RB520CS-30 Diodes Schottky barrier diode RB520CS-30 z Land size figure (Unit : mm) z Dimensions (Unit : mm) zApplications Low current rectification 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra Small power mold type. (VMN2) 2) Low IR 3) High reliability. VMN2 0.156 zConstruction Silicon epitaxial planar zStructure 0.37±0.03 0.35±0.1 ROHM : VMN2 dot (year week factory) + day z Taping specifications (Unit : mm) 2±0.05 0.7±0.05 2±0.05 φ1.55 0.2±0.05 8.0±0.2 1.1±0.05 3.5±0.05 1.75±0.1 4±0.1 φ0.5 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current 0.52 4.0±0.1 Limits 30 100 500 150 -40 to +150 Symbol VR Io IFSM Tj Tstg VF Min. - Typ. - Max. 0.45 Unit V IR - - 0.5 µA Unit V mA mA ℃ ℃ Conditions IF=10mA VR=10V Rev.C 1/3 RB520CS-30 Diodes zElectrical characteristic curves (Ta=25°C) 1000000 Ta=75℃ 10 1 Ta=-25℃ Ta=25℃ 0.1 0.01 100000 Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0.001 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 30 0 340 330 800 700 600 500 400 300 AVE:100.5nA 200 18 17 16 15 14 13 12 100 11 0 10 320 VF DISPERSION MAP AVE:15.94pF IR DISPERSION MAP Ct DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1cyc Ifsm 15 8.3ms 10 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 20 Ta=25℃ f=1MHz VR=0V n=10pcs 19 Ta=25℃ VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 350 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 900 REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS D=1/2 0.06 Sin(θ＝180) DC 0.04 0.02 time 0.015 0.01 D=1/2 DC 0.005 Sin(θ＝180) 300us 10 0.001 FORWARD POWER DISSIPATION:Pf(W) 0.08 REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 20 1000 Ta=25℃ VF=10mA n=30pcs AVE:338.8mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 370 360 10 1 0 600 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 Ta=125℃ f=1MHｚ Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 0 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 2/3 RB520CS-30 Diodes 0.3 0A 0V 0.2 DC Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 0.1 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.2 DC Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1