SANYO 2SK2628ALS

2SK2628ALS
Ordering number : ENA0363A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2628ALS
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Low Qg.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
7
A
IDc*1
IDpack*2
Drain Current (DC)
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Limited only by maximum temperature
SANYO’s ideal heat dissipation condition
6.2
A
PW≤10µs, duty cycle≤1%
24
A
2.0
W
Tc=25°C (SANYO’s ideal heat dissipation condition)
35
W
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *3
EAS
98
mJ
Avalanche Current *4
IAV
6
A
*1 Shows chip capability
*2 Package limited
*3 VDD=50V, L=5mH, IAV=6A
*4 L≤5mH, single pulse
Marking : K2628
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21407 TI IM TC-00000531 / 72006QB MS IM TC-00000025 No. A0363-1/5
2SK2628ALS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Ratings
Conditions
min
typ
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=600V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
3.5
yfs
RDS(on)
VDS=10V, ID=4A
2.0
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Unit
max
600
V
mA
nA
1.0
±100
5.5
V
4.0
S
1050
pF
Coss
ID=2A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
320
pF
Crss
VDS=20V, f=1MHz
180
pF
VDS=200V, VGS=10V, ID=6A
30
nC
ns
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qg
0.9
1.1
Ω
Turn-ON Delay Time
td(on)
See specified Test Circuit.
23
Rise Time
tr
td(off)
See specified Test Circuit.
35
ns
See specified Test Circuit.
90
ns
tf
VSD
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
35
IS=6A, VGS=0V
Package Dimensions
ns
0.85
1.2
V
Switching Time Test Circuit
unit : mm (typ)
7509-002
PW=1µs
D.C.≤0.5%
VDD=200V
4.5
10.0
3.2
ID=4A
RL=50Ω
2.8
7.2
3.5
VGS=15V
VOUT
0.6
16.1
16.0
D
0.75
2.4
1 2 3
2.55
S
1.2
14.0
3.6
0.9
1.2
G
2.55
P.G
0.7
RGS=50Ω
2SK2628ALS
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SK2628ALS
15V
0V
50Ω
VDD
No. A0363-2/5
2SK2628ALS
ID -- VDS
10
7
25°C
6
5
4
7V
3
2
75°C
6
4
2
0
0
4
6
8
10
Drain-to-Source Voltage, VDS -- V
12
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.3
ID=6A
1.2
1.1
2A
1.0
0.9
0.8
0
2
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
2
5°C
--2
°C
75
25
1.0
°C
7
5
3
0.1
0.1
2
3
5
7 1.0
2
3
5
7
1.5
1.0
--25
0
0.1
7
5
3
2
0
Coss
3
Crss
2
100
125
150
IT03677
0.3
0.6
0.9
1.2
Diode Forward Voltage, VSD -- V
Gate-to-Source Voltage, VGS -- V
7
100
1.0
7
5
3
2
1.5
IT03679
VGS -- Qg
VDS=200V
ID=6A
2
Ciss
75
VGS=0V
10
1000
50
10
7
5
3
2
f=1MHz
5
25
IS -- VSD
IT03678
Ciss, Coss, Crss -- VDS
3
20
IT03675
0.5
2
10
Drain Current, ID -- A
18
0V
=1
S
G
5V
V
=1
A,
S
=2
G
V
ID
A,
=2
ID
0.01
7
5
3
2
0.001
2
16
14
2.0
3
2
Source Current, IS -- A
=
Tc
12
Case Temperature, Tc -- °C
5
3
10
2.5
IT03676
VDS=10V
7
8
RDS(on) -- Tc
0
--50
20
yfs -- ID
10
6
3.0
Tc=25°C
4A
4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
1.4
2
0
IT03674
Tc=
75°C
25°C
--25°
C
2
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
8
VGS=6V
1
Ciss, Coss, Crss -- pF
Tc= --25°C
10
Drain Current, ID -- A
8
Drain Current, ID -- A
VDS=10V
15V
V
10
V
8
9
Forward Transfer Admittance, yfs -- S
ID -- VGS
12
8
6
4
2
7
0
5
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT03680
0
5
10
15
20
Total Gate Charge, Qg -- nC
25
30
IT03681
No. A0363-3/5
2SK2628ALS
SW Time -- ID
1000
5
3
2
td(off)
100
7
tf
5
tr
3
2
td(on)
10
0.1
2
3
5
7 1.0
2
3
5
7
2
10
Operation in this area
is limited by RDS(on).
3
2
0.1
7
5
Tc=25°C
Single pulse
3
2
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
5 7 10
1.5
1.0
0.5
0
3
5 7 100
2
3
5 7 1000
IT10852
PD -- Tc
40
2.0
2
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
7
5
IT03682
PD -- Ta
2.5
1m
s
10
m
10
s
DC 0m
op s
era
tio
n
IDpack(*2)=6.2A
3
2
0.01
1.0
3
PW≤10µs
10
µs
10
0µ
s
IDc(*1)=7A
10
7
5
3
2
Drain Current, ID -- A
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT03684
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT03685
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=24A
3
2
Drain Current, ID -- A
Switching Time, SW Time -- ns
7
ASO
5
VDD=200V
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0363-4/5
2SK2628ALS
Note on usage : Since the 2SK2628ALS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0363-5/5