Preliminary Datasheet RJQ6003DPM 600V - 20A - IGBT and Diode High Speed Power Switching R07DS0846EJ0100 Rev.1.00 Aug 03, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 Diode2 3 IGBT1 Diode1 1. NC 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate 5 12 34 4 5 Absolute Maximum Ratings IGBT1, Diode1 Item Collector to emitter voltage/diode reverse voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature (Ta = 25°C) Symbol VCES/VR VGES IC Note1 IC Note1 Note3 IC(peak) Note1 IDF Note3 IDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 ±30 40 20 Unit V V A A 160 20 100 50 2.5 4.5 150 –55 to +150 A A A W °C/W °C/W °C °C Notes: 1. Limited by Tj max. 2. Value at Tc = 25°C 3. Pulse width limited by maximum safe operating area. R07DS0846EJ0100Rev.1.00 Aug 03, 2012 Page 1 of 8 RJQ6003DPM Preliminary Diode2 (Ta = 25°C) Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction to case thermal impedance Junction temperature Storage temperature Symbol VRM IF Note1 IFSM Note4 j-c Tj Tstg Ratings 600 20 80 4.5 150 –55 to +150 Unit V A A °C/W C C Notes: 4. 50 Hz sine half wave, Non-repetitive 1 cycle value, Tj = 25C. Electrical Characteristics IGBT Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage (Ta = 25°C) Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Min 4 Typ 1.37 1.7 Max 100 ±1 8 1.8 Unit A A V V V Input capacitance Output capacitance Cies Coes 2780 122 pF pF Reverse transfer capacitance Switching time Cres td(on) tr td(off) tf 43 53 145 105 85 pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note5 IC = 80 A, VGE = 15 V Note5 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note5 Inductive load Notes: 5. Pulse test Diode1, Diode2 Item Forward voltage Reverse current Reverse recovery Time FRD reverse recovery charge FRD peak reverse recovery current R07DS0846EJ0100Rev.1.00 Aug 03, 2012 (Ta = 25°C) Symbol VF IR trr Qrr Irr Min — — Typ 1.4 100 0.18 4.2 Max 1.9 1 Unit V A ns C A Test conditions IF = 30 A VR = 600 V IF = 30 A di/dt = 100 A/s Page 2 of 8 RJQ6003DPM Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics PW 100 = 10 Collector Current IC (A) 160 10 μs 0μ 10 s 1 0.1 1 Collector Current IC (A) 10 V 11 V 120 9.5 V 13 V 15 V 80 9V 40 8.5 V VGE = 8 V 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 160 Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C 0 2 4 6 –25°C 8 10 3.0 Ta = 25°C Pulse Test 2.6 IC = 20 A 40 A 2.2 80 A 1.8 1.4 1.0 6 12 8 2.2 2.0 VGE = 15 V Pulse Test IC = 80 A 1.8 40 A 1.6 1.4 20 A 1.2 1.0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0846EJ0100Rev.1.00 Aug 03, 2012 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 10.5 V Pulse Test Ta = 25°C Tc = 25°C Single pulse Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 VCE = 10 V Pulse Test 8 IC = 10 mA 6 1 mA 4 2 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 8 RJQ6003DPM Preliminary Typical Capacitance vs. Collector to Emitter Voltage Forward Current vs. Forward Voltage (Typical) 10000 80 Capacitance C (pF) Diode Forward Current IF (A) 100 60 40 VGE = 0 V Ta = 25°C Pulse Test 20 VGE = 0 V f = 1 MHz Cies 1000 100 Coes Cres Ta = 25°C 0 10 0 1 2 0 4 3 C-E Diode Forward Voltage VCEF (V) 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) 800 VGE VCE 600 16 12 VCC = 300 V 600 V 400 8 VCC = 600 V 300 V 200 4 IC = 40 A Ta = 25°C 0 0 20 40 60 80 0 100 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Gate Charge Qg (nc) R07DS0846EJ0100Rev.1.00 Aug 03, 2012 Page 4 of 8 RJQ6003DPM Preliminary Switching Characteristics (Typical) (1) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 Switching Characteristics (Typical) (2) tf td(off) 100 tr td(on) VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery 10 1 10 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 10000 1000 Eoff 100 Eon 10 1 100 200 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 1600 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery Swithing Energy Losses E (μJ) Switching Times t (ns) 300 200 tr 150 td(off) 100 tf 50 0 25 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 250 10 td(on) VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 1200 Eoff 800 Eon 400 0 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0846EJ0100Rev.1.00 Aug 03, 2012 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 8 RJQ6003DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 2.5 °C/W, Tc = 25°C 0.1 0.1 0.05 0.02 PDM D= 0.01 1 shot pulse 0.01 100 μ 1m PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 4.5°C/W, Tc = 25°C 0.05 0.1 0.02 0.01 1 shot pulse 0.01 100 μ PDM PW T PW T 1m 10 m 100 m Pulse Width R07DS0846EJ0100Rev.1.00 Aug 03, 2012 D= 1 10 100 PW (s) Page 6 of 8 RJQ6003DPM Preliminary Switching Time Test Circuit Waveform 90% Diode clamp 10% VGE L 90% 10% 1% 10% IC D.U.T 90% td(on) VCC tr td(off) tf ttail ton Rg toff VCE 10% Diode Reverse Recovery Time Test Circuit Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0846EJ0100Rev.1.00 Aug 03, 2012 0.5 Irr 0.9 Irr Page 7 of 8 RJQ6003DPM Preliminary Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0005ZB-A Previous Code TO-3PFM-5 15.6 ± 0.3 Unit: mm 5.5 ± 0.3 19.9 ± 0.3 +0.4 −0.2 2.0 ± 0.3 5.0 ± 0.3 φ3.2 MASS[Typ.] 5.3g 5.0 ± 0.3 Package Name TO-3PFM-5 2.25 ± 0.3 19.7 ± 0.5 3.2 ± 0.3 1.40 0.86 0.66 +0.2 −0.1 +0.2 0.9 −0.1 2.725 2.725 Ordering Information Orderable Part Number RJQ6003DPM-00#T0 R07DS0846EJ0100Rev.1.00 Aug 03, 2012 Quantity 360 pcs Shipping Container Box (tube) Page 8 of 8 Notice 1. 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