RB160VA-40 Diodes Schottky barrier diode RB160VA-40 z Land size figure (Unit : mm) z External dimensions (Unit : mm) zApplications General rectification 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 zFeatures 1) Small mold type. (TUMD2) 2) Low IF, Low IR. 3) High reliability. 0.8 0.5 2.0 1.3±0.05 TUMD2 zStructure zConstruction Silicon epitaxial planar 0.8±0.05 0.6±0.2 ROHM : TUMD2 0.1 dot (year week factory) + day z Taping specifications (Unit : mm) 0.25±0.05 1.75±0.1 8.0±0.2 2.75 2.8±0.05 φ1.55±0.1 0 2.0±0.05 3.5±0.0 5 4.0±0.1 1.43±0.05 4.0±0.1 φ1.0±0.2 0 0.9±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward peak surge current（60Hz・1cyc） Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg 40 40 1 5 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF Min. Typ. Max. Unit - 0.50 0.55 V IR - 1.5 50 µA Conditions IF=700mA VR=40V Rev.B 1/3 RB160VA-40 Diodes zElectrical characteristic curves (Ta=25°C) 100000 1 Ta=25℃ 0.01 Ta=-25℃ 1000 10 Ta=25℃ 1 Ta=-25℃ 0.1 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 500 AVE:501.9mV 490 20 15 10 AVE:1.5772uA 5 VF DISPERSION MAP 170 160 150 140 130 120 110 AVE:121.1pF Ct DISPERSION MAP IR DISPERSION MAP 30 20 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 8.3ms 10 5 AVE:15.6A Ifsm 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 8.3ms 8.3ms 1cyc 10 5 0 0 25 Ifsm t 20 15 10 5 0 1 10 100 1 Mounted on epoxy board 1 IF=0.2A 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP IM=10mA 180 100 0 480 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ VR=40V n=30pcs 25 REVERSE CURRENT:IR(uA) 520 1000 0 40 30 Ta=25℃ IF=0.7A n=30pcs 10 0.01 530 0.3 0.9 D=1/2 time Rth(j-a) 300us 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 0.8 1ms 0.7 REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 100 Ta=75℃ 100 0.001 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.1 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Ta=150℃ Ta=125℃ 10000 Ta=150℃ Sin(θ＝180) 0.6 DC 0.5 0.4 0.3 0.2 Sin(θ＝180) D=1/2 0.1 DC 0.2 0.1 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB160VA-40 Diodes 2 D=1/2 1.5 DC DC Io 0A 0V t T VR D=t/T VR=20V Tj=150℃ 1 0.5 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 Sin(θ＝180) 1.5 D=1/2 1 Io 0A 0V 0.5 t T VR D=t/T VR=20V Tj=125℃ 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1