RR274EA-400 Diodes Rectifier diodes RR274EA-400 zApplications General rectification zLand size figure (Unit : mm) zExternal dimensions (Unit : mm) 1.0 min. 0.8 2.9±0.1 ＋0.1 0.16±0.1 0.06 0.4 －0.05 各リードとも同寸法 Each lead has same dimension (5) (4) 0.45 0.35 2.8±0.2 1.6 ＋0.2 －0.1 0 .0 5 ±0 .0 4 0～0.1 (1) (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.95 0.3～0.6 0.95 zConstruction Silicon epitaxial planar TSMD5 0.7 0.35 0.45 0.95 1.9 zStructure 0.85±0.1 1.9±0.2 2.4 zFeatures 1)Small mold type. (TSMD5) 2) High reliability 1.0Max ROHM : TSMD5 dot (year week factory) + day zTaping dimensions (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Limits 400 0.5 8 150 -55 to +150 Symbol VR Io IFSM Tj Tstg 3.2±0.08 3.5±0.05 5.5±0.2 0～0.5 3.2±0.08 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature φ1.1±0.1 4.0±0.1 3.2±0.08 8.0±0.2 1.75±0.1 4.0±0.1 1.1±0.08 Unit V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Symbol VF Min. - Typ. - Max. 1.1 Unit V Reverse current IR - - 10 uA Conditions IF=0.5A VR=400V 1/3 RR274EA-400 Diodes zElectrical characteristic curves 1 100 100000 Ta=150℃ Ta=125℃ Ta=125℃ Ta=150℃ Ta=25℃ 0.01 Ta=-25℃ 10000 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.001 0 100 200 300 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 0 AVE:922.1mV 910 Ta=25℃ VR=400V n=30pcs 250 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ f=1MHz VR=0V n=10pcs 18 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 920 REVERSE CURRENT:IR(nA) 930 5 20 300 940 10 1 0 950 Ta=25℃ IF=1A n=30pcs f=1MHz 0.1 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=75℃ 200 150 100 AVE:19.27nA 16 14 12 AVE:13.65pF 10 50 8 6 4 2 900 VF DISPERSION MAP IR DISPERSION MAP 10 90 9 Ifsm Ifsm 80 70 1cyc 1cyc 8.3ms 8.3ms 60 50 40 AVE:16.5A 30 20 10 Ct DISPERSION MAP 50 Ta=25℃ IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 8 7 6 5 AVE:2.460us 4 3 2 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 RESERVE RECOVERY TIME:trr(us) PEAK SURGE FORWARD CURRENT:IFSM(A) 0 0 Ifsm 40 8.3ms 8.3ms 1cyc 30 20 10 1 0 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 100 Mounted on epoxy board IM=10mA IF=0.25A 1 1000 Ifsm t 30 20 10 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 ｶﾞﾗｽｴﾎﾟｷｼ基板実装時 1ms time Rth(j-a) 300us 100 Rth(j-c) 10 DC 0.8 FORWARD POWER DISSIPATION:Pf(W) 40 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 50 D=1/2 0.6 Sin(θ＝180) 0.4 0.2 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 2/3 RR274EA-400 Diodes 0.01 REVERSE POWER DISSIPATION:PR (W) 0.008 2 0A 0 0V 1.5 0.006 Sin(θ＝180) D=1/2 0.004 DC Io t t T T 1 D=1/2 D=t/ VR D=t/T T VR=200V Tj=150℃ DC 0.5 0.002 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 0A 0V 1.5 Io t T 1 VR D=t/T VR=200V Tj=150℃ DC D=1/2 0.5 Sin(θ＝180) Sin(θ＝180) 0 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 20 15 AVE:15.2kV 10 5 0 AVE:6.60kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1