ciss
ID=6A, VGS=10V
VDS=30V, f=1MHz
Coss
VDS=30V, f=1MHz
VDS=30V, f=1MHz
typ
Unit
max
650
V
100
µA
±100
nA
5
V
0.72
Ω
3
4.1
8.2
S
0.55
1200
pF
208
pF
Reverse Transfer Capacitance
Crss
44
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
27
ns
See specified Test Circuit.
80
ns
td(off)
tf
See specified Test Circuit.
45
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
50
ns
VDS=200V, VGS=10V, ID=15A
VDS=200V, VGS=10V, ID=15A
45.4
nC
8.3
nC
VDS=200V, VGS=10V, ID=15A
IS=15A, VGS=0V
25.8
nC
0.95
1.3
V
Package Dimensions
unit : mm (typ)
7503-004
4.8
15.6
14.0
3.2
20.0
1.3
15.0
1.2
2.6
3.5
2.0
1.6
20.0
2.0
1.0
1
0.6
2 3
1 : Gate
2 : Drain
3 : Source
1.4
0.6
5.45
SANYO : TO-3PB
5.45
Switching Time Test Circuit
VIN
Avalanche Resistance Test Circuit
VDD=200V
10V
0V
L
ID=7.5A
RL=26.7Ω
VIN
D
≥50Ω
RG
VOUT
PW=10µs
D.C.≤0.5%
2SK4126
10V
0V
G
50Ω
VDD
2SK4126
P.G
RGS=50Ω
S
No. A0748-2/5
2SK4126
ID -- VDS
35
ID -- VGS
35
VDS=20V
Tc=25°C
Drain Current, ID -- A
15V
Drain Current, ID -- A
10V
30
8V
25
20
15
10
30
Tc= --25°C
25
25°C
20
75°C
15
10
6V
5
5
VGS=5V
0
0
0
5
10
15
20
25
0
30
Drain-to-Source Voltage, VDS -- V
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
2.0
2
IT11773
20
IT11774
RDS(on) -- Tc
1.6
ID=6A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.6
1.4
1.2
1.0
Tc=75°C
0.8
25°C
0.4
--25°C
0.2
5
7
9
11
13
Gate-to-Source Voltage, VGS -- V
=
Tc
--2
75
0.4
0.2
°C
2
1.0
7
3
5
7 1.0
2
3
5
7
2
10
Drain Current, ID -- A
75
100
125
150
IT11776
3
2
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT11778
Ciss, Coss, Crss -- VDS
10000
7
5
VDD=200V
VGS=10V
5
50
10
7
5
IT11777
7
25
VGS=0V
0.01
0.2
3
SW Time -- ID
1000
0
IS -- VSD
3
2
5
2
--25
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
5°C
3
0.6
3
2
°C
25
5
0V
=1
S
G
,V
A
=6
ID
5
10
7
0.8
IT11775
VDS=10V
2
3
0.1
f=1MHz
3
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
15
⏐yfs⏐ -- ID
3
1.0
0
--50
0
3
1.2
--25°C
0.6
1.4
Tc=7
5°C
25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.8
td (off)
2
100
7
tf
tr
5
td(on)
3
2
Ciss
1000
7
5
Coss
3
2
100
7
5
Crss
3
2
2
10
0.1
10
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
IT11779
0
10
20
30
40
Drain-to-Source Voltage, VDS -- V
50
IT11780
No. A0748-3/5
2SK4126
VGS -- Qg
10
Drain Current, ID -- A
5
4
3
2
10
7
5
3
2
s
Gate-to-Source Voltage, VGS -- V
0µ
10
6
s
1m
s
n
m s
io
10 0m erat
10 op
DC
ID=15A
2
7
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
1
2
0
0.1
0.1
10
20
30
40
50
Total Gate Charge, Qg -- nC
Tc=25°C
Single pulse
2 3
5 7 1.0
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
5 7 10
2 3
5 7 100
2 3
5 71000
IT12250
PD -- Tc
200
2.5
2 3
Drain-to-Source Voltage, VDS -- V
IT12530
PD -- Ta
3.0
Allowable Power Dissipation, PD -- W
PW≤10µs
3
8
0
180
170
160
140
120
100
80
60
40
20
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12251
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12252
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=48A
µs
10
9
ASO
100
7
5
VDS=200V
ID=15A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0748-4/5
2SK4126
Note on usage : Since the 2SK4126 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0748-5/5