RB451F Diodes Shottky barrier diode RB451F zApplication Low current rectification zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) 1.3 2.0±0.2 0.15±0.05 0.65 0.9MIN. 各リードとも Each lead has same dimensions 同寸法 2.1±0.1 1.25±0.1 (3) 0.8MIN 0～0.1 z Construction Silicon epitaxial planer UMD3 0.1Min (2) (1) （0.65） （0.65） 1.6 0.3±0.1 zFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. zStructure 0.7±0.1 1.3±0.1 0.9±0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) zTaping dimensions (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 2.25±0.1 0 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak（60Hz・1cyc） Junction temperature Storage temperatue zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals φ0.5±0.05 4.0±0.1 Limits 40 40 100 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg 2.4±0.1 8.0±0.2 5.5±0.2 0～0.1 2.4±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit V V mA A ℃ ℃ Symbol VF1 VF2 IR Min. - Typ. - Max. 0.55 0.34 30 Unit V V µA Ct - 6.0 - pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz Rev.B 1/3 RB451F Diodes zElectrical characteristic curves (Ta=25°C) 10000 REVERSE CURRENT:IR(uA) Ta=25℃ 1 Ta=-25℃ 0.1 f=1MHz 1000 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 450 440 430 0 35 30 Ta=25℃ IF=10mA n=30pcs 300 290 280 270 VF DISPERSION MAP 20 15 10 5 10 8 6 4 AVE:5.81pF 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 12 2 IR DISPERSION MAP 20 Ta=25℃ f=1MHz VR=10V n=10pcs 14 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 15 10 5 AVE:6.20nS 0 trr DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 1000 Ifsm t 10 5 0 0.1 20 IFSM DISRESION MAP 15 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 0 10 AVE:0.928uA 0 VF DISPERSION MAP 20 16 Ta=25℃ VR=10V n=10pcs 25 260 18 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:281.5mV 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE CURRENT:IR(uA) 460 AVE:439.5mV PEAK SURGE FORWARD CURRENT:IFSM(A) 5 310 Ta=25℃ IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD CURRENT:IF(mA) Ta=75℃ 10 100 Ta=125℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 10 1ms time 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS Rev.B 1000 2/3 RB451F Diodes 0.1 0.07 REVERSE POWER DISSIPATION:PR (W) DC D=1/2 0.06 Sin(θ＝180) 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 FORWARD POWER DISSIPATION:Pf(W) 0.3 0.06 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 0.02 DC 0.01 0 0 0 0.1 0.2 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0A 0V 0.25 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 0.2 Io t DC 0.15 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1