SMD HIGH EFFICIENT RECTIFIER US1A (G) thru US1M (G) 1.0 Amp Cathode Band Mounting Pad Layout FEATURES • Voltage Range 50 to 1000 Volts • Available in glass passivated chip junction with G suffix • Very Fast Recovery • Low forward voltage drop • High surge current capability • Epitaxial construction • High temperature soldering 260°C/10 seconds at terminals RoHS 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) MECHANICAL DATA 0.208 (5.28) 0.194 (4.93) • Molded plastic body (UL 94 V-0 Rated) • Solder plated terminals • Polarity: Indicated by cathode band • Packaging: 12mm tape EIA STD RS-481 • Weight: 0.064 gram SMA (DO-214AC) Dimensions in mm MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified Single phase, h alf w ave 60 H z, resistive o r i nductive l oad For capacitive l oad, d erate c urrent b y 20% Parameter Symbol US1A US1B US1D US1F US1G US1J US1K US1M Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current @ Ta = 50°C IF (AV) 1.0 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Instantaneous Forward Voltage @1.0A VF Maximum DC Reverse Current At rated DC blocking voltage IR @ TA = 25°C @ TA = 125°C Reverse Recovery Time (Note 1.) Junction Thermal Resistance (Note 2.) Operating Temperature Range Storage Temperature Range trr 1.0 1.3 1.7 5.0 50.0 50 V A 75 nS RθJL RθJT 25 55 °C / W TJ -55 to +125 / -55 to +175 for (G) °C TSTG -55 to +150 °C NOTE: 1. Reverse Recovery Test conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A. 2. Measured on P C Board with 0.2x0.2”(5.0x5.0mm) Copper Pad Areas Page 1 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] C3HER01 2013.04.24 SMD HIGH EFFICIENT RECTIFIER US1A (G) thru US1M (G) 1.0 Amp RoHS RATING & CHARACTERISTIC CURVES FIG.1-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.2-MAXIMUM CURRENT DERATING CURVE 1.2 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 100 1 50 1 20 1 10 1 5 8.3ms Single Half Sine Wave 1 JEDEC Method 2 1.0 0.8 0.6 0.4 2 2 0.20 (5.0mm ) x 0.5mil Inches (0.013mm) Thick Copper Pad Areas 0.2 1 1 1 10 0 0 100 20 40 NUMBER OF CYCLES AT 60Hz 80 100 120 140 160 180 Case Temperature (V) FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS 20 1000 US1A ~ US1D US1F ~ US1G 10 INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD SURGE CURRENT (A) 60 US1AG ~ US1MG US1A ~ US1M 4.0 2.0 US1J ~ US1M 1.0 0.4 0.2 0.1 TJ = 25°C Pulse width = 300µs 1% Duty Cycle 100 TJ = 125°C 10 TJ = 75°C 1.0 1 TJ = 25°C 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Page 2 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] C3HER01 2013.04.24