ROHM 2SB1713

2SB1713
Transistors
-3A / -12V Bipolar transistor
2SB1713
zApplications
Low frequency amplification, driver
zExternal dimensions (Unit : mm)
MPT3
1.5
2.5
4.0
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(Typ. = -250mV, at IC = -1.5A, IB = -30mA)
0.5
4.5
1.6
(2)
(3)
1.0
(1)
0.5
0.4
1.5
0.4
0.4
1.5
3.0
(1)Base
(2)Collector
zStructure
PNP epitaxial planar silicon transistor
Abbreviated symbol : XW
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
zPackaging specifications
Symbol
Limits
Unit
Package
MPT3
Collector-base voltage
VCBO
−15
V
Packaging type
Taping
Collector-emitter voltage
VCEO
−12
V
Code
T100
Emitter-base voltage
VEBO
−6
V
Part No.
Basic ordering unit (pieces)
1000
DC
IC
−3
Pulse
ICP
−6
∗1
A
2SB1713
0.5
∗2
2
∗3
Parameter
Collector current
Power dissipation
PC
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Collector-emitter breakdown voltage
BVCEO
−12
−
−
Collector-base breakdown voltage
BVCBO
−15
−
−
Emitter-base breakdown voltage
BVEBO
−6
−
−
Collector cut-off current
ICBO
−
−
−100
Emitter cut-off current
IEBO
−
−
−100
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
VCE(sat) ∗
−
−120 −250
hFE
270
−
680
fT
−
280
−
Cob
−
30
−
Conditions
IC= −1mA
V
IC= −10µA
IE= −10µA
nA
VCB= −15V
mV
IC/IB= −1.5A/ −30mA
−
VEB= −6V
VCE= −2V, IC= −500mA
MHz VCE= −2V, IE=500mA , f=100MHz
pF
VCB= −10V , IE=0mA , f=1MHz
∗ Pulsed
1/2
2SB1713
Transistors
125˚C
− 40˚C
100
VCE=−2V
Pulsed
10
0.001
0.01
0.1
1
10
1
125˚C
0.1
− 40˚C
0.01
IC/IB=20/1
Pulsed
0.001
0.001
0.01
COLLECTOR CURRENT : IC (A)
0.1
TRANSITION FREQUENCY : fr (MHz)
1000
1
25˚C
0.1
125˚C
− 40˚C
IC/IB=20/1
0.001 Pulsed
0.1
1
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
charactereistics
1
25˚C
− 40˚C
125˚C
IC/IB=20/1
0.1 Pulsed
0.001
10
Ta=25°C
VCE=2V
f=100MHz
0.1
1
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
0.1
1
10
Fig.3 Base−emitter saturation voltage
vs.collector current
100
10
0.01
0.01
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. collector current
10
0.01
10
1
10
COLLECTOR CURRENT : IC (A)
Fig1. DC current gain
vs. collector current
COLLECTOR CURRENT : IC (A)
25˚C
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
DC CURRENT GAIN : hFE
25˚C
BASE SATURATION VOLTAGE : VBE(sat) (V)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
IC=0A
f=1MHz
Ta=25°C
Cib
Cob
100
10
0.001
0.01
0.1
1
10
100
10
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig 6. Emitter input capacitance vs. emitter-base volatage
Collector output capacitance vs. collector-base voltage
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1