2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 1.5 2.5 4.0 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector zStructure PNP epitaxial planar silicon transistor Abbreviated symbol : XW (3)Emitter zAbsolute maximum ratings (Ta=25°C) zPackaging specifications Symbol Limits Unit Package MPT3 Collector-base voltage VCBO −15 V Packaging type Taping Collector-emitter voltage VCEO −12 V Code T100 Emitter-base voltage VEBO −6 V Part No. Basic ordering unit (pieces) 1000 DC IC −3 Pulse ICP −6 ∗1 A 2SB1713 0.5 ∗2 2 ∗3 Parameter Collector current Power dissipation PC W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw=1ms, Pulsed. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40×40×0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO −12 − − Collector-base breakdown voltage BVCBO −15 − − Emitter-base breakdown voltage BVEBO −6 − − Collector cut-off current ICBO − − −100 Emitter cut-off current IEBO − − −100 Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance VCE(sat) ∗ − −120 −250 hFE 270 − 680 fT − 280 − Cob − 30 − Conditions IC= −1mA V IC= −10µA IE= −10µA nA VCB= −15V mV IC/IB= −1.5A/ −30mA − VEB= −6V VCE= −2V, IC= −500mA MHz VCE= −2V, IE=500mA , f=100MHz pF VCB= −10V , IE=0mA , f=1MHz ∗ Pulsed 1/2 2SB1713 Transistors 125˚C − 40˚C 100 VCE=−2V Pulsed 10 0.001 0.01 0.1 1 10 1 125˚C 0.1 − 40˚C 0.01 IC/IB=20/1 Pulsed 0.001 0.001 0.01 COLLECTOR CURRENT : IC (A) 0.1 TRANSITION FREQUENCY : fr (MHz) 1000 1 25˚C 0.1 125˚C − 40˚C IC/IB=20/1 0.001 Pulsed 0.1 1 BASE TO EMITTER CURRENT : VBE (V) Fig.4 Grounded emitter propagation charactereistics 1 25˚C − 40˚C 125˚C IC/IB=20/1 0.1 Pulsed 0.001 10 Ta=25°C VCE=2V f=100MHz 0.1 1 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current 0.1 1 10 Fig.3 Base−emitter saturation voltage vs.collector current 100 10 0.01 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 10 0.01 10 1 10 COLLECTOR CURRENT : IC (A) Fig1. DC current gain vs. collector current COLLECTOR CURRENT : IC (A) 25˚C 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE 25˚C BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristics curves IC=0A f=1MHz Ta=25°C Cib Cob 100 10 0.001 0.01 0.1 1 10 100 10 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig 6. Emitter input capacitance vs. emitter-base volatage Collector output capacitance vs. collector-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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