RB521S-40 Diodes Schottky barrier diode RB521S-40 zApplications Rectifying small power zLand size figure (Unit : mm) zExternal dimensions (Unit : mm) 0.12±0.05 0.8 1.2±0.05 zFeatures 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability 1.6±0.1 1.7 0.6 0.8±0.05 EMD2 zConstruction Silicon epitaxial planar 0.3±0.05 zStructure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) zTaping dimensions (Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 Empty pocket 4.0±0.1 空ポケット 2.0±0.05 1.26±0.05 0 3.5±0.05 0.6 2.45±0.1 1.3±0.06 0 φ0.5 0.95±0.06 0 8.0±0.15 1.75±0.1 4.0±0.1 0.2 0.76±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 45 40 200 4 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR ESD break down voltage ESD Min. 0.16 0.31 0.41 - Typ. 0.26 0.40 0.50 2.50 6.00 Max. 0.30 0.45 0.54 20.00 90.00 Unit 10 - - KV V µA Conditions IF=10mA IF=100mA IF=200mA VR=10V VR=40V C=100PF,R=1.5KΩ forward and reverse : 1 time 1/3 RB521S-40 Diodes zElectrical characteristic curves Ta=150℃ Ta=-25℃ 10 Ta=25℃ Ta=125℃ 1000 Ta=75℃ 100 10 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 510 500 490 AVE:495.2mV 480 80 70 60 50 40 30 AVE:6.86uA 20 Ta=25℃ f=1MHz VR=0V n=10pcs 29 10 28 27 26 AVE:27.2pF 25 24 23 22 21 470 20 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 10 Ifsm 15 8.3ms 10 5 AVE:5.60A 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1 10 Ifsm t 5 0 100 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.3 5 Rth(j-a) D=1/2 FORWARD POWER DISSIPATION:Pf(W) 0.25 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA time 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 0.2 DC Sin(θ＝180) 0.15 0.1 1000 3 D=1/2 2 Sin(θ＝180) DC 1 0.05 300us 10 0.001 4 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 30 Ta=25℃ VR=40V n=30pcs 90 REVERSE CURRENT:VR(uA) Ta=25℃ IF=200mA n=30pcs 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 520 FORWARD VOLTAGE:VF(mV) f=1MHz 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) Ta=75℃ 100 REVERSE CURRENT:IR(uA) 100000 1000 0 0 0 0.1 0.2 0.3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.4 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 40 2/3 RB521S-40 Diodes 0A 0V 0.4 DC t T 0.3 Sin(θ＝180) 0.2 0.5 Io VR D=t/T VR=20V Tj=150℃ 0.1 D=1/2 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 0A 0V 0.4 Io t DC T VR D=t/T VR=20V Tj=150℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1