RB731XN Diodes Schottky barrier diode RB731XN zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 0.65 2.0±0.2 各リードとも Each lead has same dimension 同寸法 0.25± 0.1 (6) (5) (1) (2) (4) 0.9 2.1±0.1 1.25±0.1 1.6 zFeatures 1) Small power mold type. (UMD6) 2) Low VF 3) High reliability 0.65 0.15±0.05 0.05 0～0.1 0.35 0.1Min (3) UMD6 0.65 0.65 0.7 1.3±0.1 0.9±0.1 zStructure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) zTaping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 φ1.1±0.1 4.0±0.1 2.2±0.1 2.4±0.1 8.0±0.2 5.5±0.2 0～0.5 2.45±0.1 2.4±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.15±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current ∗ IO 30 mA IFSM 200 mA Junction temperature Tj 125 °C Storage temperature Tstg −40 to +125 °C Forward current surge peak (60Hz 1cyc.) ∗ ∗ Rating for each diode Io/3 zElectrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 0.37 V IF=1mA Reverse current IR − − 1 µA VR=10V Capacitance between terminal Ct − 2 − pF VR=1V, f=1MHz Rev.B 1/3 RB731XN Diodes zElectrical characteristic curves Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 100 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 0.001 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 280 270 260 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 AVE:7.30A 35 6 5 4 3 2 1 0 AVE:2.52pF Ct DISPERSION MAP 10 Ifsm 8.3ms 8.3ms 1cyc 10 5 30 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 15 15 25 8 0.1 20 1cyc 20 9 IR DISPERSION MAP Ifsm 15 10 Ta=25℃ VR=10V n=30pcs VF DIPERSION MAP 20 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Ta=25℃ IF=1mA n=30pcs 290 250 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 0 1 IFSM DISPERSION MAP 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.03 D=1/2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 0.1 30 1 0.9 AVE:267.4mV TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 20 1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 FORWARD VOLTAGE:VF(mV) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 f=1MHz Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 Sin(θ＝180) 0.02 DC 0.01 0.002 DC 0.001 Sin(θ＝180) 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB731XN Diodes 0.1 Per chip 0.08 Io 0A 0V t 0.06 DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.04 0.02 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 Per chip 0.08 Io 0A 0V t 0.06 DC 0.04 D=1/2 0.02 Sin(θ＝180) T VR D=t/T VR=15V Tj=125℃ 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1