Preliminary Datasheet BCR3LM-12RB R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 600V - 3A - Triac Low Power Use Features The Product guaranteed maximum junction temperature 150C Insulated Type Planar Type UL Recognized: File No. E223904 IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III:15 mA (10 mA)Note3 Viso: 1800 V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Electric rice cooker, electric pot, and other heater control Maximum Ratings Parameter Voltage class Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 12 600 720 VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 3 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 –40 to +150 –40 to +150 1.5 1800 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note5 R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 Unit V V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 130C 60 Hz sine wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute T1 T2 G terminal to case Page 1 of 7 BCR3LM-12RB Preliminary Electrical Characteristics Parameter Symbol Repetitive peak off-state current On-state voltage IDRM VTM Min. — — Rated value Typ. Max. — 2.0 — 1.5 Unit Test conditions mA V Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 15 Note3 15 Note3 15 Note3 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — — — — — — 5.2 V V C/W Gate non-trigger voltage Thermal resistance Notes: 1. 2. 3. 4. 5. Rth (j-c) Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote4 Gate open Measurement using the gate trigger characteristics measurement circuit. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it’s advisable that heatsink is electrically floating. R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 Page 2 of 7 BCR3LM-12RB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 40 Surge On-State Current (A) On-State Current (A) 102 101 Tj = 150°C 100 Tj = 25°C 10−1 0 1 2 3 10 0 100 4 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W VGT IGM = 0.5A PG(AV) = 0.3W 100 IrGT I 10−1 IFGT I, IRGT III 100 101 VGD = 0.1V 102 103 103 Typical Example IRGT III 102 IRGT I, IFGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) 0 40 80 120 Junction Temperature (°C) R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 160 Transient Thermal Impedance (°C/W) Gate Voltage (V) 20 On-State Voltage (V) 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 30 102 6 103 104 100 101 5 4 3 2 1 0 −1 10 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR3LM-12RB Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 Case Temperature (°C) On-State Power Dissipation (W) 5 4 360° Conduction Resistive, 3 inductive loads 2 1 0 0 1 2 3 4 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 120 t2.3 140 120 100 100 t2.3 100 60 60 t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 4 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 Typical Example 105 104 103 102 –40 0 40 80 120 Junction Temperature (°C) R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 160 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) Curves apply regardless of conduction angle 120 RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 140 3.0 103 Typical Example 102 101 –40 0 40 80 160 120 Junction Temperature (°C) Page 4 of 7 BCR3LM-12RB Preliminary Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 102 101 T2+, G+ Typical Example T2–, G– Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 100 –40 0 40 80 120 160 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example IRGT III IRGT I IFGT I 102 101 100 101 102 Gate Current Pulse Width (μs) R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 Page 5 of 7 BCR3LM-12RB Preliminary Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 Page 6 of 7 BCR3LM-12RB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number BCR3LM-12RB#B00 BCR3LM-12RB-A8#B00 Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Note : Please confirm the specification about the shipping in detail. R07DS0863EJ0100 Rev.1.00 Nov 14, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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