US1A (G) - RFE International, Inc.

SMD HIGH EFFICIENT RECTIFIER
US1A (G) thru US1M (G)
1.0 Amp
Cathode Band
Mounting Pad Layout
FEATURES
• Voltage Range 50 to 1000 Volts
• Available in glass passivated chip junction
with G suffix
• Very Fast Recovery
• Low forward voltage drop
• High surge current capability
• Epitaxial construction
• High temperature soldering
260°C/10 seconds at terminals
RoHS
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
MECHANICAL DATA
0.208 (5.28)
0.194 (4.93)
• Molded plastic body (UL 94 V-0 Rated)
• Solder plated terminals
• Polarity: Indicated by cathode band
• Packaging: 12mm tape EIA STD RS-481
• Weight: 0.064 gram
SMA (DO-214AC)
Dimensions in mm
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified
Single phase, h alf w ave 60 H z, resistive o r i nductive l oad
For capacitive l oad, d erate c urrent b y 20%
Parameter
Symbol
US1A US1B US1D US1F US1G US1J US1K US1M
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified Current
@ Ta = 50°C
IF (AV)
1.0
A
Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30
A
Maximum Instantaneous Forward Voltage @1.0A
VF
Maximum DC Reverse Current
At rated DC blocking voltage
IR
@ TA = 25°C
@ TA = 125°C
Reverse Recovery Time (Note 1.)
Junction Thermal Resistance (Note 2.)
Operating Temperature Range
Storage Temperature Range
trr
1.0
1.3
1.7
5.0
50.0
50
V
A
75
nS
RθJL
RθJT
25
55
°C / W
TJ
-55 to +125 / -55 to +175 for (G)
°C
TSTG
-55 to +150
°C
NOTE: 1. Reverse Recovery Test conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A.
2. Measured on P C Board with 0.2x0.2”(5.0x5.0mm) Copper Pad Areas
Page 1 of 2
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
C3HER01
2013.04.24
SMD HIGH EFFICIENT RECTIFIER
US1A (G) thru US1M (G)
1.0 Amp
RoHS
RATING & CHARACTERISTIC CURVES
FIG.1-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.2-MAXIMUM CURRENT DERATING CURVE
1.2
AVERAGE FORWARD CURRENT (A)
PEAK FORWARD SURGE CURRENT (A)
100
1
50
1
20
1
10
1
5
8.3ms Single
Half Sine Wave
1 JEDEC Method
2
1.0
0.8
0.6
0.4
2
2
0.20 (5.0mm ) x 0.5mil
Inches (0.013mm)
Thick Copper Pad Areas
0.2
1
1
1
10
0
0
100
20
40
NUMBER OF CYCLES AT 60Hz
80
100
120
140 160
180
Case Temperature (V)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
1000
US1A ~ US1D
US1F ~ US1G
10
INSTANTANEOUS REVERSE CURRENT (uA)
INSTANTANEOUS FORWARD SURGE CURRENT (A)
60
US1AG
~
US1MG
US1A
~
US1M
4.0
2.0
US1J ~ US1M
1.0
0.4
0.2
0.1
TJ = 25°C
Pulse width = 300µs
1% Duty Cycle
100
TJ = 125°C
10
TJ = 75°C
1.0
1
TJ = 25°C
0.1
0.02
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Page 2 of 2
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
C3HER01
2013.04.24