SURFACE MOUNT RECTIFIER ES1A Thru ES1M, Super Fast Cathode Band FEATURES • • • • • • Glass passivated junction chip Voltage range 50~1000 volts Low profile package Built-in strain relief Super fast recovery time for high efficiency High temperature soldering: 260°C / 10 seconds at terminals RoHS 1.0 Amp Suggested Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) MECHANICAL DATA 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) SMA (DO-214AC) Dimensions in inches and (millimeters) MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified . Single phase, h alf w ave , 60 H z, r esistive o r i nductive l oad . For capactitive l oad, d erate c urrent b y 20% Parameter Symbol ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J ES1M Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 1000 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 700 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 1000 V Maximum Average Forward Rectified Current I F(AV) .375" lead length @ Ta = 75˚C Peak Forward Surge Current 8.3ms single I FSM half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage (Note @ 1.0 A) VF Maximum DC Reverse Current @ TA = 25˚C At rated DC Blocking Voltage @ TA = 100˚C IR Maximum Reverse Recovery Time (Note 1) Trr Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range 1.0 A 30 A 0.95 1.30 1.7 V 5.0 200 35 µA 75 nS R 0JA 50 ˚C/W TJ -55 to +150 ˚C TSTG -55 to +150 ˚C Note: 1. Reverse Recovery Test Conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A 1 2. P.C.B. Mounted on 0.27 x 0.27" (7.0 X7.0mm) Copper Pad Area. Page 1 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] C3BR04 2013.07.15 SURFACE MOUNT RECTIFIER ES1A Thru ES1M, Super Fast RoHS 1.0 Amp 1.2 30 8.3 ms Single Half Sine-Wave 1.0 25 0.8 20 0.6 15 0.4 10 Resistive or Inductive Load Single Phase, half wave, 60Hz 0.2 5 0 0 0 100 10 1 100 25 50 75 100 125 150 175 1000 TJ = 150 °C TJ = 150 °C 10 TJ = 125 °C 100 TJ = 125 °C TJ = 100 °C 1 10 TJ = 100 °C 0.1 1 T J = 25°C TJ = 25 °C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 0 20 40 60 80 100 FIG.5-REVERSE RECOVER TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 W NON-INDUCTIVE (+) 50Vdc (approx) (-) 10 W NON-INDUCTIVE DUT PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance=1megohom 22pF 2. Rise Time=10ns max. Source Impedance=50 ohms. Set Time Base For 5/10ns/cm Page 2 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] C3BR04 2013.07.15