2SK4182 Ordering number : ENA1020 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4182 General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. For use of lighting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 525 V ±30 V 9.0 A Drain Current (Pulse) ID IDP PW≤10μs, duty cycle≤1% 36 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition*1) 80 W °C Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single pulse) *2 EAS 49 mJ Avalanche Current *3 IAV 9 A *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=9A *3 L≤1mH, single pulse Marking: K4182 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10908QB TI IM TC-00001085 No. A1020-1/4 2SK4182 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Ratings Conditions min ID=10mA, VGS=0V VDS=420V, VGS=0V typ Unit max 525 V 100 μA ±100 nA 5 V 0.75 Ω VGS(off) ⏐yfs⏐ VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A RDS(on) Ciss ID=4.5A, VGS=10V VDS=30V, f=1MHz 0.58 750 pF Output Capacitance Coss 148 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz VDS=30V, f=1MHz 34 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 22 ns See specified Test Circuit. 76 ns td(off) tf See specified Test Circuit. 88 ns Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 3 2.4 See specified Test Circuit. 4.8 S 40 ns VDS=200V, VGS=10V, ID=9A VDS=200V, VGS=10V, ID=9A 29.7 nC 6.7 nC VDS=200V, VGS=10V, ID=9A IS=9A, VGS=0V 16.8 nC 0.9 1.2 V Package Dimensions unit : mm (typ) 7002-001 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54 5.08 1 : Gate 2 : Source 3 : Drain 6.2 5.2 7.8 2.5 10.0 6.0 SANYO : ZP Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V L 10V 0V ≥50Ω RG ID=4.5A RL=44Ω VIN D VOUT PW=10μs D.C.≤0.5% 2SK4182 10V 0V G 50Ω VDD 2SK4182 P.G RGS=50Ω S No. A1020-2/4 2SK4182 ID -- VDS 30 ID -- VGS 25 Tc=25°C 15V 10V 8V 20 Tc= --25°C 20 Drain Current, ID -- A Drain Current, ID -- A 25 VDS=20V 15 10 6V 25°C 75°C 15 10 5 5 VGS=5V 0 0 5 0 10 15 20 25 Drain-to-Source Voltage, VDS -- V 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 1.6 1.4 1.2 Tc=75°C 1.0 0.8 25°C 0.6 --25°C 0.4 7 8 9 10 11 12 IT13172 RDS(on) -- Tc 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 1.2 .5A =4 , ID V 0 1.0 =1 S VG 0.8 0.6 0.4 0.2 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C IT13173 ⏐yfs⏐ -- ID 2 1.4 0 --50 0 150 IT13174 IS -- VSD 3 2 VDS=20V VGS=0V 10 7 5 3 = Tc 2 5°C --2 °C 75 1.0 3 2 1.0 7 5 3 2 5 0.1 7 5 3 3 2 7 2 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 0.01 2.00E-01 3 6.00E-01 8.00E-01 1.00E+00 1.20E+00 1.40E+00 Diode Forward Voltage, VSD -- V IT13175 SW Time -- ID 1000 4.00E-01 --25°C C 25° 5 25°C 7 Tc=7 5°C 10 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 6 1.6 0.2 IT13176 Ciss, Coss, Crss -- VDS 5 VDD=200V VGS=10V f=1MHz 3 2 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 Gate-to-Source Voltage, VGS -- V 1.8 2.0 5 4 ID=4.5A 2.2 7 3 IT13171 RDS(on) -- VGS 2.4 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 30 2 td (off) 100 7 tr 5 3 tf td(on) Ciss 1000 7 5 3 Coss 2 100 7 5 Crss 3 2 2 10 0.1 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT13177 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT13178 No. A1020-3/4 2SK4182 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 10 0 20 PW≤10μs 10 7 5 3 2 μs 10 0 μs 10 ms 0m DC s op era tio n s 10 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 60 50 40 30 20 10 5 7 10 2 3 5 7 100 2 3 5 7 IT13180 EAS -- Ta 120 70 2 3 Drain-to-Source Voltage, VDS -- V PD -- Tc 80 10 1m ID=9A IT13179 Avalanche Energy Derating Factor -- % Allowable Power Dissipation, PD -- W IDP=36A 0.01 0.1 30 Total Gate Charge, Qg -- nC 90 ASO 7 5 3 2 VDS=200V ID=9A 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT13181 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT10478 Note on usage : Since the 2SK4182 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2008. Specifications and information herein are subject to change without notice. PS No. A1020-4/4