BFL4001 Ordering number : ENA1638 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 Gate-to-Source Voltage VGSS ±30 V Limited only by maximum temperature Tch=150°C 6.5 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.1 A IDP PW≤10μs, duty cycle≤1% 13 A 2.0 W Drain Current (DC) Drain Current (Pulse) IDc*1 V Allowable Power Dissipation PD 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 237 mJ 6.5 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition*)3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Marking : FL4001 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010QB TK IM TC-00002256 No. A1638-1/5 BFL4001 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=720V, VGS=0V Ratings min typ Unit max 900 V 1.0 mA ±100 nA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=3.25A Static Drain-to-Source On-State Resistance RDS(on) ID=3.25A, VGS=10V Input Capacitance Ciss VDS=30V, f=1MHz 850 pF Output Capacitance Coss VDS=30V, f=1MHz 130 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 43 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr See specified Test Circuit. 49 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 156 ns Fall Time tf See specified Test Circuit. 52 ns VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A 44 nC 7.0 nC 22 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 2.0 1.8 4.0 3.6 2.1 VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V V S 2.7 0.85 1.2 Ω V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V PW=10μs D.C.≤0.5% L ID=3.25A RL=61.5Ω VGS=10V D ≥50Ω RG VOUT 10V 0V G BFL4001 50Ω VDD BFL4001 P.G RGS=50Ω S No. A1638-2/5 BFL4001 ID -- VDS 14 ID -- VGS 14 Tc=25°C 12 VDS=20V 12 10 20V Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 10V 7V 8 6 6V 4 5V 2 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 25°C 6 75°C 4 0 40 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V IT15294 RDS(on) -- VGS 6 8 2 VGS=4V 0 10 RDS(on) -- Tc 7 9 10 IT15295 Tc=75°C 3 25°C 2 --25°C 1 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V °C 25 2 1.0 = Tc 7 C 5° --2 °C 75 5 3 2 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 25 50 75 100 125 150 IT15297 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 SW Time -- ID 0.01 0.2 5 7 10 IT15298 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 5 VDD=200V VGS=10V 1.2 IT15299 f=1MHz 3 2 3 td (off) 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 0 3 2 Drain Current, ID -- A 7 --25 3 2 VDS=20V 3 1 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 = V GS 2 0 --50 15 A .25 =3 , ID V 10 3 IT15296 | yfs | -- ID 7 14 4 Tc= 75°C 0 5 --25° C 4 6 25°C 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=3.25A 100 7 5 tf 3 tr td(on) 2 Ciss 1000 7 5 3 2 Coss 100 7 5 Crs s 3 2 10 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT15300 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15301 No. A1638-3/5 BFL4001 VGS -- Qg 10 Drain Current, ID -- A 2 1 3 2 0 5 10 15 20 25 30 35 40 45 Total Gate Charge, Qg -- nC 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15304 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 20 2 3 PD -- Tc 40 1.5 0 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25°C Single pulse 0.01 0.1 50 2.0 0 Operation in this area is limited by RDS(on). IT15302 PD -- Ta 2.5 Avalanche Energy derating factor -- % 3 2 0.1 7 5 s 0μ 3 1.0 7 5 on ati er 4 s op 5 1m IDpack(*2)=4.1A DC 6 3 2 μs s m s 10 0m 7 10 IDc(*1)=6.5A 10 8 0 IDP=13A (PW≤10μs) 10 7 5 10 Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=6.5A 5 71000 2 IT15303 37 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15305 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1638-4/5 BFL4001 Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No. A1638-5/5