RB461F Diodes Schottky barrier diode RB461F zApplications Low current rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 1.3 2.0±0.2 0.65 0.15±0.05 0.9MIN. 各リードとも Each lead has same dimension 同寸法 2.1±0.1 1.25±0.1 (3) 0.8MIN UMD3 (1) （0.65） zConstruction Silicon epitaxial planar 0.1Min 0～0.1 (2) （0.65） zStructure 0.7±0.1 1.3±0.1 1.6 0.3±0.1 zFeatures 1) Small mold type. (UMD3) 2) Low VF. 3) High reliability. 0.9±0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) zTaping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 φ0.5±0.05 4.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Limits 25 20 0.7 3 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF Min. - Typ. - Max. 0.49 Unit V IR - - 200 µA Conditions IF=700mA VR=20V Rev.B 1/3 RB461F Diodes zElectrical characteristic curves (Ta=25°C) 1 100 100000 Ta=125℃ Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 0.01 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 0.001 0.1 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 0 REVERSE CURRENT:IR(nA) 460 450 440 80 70 60 50 40 30 AVE:12.63uA 20 AVE:445.4mV 430 90 85 80 75 70 65 60 55 0 50 AVE:79.4pF Ct DISPERSION MAP IR DISPERSION MAP 10 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 8.3ms 10 5 AVE:5.20A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) 30 20 Ifsm 8.3ms 8.3ms 1cyc 5 0 0 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 20 Ta=25℃ f=1MHz VR=0V n=10pcs 95 10 VF DISPERSION MAP 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VR=20V n=30pcs 90 Ta=25℃ IF=0.7A n=30pcs 470 1 30 100 480 FORWARD VOLTAGE:VF(mV) 10 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=125℃ Time-Rth 1 1000 Ifsm t Rth(j-a) 0.8 100 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 10 1ms time 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 D=1/2 0.6 DC Sin(θ＝180) 0.4 0.2 0 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 1.5 2/3 RB461F Diodes 0.001 0.0006 D=1/2 0.0004 DC Sin(θ＝180) 0.0002 t 1 D=1/2 T DC VR D=t/T VR=10V Tj=125℃ 0.5 Sin(θ＝180) 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 t T D=1/2 0.5 VR D=t/T VR=10V Tj=125℃ Sin(θ＝180) 0 0 0 DC 1 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.0008 REVERSE POWER DISSIPATION:PR (W) 1.5 1.5 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1