Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 90 50 200 50 200 300 0.42 1.07 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Page 1 of 9 RJH60D7DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage VBR(CES) Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 1.8 3000 160 85 130 20 45 60 46 190 ±1 6.0 2.2 — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note3 IC = 90 A, VGE = 15 V Note3 tf Eon Eoff Etotal tsc — — — — 3.0 50 1.1 0.6 1.7 5.0 — — — — — ns mJ mJ mJ s FRD forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 1.4 100 0.4 6.5 2.0 — — — V ns C A Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Symbol Typ — Max — Unit V Test Conditions IC =10 A, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 50 A VCC = 300 V VGE = 15 V IC = 50 A Rg = 5 (Inductive load) VCC 360 V, VGE = 15 V IF = 50 A Note3 IF = 50 A diF/dt = 100 A/s Notes: 3. Pulse test R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Page 2 of 9 RJH60D7DPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 120 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 0 25 50 75 60 40 20 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 300 PW 100 10 0 = 10 μs Collector Current IC (A) 1000 μs 10 1 0.1 1 Tc = 25°C Single pulse 250 200 150 100 50 0 10 100 0 1000 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics Pulse Test Tc = 25°C 160 120 Pulse Test Tc = 150°C 11 V 10 V 15 V Collector Current IC (A) Collector Current IC (A) 80 0 0 Collector Current IC (A) 100 9V 80 VGE = 8 V 40 0 160 11 V 15 V 10 V 120 9V 80 VGE = 8 V 40 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 RJH60D7DPQ-E0 Preliminary Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Tc = 25°C Pulse Test 4 IC = 50 A 90 A 3 2 1 4 8 12 16 20 Collector Current IC (A) 5 Tc = 150°C Pulse Test 4 IC = 50 A 90 A 3 2 1 4 20 16 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) 160 150°C 120 80 40 VCE = 10 V Pulse Test 0 4 8 12 16 20 2.4 VGE = 15 V Pulse Test 2.2 IC = 90 A 2.0 1.8 50 A 1.6 25 A 1.4 1.2 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Frequency Characteristics (Typical) 10 50 Collector Current IC(RSM) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 12 Gate to Emitter Voltage VGE (V) Tc = 25°C 8 IC = 10 mA 6 4 1 mA 2 VCE = 10 V Pulse Test 0 −25 8 Gate to Emitter Voltage VGE (V) 200 0 Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 40 0 Collector current wave (Square wave) 30 20 10 0 1 Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50% 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60D7DPQ-E0 Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 td(off) tf 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 100 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon 1 Eoff 0.1 0.01 10 1 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 50 A, Tc = 150°C 1000 td(off) tf 100 tr td(on) 10 10 VCC = 300 V, VGE = 15 V IC = 50 A, Tc = 150°C Eon 1 Eoff 0.1 1 10 100 1 1000 Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 50 A, Rg = 5 Ω td(off) tf td(on) tr 10 25 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 100 10 Collector Current IC (A) (Inductive load) 10000 Switching Times t (ns) Switching Characteristics (Typical) (2) 150 10 VCC = 300 V, VGE = 15 V IC = 50 A, Rg = 5 Ω Eon 1 Eoff 0.1 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH60D7DPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes VGE = 0 V f = 1 MHz Tc = 25°C 10 0 50 Cres 100 150 200 250 300 800 IC = 50 A Tc = 25°C 600 200 4 VCE 0 0 Tc = 150°C 200 150 100 25°C 0 80 120 160 120 0 200 160 2.0 VCC = 300 V IF = 50 A 1.6 Tc = 150°C 1.2 0.8 25°C 0.4 0 200 0 Diode Current Slope di/dt (A/μs) 40 80 120 160 200 Diode Current Slope di/dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 200 VCC = 300 V IF = 50 A Forward Current IF (A) Reverse Recovery Current Irr (A) 80 Gate Charge Qg (nc) Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) VCC = 300 V IF = 50 A 40 40 Reverse Recovery Charge vs. Diode Current Slope (Typical) 300 0 12 8 Reverse Recovery Time vs. Diode Current Slope (Typical) 50 VGE 400 Collector to Emitter Voltage VCE (V) 250 16 VCE = 300 V Gate to Emitter Voltage VGE (V) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 Tc = 150°C 8 25°C 4 0 160 Tc = 25°C 150°C 120 80 40 VCE = 0 V Pulse Test 0 0 40 80 120 160 200 Diode Current Slope di/dt (A/μs) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Preliminary Normalized Transient Thermal Impedance γs (t) RJH60D7DPQ-E0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.42°C/W, Tc = 25°C 0.05 0.1 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m 1 100 10 Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 1.07°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 1 shot pulse 0.01 100 μ R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Page 7 of 9 RJH60D7DPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 0.5 Irr 0.9 Irr Page 8 of 9 RJH60D7DPQ-E0 Preliminary Package Dimension JEITA Package Code RENESAS Code PRSS0003ZE-A Previous Code MASS[Typ.] 6.0g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part No. RJH60D7DPQ-E0#T2 R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Quantity 240 pcs Shipping Container Box (Tube) Page 9 of 9 Notice 1. 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