2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 1.5 2.5 4.0 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ≤ -370mV, at IC = -1.5A, IB = -75mA) 0.5 4.5 1.6 (1) (3) 1.0 (2) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector zStructure PNP epitaxial planar silicon transistor Abbreviated symbol : XY (3)Emitter zAbsolute maximum ratings (Ta=25°C) zPackaging specifications Symbol Limits Unit Package MPT3 Collector-base voltage VCBO −30 V Packaging type Taping Collector-emitter voltage VCEO −30 V Code T100 Emitter-base voltage VEBO −6 V Part No. Basic ordering unit (pieces) 1000 DC IC −2 Pulse ICP −4 ∗1 A 2SB1714 0.5 ∗2 2 ∗3 Parameter Collector current Power dissipation PC W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw=1ms, Pulsed. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40×40×0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO −30 − − Collector-base breakdown voltage BVCBO −30 − − Emitter-base breakdown voltage BVEBO −6 − − Collector cut-off current ICBO − − −100 Emitter cut-off current IEBO − − −100 Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance VCE(sat) ∗ − −180 −370 hFE 270 − 680 fT − 280 − Cob − 20 − Conditions IC= −1mA V IC= −10µA IE= −10µA nA VCB= −30V mV IC/IB= −1.5A/ −75A − VEB= −6V VCE= −2V, IC= −200mA MHz VCE= −2V, IE=200mA , f=100MHz pF VCB= −10V , IE=0mA , f=1MHz ∗ Pulsed 1/2 2SB1714 Transistors VCE= −2V Pulsed Ta=25 C Ta=−40 C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 1 0.1 Ta=−40 C Ta=25 C Ta=100 C 0.01 0.001 0.01 0.1 1 1000 TRANSITION FREQUENCY : fT (MHz) VBE=2V Pulsed Ta=100 C Ta=25 C 1 Ta=−40 C 0.1 0.1 1 10 10 Fig.4 Grounded emitter propagation characteristics IC/IB=50/1 1 /1 0 IC/IB=2 0.1 0.001 IC/IB=10/1 0.01 0.1 1 10 Fig.3 Base-emitter saturation voltage vs. collectir current 10000 Ta=25 C VCE= −2V f=100MHz 100 Ta=25 C VCE= −12V IC/IB=20/1 Pulsed 1000 tstg 100 tf tdon 10 tr 10 0.01 10 BASE TO EMITTER CURRENT : VBE (V) Ta=25 C Pulsed COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 10 COLLECTOR CURRENT :IC (A) IC/IB=20/1 Pulsed COLLECTOR CURRENT : IC (A) Fig.1 DV current gain vs. collector current 0.01 10 SWITCHINGTIME : (ns) DC CURRENT GAIN : hFE Ta=100 C BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristics curves 0.1 1 10 1 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.5 Gain bandwidth product vs. emitter curent Fig.6 Switching time 10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 IC=0A f=1MHz Ta=25 C Cib 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1