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设计范例报告
标题
使用TOPSwitchTM-JX TOP268VG和ChiPhyTM
CHY100D设计的兼容高压专用充电端口(HVDCP)
Quick Charge 2.0的24 W高效率CV/CC适配器
规格
90 VAC – 265 VAC输入；12 V，9 V，5 V / 2 A
输出
应用
适配器
作者
应用工程部
文档编号
DER-381
日期
2014年4月11日
修订版本
1.2
特色概述
• 兼容HVDCP（高压专用充电端口）快速充电技术
• 完全支持Quick Charge 2.0 Class A规范（5 V、9 V和12 V输出电压）
• PCB尺寸小 - 67 mm x 39 mm
• 采用132 kHz开关频率可减小磁芯尺寸
• 严格的稳压控制实现CV模式，严格的稳流控制实现CC模式
• 出色的瞬态负载响应
• 自动恢复的迟滞过热保护和过压保护
• Power Integrations eDIP薄型封装
• 满足传导EMI限值，QP裕量 >-4dB
专利信息
此处介绍的产品和应用（包括产品之外的变压器结构和电路）可能包含一项或多项美国及国外专利，或正在申请的
美国或国外专利。有关Power Integrations专利的完整列表，请参见www.powerint.com。Power Integrations按照在
<http://www.powerint.com/ip.htm>中所述规定，向客户授予特定专利权利的许可。
Power Integrations
5245 Hellyer Avenue, San Jose, CA 95138 USA.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
目录
简介 ............................................................................................................................ 4
电源规格 ..................................................................................................................... 7
电路原理图.................................................................................................................. 8
电路描述 ..................................................................................................................... 9
4.1
可实现快速充电的高压专用充电端口(CHY100D) ................................................. 9
4.2
输入EMI滤波........................................................................................................ 9
4.3
TOPSwitch-JX初级 .............................................................................................. 9
4.4
热过载保护 ........................................................................................................ 10
4.5
输出整流、滤波、次级偏置和反馈控制.............................................................. 10
5 PCB布局 ................................................................................................................... 11
6 物料清单(BOM)......................................................................................................... 12
7 变压器规格................................................................................................................ 14
7.1
电气原理图 ........................................................................................................ 14
7.2
电气规格 ............................................................................................................ 14
7.3
材料 ................................................................................................................... 14
7.4
结构图................................................................................................................ 15
7.5
绕制 ................................................................................................................... 16
7.6
绕制图示 ............................................................................................................ 17
8 共模扼流圈规格(L3) .................................................................................................. 26
8.1
电气原理图 ........................................................................................................ 26
8.2
电气规格 ............................................................................................................ 26
8.3
材料 ................................................................................................................... 26
8.4
绕制说明 ............................................................................................................ 26
8.5
图示 ................................................................................................................... 26
9 变压器设计表格 ........................................................................................................ 27
10 U1散热片装配 ........................................................................................................... 31
10.1
散热片加工图 ................................................................................................. 31
10.2
散热片装配图 ................................................................................................. 32
10.3
散热片和U1装配图 ......................................................................................... 33
11
性能数据................................................................................................................ 34
11.1
满载效率 ........................................................................................................ 34
11.2
带载模式效率 ................................................................................................. 35
11.3
能效要求 ........................................................................................................ 38
11.3.1 美国2007年《能源独立和安全法案》 ......................................................... 39
11.3.2 能源之星外部电源规范2.0版 ....................................................................... 39
11.4
空载输入功率 ................................................................................................. 40
11.5 CV/CC ............................................................................................................... 41
12
热性能 ................................................................................................................... 44
13
波形 ....................................................................................................................... 46
1
2
3
4
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第2页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.1
漏极电压和电流，正常工作 ............................................................................46
13.2
输出电压启动特征 ..........................................................................................46
13.2.1 5 V、2 A CR负载启动 .................................................................................46
13.2.2 5 V、0.2 A CR负载启动 ..............................................................................47
13.3
漏极电压和电流启动特征 ................................................................................48
13.4
输出二极管反向峰值电压 ................................................................................48
13.5
负载瞬态响应..................................................................................................49
13.5.1 12 V输出；0.5 A - 1.75 A - 0.5 A负载阶跃 ..................................................49
13.5.2 5 V输出；0.5 A - 1.75 A - 0.5 A负载阶跃 ....................................................50
13.6
输出纹波测量..................................................................................................51
13.6.1 纹波测量方法 ..............................................................................................51
13.6.2 PCB的测量数据 ..........................................................................................52
13.7
输出电压切换..................................................................................................54
13.7.1 满载2 A时输出向上切换 ..............................................................................54
13.7.2 半载1 A时输出向上切换 ..............................................................................55
13.7.3 轻载0.15 A时输出向上切换 .........................................................................56
13.7.4 满载2 A时电压向下切换 ..............................................................................57
13.7.5 半载1 A时电压向下切换 ..............................................................................58
13.7.6 轻载0.15 A时电压向下切换 .........................................................................59
13.8 USB断开后波形 .................................................................................................60
13.8.1 9 V USB断开后波形 ....................................................................................60
13.8.2 12 V USB断开后波形 ..................................................................................60
13.9
控制环路测量..................................................................................................61
13.9.1 12 V环路测试 ..............................................................................................61
13.9.2 5 V环路测试 ................................................................................................61
14
传导EMI.................................................................................................................62
15
附录A – 特别装配说明 ...........................................................................................65
15.1
材料 ................................................................................................................65
15.2
变压器安装(T1)...............................................................................................65
15.3
散热片安装 .....................................................................................................66
15.4
电容安装(C2) ..................................................................................................67
15.5
涂覆RTV（C1和 L3） ....................................................................................68
16
版本历史 ................................................................................................................69
重要说明：
虽然本电路板的设计满足安全隔离要求，但工程原型尚未获得机构认证。因此，必须使用
隔离变压器向原型板提供AC输入，以执行所有测试。
第3页（共70页）
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
1 简介
本文档是一份工程报告，介绍使用TOPSwitch-JX TOP268VG设计的一款适配器电源。
该电源可用作ChiPhy产品系列的通用评估平台。本适配器采用CHY100D设计而成，可在
通用输入电压范围内工作，提供最大恒流为2 A的可选输出电压（即5 V、9 V和12 V）。
按照设计，TOPSwitch-JX器件可以在非常宽的负载范围内维持几乎恒定的效率，无需
采用特殊的工作模式即可满足特定的负载阈值。这可以优化电源性能，从而满足现行及
最新的能效规范。维持恒定的效率可确保设计最优化，适应未来的能效标准变化而无需
重新设计。
TOPSwitch-JX所具有的低MOSFET电容允许使用更高的开关频率，不会出现标准分立
MOSFET存在的效率损失。132 kHz开关频率（而不是用于分立MOSFET的40 kHz至60 kHz
频率）可以减小所需的变压器尺寸，从而降低成本。
该电源满足能源之星2.0平均效率>80%、230 VAC下空载功耗 <300 mW的要求，同时满足
CISPR传导EMI标准，裕量超过4dB。
该电源提供使用更大迟滞的自动恢复过热保护。它属于初级侧检测的输出过载和过压保
护，即使是单故障也能检测。
本文档提供了完整的设计详细资料，包括电源规格、电路原理图、物料清单、PCB布局、
变压器设计及构建数据。此外还包括与调整、效率、瞬态负载和传导EMI扫描有关的性能
结果。
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第4页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Figure 1 – Plastic Enclosure (Dimension: 74 mm x 44 mm x 23 mm).
第5页（共70页）
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
Figure 2 – Populated Circuit Board Photograph, Top.
Figure 3 – Populated Circuit Board Photograph, Bottom.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第6页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
2 电源规格
下表所列为设计的最低可接受性能。实际性能可参考测量结果部分。
说明
输入
电压
频率
空载输入功率(230 VAC)
输出
输出电压1
输出电流1
输出纹波电压1
输出电压2
输出电流2
输出纹波电压2
输出电压3
输出电流3
输出纹波电压3
总输出功率
连续输出功率
符号
VIN
fLINE
VOUT1
IOUT1
VRIPPLE1
VOUT2
IOUT2
VRIPPLE2
VOUT3
IOUT3
VRIPPLE3
最小值 典型值 最大值
90
47
50/60
单位
备注
VAC
Hz
W
双导线 – 无P.E.
± 2%，PCB
2
100
V
A
mVPP
V
A
mVPP
V
A
mVPP
24
W
在POUT 25 C条件下测得；
12 V 输出 - 1.5 A负载
%
在POUT 25 C条件下测得；
12 V 输出 - 1.5 A负载
265
64
0.15
12
0
2
120
9
0
2
100
5
0
POUT
5V
20 MHz带宽
± 2%，PCB
20 MHz带宽
± 2%，PCB
20 MHz带宽
效率
满载
在POUT的25%、50%、75%及
100 %条件下测得的效率平均值
η
ηES2.0
85
82
%
依据能源之星EPS V2.0
环境
传导EMI
满足CISPR22B / EN55022B要求
安全
环境温度
第7页（共70页）
其设计符合IEC950 / UL1950 II类要求
TAMB
-5
25
35
C
自然对流，海平面
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
3 电路原理图
Figure 4 – Schematic.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第8页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
4 电路描述
该电源使用TOP268VG集成离线式开关IC (U1)设计而成，采用可实现低空载功耗、高效率
和紧凑外形的反激式拓扑结构，它可以在通用输入电压范围内工作并提供可选输出，
即12 V – 2 A、9 V – 2 A和5 V – 2 A输出。IC U1具有一个集成的725 V MOSFET和一个多
模式控制器。它基于馈入到控制(C)引脚的电流并通过调节MOSFET占空比来调整输出。
4.1
可实现快速充电的高压专用充电端口(CHY100D)
该电源能够提供最大恒流为2 A的可选输出电压（即5 V、9 V和12 V）。默认输出（即空载
已连接）为5 V。输出电压的选择取决于来自负载的通过D+和D-实现接口的逻辑信号。
逻辑信号将从其输出端产生逻辑信号低（即V1-SEL_N、V1-SEL_N、V3-SEL_N），拉低
分压器网络R17、RN1、RN2和RN3的节点，从而提供相应的输出电压。
4.2
输入EMI滤波
保险丝F1为电路提供严重故障保护，并将其从交流电源隔离。二极管BR1对AC输入进行
整流。电容C1和C2对整流后的DC进行滤波。大容量电容C1降低差模噪声EMI。电感L3对
共模EMI进行滤波。该输入滤波器符合UL标准60950-1，无需泄放电阻即可安全断开交流
电源。
4.3
TOPSwitch-JX初级
U1的EcoSmart® 特性可在整个负载范围内自动提供恒定的效率。它采用了专有的多模式
调制(MCM)功能，无需配置在特定负载下触发的特殊工作模式。这样可以简化电路设计，
因为它不用设计异常或特定的工作条件或负载阈值。
该电源选择132 kHz（而不是66 kHz）的开关频率来减小变压器尺寸。这种高频率工作方
式对效率或EMI没有明显影响，因为采用了电容极低的PI功率MOSFET技术和专有的频率
抖动特性。
TOP268VG基于流入到控制(C)引脚的电流并通过调节占空比来调整输出。电源的输出电压
和电流由分流稳压器U2在次级侧检测，并通过光耦器U3向初级侧提供反馈信号。
电容C8为U1、启动和环路补偿提供自动重启动时序。启动时，该电容通过漏极(D)引脚
充电。充电后，U1开始开关。电容C8存储足够的能量，以确保电源输出达到稳压。
启动后，偏置绕组通过流经光耦器进入控制引脚的电流对控制器供电。旁路电容C6应尽量
靠近U1放置。电阻R9为反馈环路提供额外的补偿。
由C4、R2、R3、R4、R41和D5组成的箝位网络限制漏极电压（防止MOSFET关断时出现
电压尖峰），并耗散存储在变压器漏感中的能量。
第9页（共70页）
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
为进一步降低高输入电压下的空载输入功率，添加了电阻R19以便从C引脚向V引脚提供
25 μA的电流。这可以改变控制引脚的工作点（线电压前馈功能）。添加R19后，进入控制
引脚用以设定给定占空比的绝对电流将减小~50%，从而降低来自偏置绕组和输出端的功
耗。线电压检测电阻R5和R6值设定在约75 VAC，获得切入电压。
X引脚电阻R1用来降低U1的内部流限。这样，可将高输入电压下的电源输出功率限制到
<100 VA，同时保持低输入电压的额定输出功率。
4.4
热过载保护
IC U1具有经100%测试的集成精确锁存热过载保护功能。如果结温度达到+142 °C（故障
期间），U1将关断。输入电压断开且C1和C2放电后，锁存条件将复位。
4.5
输出整流、滤波、次级偏置和反馈控制
肖特基二极管D8对输出进行整流。缓冲电路（C14和R11）可阻尼二极管振铃，并降低高
频传导和辐射噪声。这两个元件选取较小的值，用以阻尼高频振铃，同时确保它们在空载
下造成的任何功率耗散始终保持最小。磁珠L2和电容C13形成一个输出次级滤波器。电容
C11和C24提供输出滤波。
由于CV/CC功能，次级偏置必须同时来自输出电压（反激式绕组）和正向偏置绕组。对于
CV工作模式，次级偏置来自输出电压，因为D16被输出电压阻断。二极管D14和C27整流
正向偏置绕组，由Q3、R34、R43和VR4组成的线性稳压器将C27转换为约为4 V的恒压。
在CC工作模式下，一旦输出电压低于线性稳压器的输出电压，次级控制电路将从正向绕组
偏置。
电阻R16、RN1、RN2、RN3和R17形成一个分压器，可设置输出的DC设置点。输出电压
通过外部切换板选择，该板有一个预编程的微控制器。微控制器将根据来自USB端子D+和
D-的逻辑信号来确定负载所需的输出电压（即5 V、9 V或12 V）。电容C9和电阻R15提供
反馈控制环路补偿。当在恒流模式下工作时，电容C18和电阻R22提供补偿反馈控制。电
阻R13和R44限制反馈系统的增益，以确保电源在整个工作范围内的稳定性。RC网络C23
和R28以较高的交越频率提供相位升压。电阻R13、R45、R46和Q4用于在输出电压从高
压切换到5 V时对输出电容放电。在轻载下，输出放电网络非常重要，因为反馈电压可长时
间高于参考电压并使误差放大器饱和，因而导致严重下冲。
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第10页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
5 PCB布局
Figure 5 – Printed Circuit Layout Top and Bottom (69.5 mm x 39.5 mm).
第11页（共70页）
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
6 物料清单(BOM)
Item
Qty
Ref Des
1
1
BR1
2
1
C1
3
1
C2
Description
600 V, 0.5 A, Bridge Rectifier, SMD,
MBS-1, 4-SOIC
10 μF, 400 V, Electrolytic, Low ESR,
79 mA, (10 x 12.5)
47 μF, 400 V, Electrolytic, Low ESR,
(12.5 x 30)
1 nF, 250 V, Ceramic, X7R, 0805
Mfg
Mfg Part Number
MB6S-TP
Micro Commercial
TYD2GM100G13O
Ltec
EPAG401ELL470MK30S
Nippon Chemi-Con
GRM21AR72E102KW01D
Murata
4
2
C4 C14
5
4
C6 C9 C18 C26
100 nF 50 V, Ceramic, X7R, 0603
C1608X7R1H104K
TDK
6
1
C7
10 μF, 50 V, Ceramic,X5R, 1210
UMK325BJ106KM-T
Taiyo Yuden
7
1
C8
3216X5R1C476M
TDK
8
2
C11 C24
EKZE250ELL471MJ16S
Nippon Chemi-Con
9
1
C13
ELXZ250ELL470MEB5D
Nippon Chemi-Con
10
2
C23 C29
47μF, 16 V, X5R, 1206
470 μF, 25 V, Electrolytic, Very Low
ESR, 38 mΩ, (10 x 16)
47 μF, 25 V, Electrolytic, Low ESR,
500 mΩ, (5 x 11.5)
220 nF, 25 V, Ceramic, X7R, 0603
11
2
C27 C30
10 μF, 25 V, Ceramic, X7R, 1206
06033D224KAT2A
AVX
C3216X7R1E106M
TDK
BFC233920473
Vishay
12
1
C28
47 nF, 310 VAC, Polyester Film, X2
13
1
C31
10 nF 50 V, Ceramic, X7R, 0603
C0603C103K5RACTU
Kemet
14
1
C32
470 nF, 50 V, Ceramic, X7R, 0603
UMK107B7474KA-TR
Taiyo Yuden
15
1
CY1
VY1102M35Y5UG63V0
Vishay
16
1
D5
DFLR1600-7
Diodes, Inc.
17
2
D6 D14
BAV21WS-7-F
Diodes, Inc.
18
1
D8
1 nF, 500Vac, Ceramic, Y1
600 V, 1 A, Rectifier, Glass
Passivated, POWERDI123
250 V, 0.2 A, Fast Switching, 50 ns,
SOD-323
100 V, 8 A, Schottky, TO-220AC
8TQ100PBF
Vishay
19
2
D15 D16
30 V,0.2 A, Schottky, SMD, SOT-23
BAT54ALT1G
Diodes, Inc.
20
1
F1
5 A, 250 V, Fast, Microfuse, Axial
0263005.MXL
Littlefuse
21
2
FL1 FL2
22
1
FL3
23
1
HS1
24
1
J1
25
1
J3
26
1
L2
27
1
L3
28
1
Q2
29
1
Q3
30
1
Q4
31
1
R1
32
2
33
2
34
PCB Terminal Hole, 22 AWG
N/A
N/A
PCB Terminal Hole, 30 AWG
Heat Sink, Custom, Al, 1100, 0.032"
Thk
AC Input Receptacle
N/A
N/A
Custom
S-01-02A
Sunfair
USB-AF-DIP-094-H
GOLDCONN
2743001112
Fair-Rite
SNX-1710
Santronics
MMBT4401LT1G
Diodes, Inc.
ZTX792A
Zetex
ERJ-6ENF1542V
Panasonic
R2 R3
CONN USB FMALE TYPE A
3.5 mm x 4.45 mm, 68 Ω at 100
MHz, #22 AWG hole, Ferrite Bead
8 mH, xA, Ferite Toroid, 4 Pin,
Output
open
NPN, Small Signal BJT, GP SS, 40
V, 0.6 A, SOT-23
PNP, Power BJT, 70 V, 2 A, TO-92
15.4 kΩ, 1%, 1/8 W, Thick Film,
0805
75 kΩ, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ753V
Panasonic
R4 R41
91 Ω, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ910V
Panasonic
2
R5 R6
5.1 MΩ, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ515V
Panasonic
35
1
R9
6.8 Ω, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ6R8V
Panasonic
36
1
R11
22 Ω, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ220V
Panasonic
37
2
R13 R44
280 Ω, 1%, 1/16 W, Thick Film, 0603
ERJ-3EKF2800V
Panasonic
38
2
R15 R34
ERJ-6GEY0R00V
Panasonic
39
1
R16
0 Ω, 5%, 1/8 W, Thick Film, 0805
84.5 kΩ, 1%, 1/16 W, Thick Film,
0603
ERJ-3EKF8452V
Panasonic
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
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第12页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
ERJ-3EKF2672V
Panasonic
ERJ-3EKF1913V
Panasonic
R20
26.7 kΩ, 1%, 1/16 W, Thick Film,
0603
191 kΩ, 1%, 1/16 W, Thick Film,
0603
0.22 Ω, 1%, 1/4 W, Thick Film, 1206
ERJ-8RQJR22V
Panasonic
R21 R43
1 kΩ, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ102V
Panasonic
1
R22
ERJ-6GEYJ512V
Panasonic
45
1
R26
ERJ-3EKF4531V
Panasonic
46
1
R27
ERJ-3EKF1273V
Panasonic
47
1
R28
ERJ-3GEYJ200V
Panasonic
48
1
R29
ERJ-3GEYJ394V
Panasonic
49
1
R30
5.1 kΩ, 5%, 1/8 W, Thick Film, 0805
4.53 kΩ, 1%, 1/16 W, Thick Film,
0603
127 kΩ, 1%, 1/16 W, Thick Film,
0603
20 Ω, 5%, 1/10 W, Thick Film, 0603
390 kΩ, 5%, 1/10 W, Thick Film,
0603
0.15 Ω, 5%, 1/4 W, Thick Film, 1206
ERJ-8RSJR15V
Panasonic
50
1
R37
0 Ω, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEY0R00V
Panasonic
51
1
R38,R40,R42,RN3
52
1
R45
20 Ω, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ200V
Panasonic
53
1
R46
CFR-25JB-20R
Yageo
54
1
RN1
ERJ-3EKF2612V
Panasonic
55
1
RN2
ERJ-3EKF3322V
Panasonic
56
1
RN3
20 Ω, 5%, 1/4 W, Carbon Film
26.1 kΩ, 1%, 1/16 W, Thick Film,
0603
33.2 kΩ, 1%, 1/16 W, Thick Film,
0603
open
57
1
RV1
Littlefuse
Ferroxcube
58
1
T1
59
1
U1
V250LA4P
CSV-RM7-1S-8P-C. Clip PN
CLI/P-RM7
SNX-R1711
POL-JX025
TOP268VG
Santronics
Premier Magnetics
Power Integrations
60
1
U2
TSM1052
ST Micro
61
1
U3
PC357N4J00F
Sharp
62
1
U4
CHY100D
Power Integrations
63
1
VR3
open
64
1
VR4
DZ2S047M0L
65
1
INSULATION1
Panasonic
Parker/Texloc
(Atlantic Tubing)
66
1
TAPE1
40
1
R17
41
1
R19
42
1
43
3
44
open
250 V, 21 J, 7 mm, RADIAL LA
Bobbin, RM7/I, Vertical, 8 pins with
mtg clip CLI/P-RM7
Transformer
Transformer
TOPSwitch-JX, eDIP-12P
IC CONTROLLER CC/CV SMPS,
SOT23-6
Optocoupler, 80 V, CTR 80-160%, 4Mini Flat
High Voltage Driver
67
1
RTV1
4.7 V, 5%, 150 mW, SSMINI-2
Tubing & Sleeving-Non Shrink, #20
AWG TUBING PTFE
THERMAL TAPE DOUBLE
SIDED .008"
RTV 670810.10ZCLR Silico
68
1
Jumper
0.4 inch #24 AWG, 0.4 (next to R46)
第13页（共70页）
TFT20-NT
BOND PLY 108 10X10"
Bergquist
RTV670810.10ZCLR
GE
1808
Alpha
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
7 变压器规格
7.1
电气原理图
1
WD3 (1st Primary):
59T – #31AWG
8
1
WD4 (Shield):
1 turn of Copper Foil
FL1
WD1 (1st Secondary):
4.5T – 2 x #25AWG_TIW
WD5 (2nd Secondary):
4.5T – 2 x #25AWG_TIW
FL2
7
WD2 (Bias):
18T – #30AWG
6
FL3
WD6 (Bias):
3T – #32AWG_TIW
4
Figure 6 – Transformer Electrical Diagram.
7.2
电气规格
Electrical Strength
Primary Inductance
Resonant Frequency
Primary Leakage
Inductance
7.3
1 second, 60 Hz, from pins 1-8 to pins FL1-FL2.
Pins 1-8, all other windings open, measured at 132 kHz,
0.4 VRMS.
Pins 1-8, all other windings open.
Pins 1-8, with pins FL1-FL2 shorted, measured at 132 kHz,
0.4 VRMS.
3000 VAC
570 μH +5%
>1 MHz
<15 μH
材料
Item
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
Description
Core: RM7/I Ferroxcube 3F3 - RM07.
Bobbin: RM7/I, Vertical, 8 pins (4/4); PI P/N: 25-01014-00.
Magnet wire: #31 AWG (double coated).
Magnet wire: #30 AWG (double coated).
Magnet wire: #25 AWG – Triple Insulated Wire.
Cooper Foil Tape: 2 mils thick, 6.5 mm wide, 42 mm length, see figures and pictures below
for construction.
Tape: 3M 1298 Polyester Film, 7.0mm wide.
Tape: 3M 1298 Polyester Film, 11 mm wide.
Magnet wire: #32 AWG – Triple Insulated Wire.
Varnish.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
第14页（共70页）
11-Apr-14
7.4
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
结构图
4
FL3
WD6 (Bias): 3T – #32AWG_TIW
WD5 (2nd Secondary): 4.5T – 2 x #25AWG_TIW
FL2
1
1
WD4 (Shield): 1 turn of Copper Foil
WD3 (Primary): 59T – #31AWG (2 1/2 LAYERS)
8
6
7
WD2 (Bias): 18T – #30AWG
WD1 (1st Secondary): 4.5T – 2 x #25AWG_TIW
FL1
Figure 7 – Transformer Build Diagram.
Figure 8 – Copper Foil Tape.
This V notch indicates pin 1 side
8
6
1
7
3
5
2
4
Figure 9 – Pin Out of Bobbin RM7/I – 8 Pins(4/4).
第15页（共70页）
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
7.5
11-Apr-14
绕制
Bobbin
preparation
WD1
st
1 Secondary
Insulation
WD2
Bias
Insulation
WD3
Primary
Insulation
WD4
Shield
Insulation
WD5
nd
2 Secondary
Insulation
WD6
Bias
Insulation
Finish
Position the bobbin on the mandrel so pin side on the left hand side.
Winding direction is clockwise direction.
Take about 16” of wire item [5] and leave start end about 1/2 inch at pin 5
position for FL1, wind 4.5 bifilar turns of item from left to right and let the
remaining wires hang to the rightmost of the bobbin. Note that the remaining
wires will be used in WD6.
1 layer of tape item [7].
Start at pin 7, wind 18 turns of item [4] from left to right, spread the wires evenly
on the bobbin, and bring the wires back to the left to terminate at pin 6.
1 layer of tape item [7].
Start at pin 8, wind 22 turns of wire item [3] from left to right for the first layer,
then from right to left 22 turns for second layer, continue from left to right 15
turns for third layer, and terminate at pin 1. Place tape item [7] between each
layer.
1 layer of tape item [7].
Use copper tape item [6], start at pin 1wind 1 turn, should be overlapped and
tuck with tape item [7] when apply tape for insulation to avoid shorting.
1 layer of tape item [7].
Continue winding the remaining wires from WD1 for 4.5 turns and leave 1/2 inch
near pin 5 (FL2).
1 layer of tape item [7]
Start at pin 5 position, also leave ~1” of item [9] for FL3, wind 3 turns from left to
right, spread the wires evenly on the bobbin, and bring the wires back to the left
to terminate at pin 4.
2 layers of tape item [7].
Gap cores to get 570 μH inductance. Assemble and secure the cores with clips.
Dip varnish then dry.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
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第16页（共70页）
11-Apr-14
7.6
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
绕制图示
Position the bobbin on the
mandrel so pin side on the left
hand side.
Winding direction is clockwise
direction.
Bobbin Preparation
FL1
WD1
st
1 Secondary
第17页（共70页）
Take about 16” of wire item [5]
and leave start end about 1/2
inch at pin 5 position for FL1,
wind 4.5 bifilar turns of item
from left to right and let the
remaining wires hang to the
rightmost of the bobbin. Note
that the remaining wires will be
used in WD6.
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Insulation
WD2
Bias
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
11-Apr-14
1 layer of tape item [7].
Start at pin 7, wind 18 turns of
item [4] from left to right,
spread the wires evenly on the
bobbin, and bring the wires
back to the left to terminate at
pin 6.
第18页（共70页）
11-Apr-14
Insulation
WD3
Primary
第19页（共70页）
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
1 layer of tape item [7].
Start at pin 8, wind 22 turns of
wire item [3] from left to right
for the first layer, then from
right to left 22 turns for second
layer,
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Power Integrations, Inc.
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www.powerint.com
11-Apr-14
第20页（共70页）
11-Apr-14
WD3
Primary
(Cont’d)
第21页（共70页）
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
continue from left to right
15 turns for third layer, and
terminate at pin 1.
Place tape item [7] between
each layer.
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Insulation
WD4
Shield
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
11-Apr-14
1 layer of tape item [7].
Use copper tape item [6], start
at pin 1wind 1 turn, should be
overlapped and tuck with tape
item [7] when apply tape for
insulation to avoid shorting.
第22页（共70页）
11-Apr-14
Insulation
WD5
nd
2 Secondary
第23页（共70页）
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
1 layer of tape item [7].
Continue winding the
remaining wires from WD1 for
4.5 turns and leave 1/2 inch
near pin 5 (FL2).
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
FL1
FL2
1 layer of tape item [7].
Insulation
WD6
Bias
FL3
Power Integrations, Inc.
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Start at pin 5 position, also
leave ~1” of item [9] for FL3,
wind 3 turns from left to right,
spread the wires evenly on the
bobbin, and bring the wires
back to the left to terminate at
pin 4.
第24页（共70页）
11-Apr-14
Insulation
Finish
第25页（共70页）
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
2 layers of tape item [7].
Gap cores to get 570 μH
inductance. Assemble and
secure the cores with clips.
Dip varnish then dry.
Power Integrations
电话：+1 408 414 9200 传真：+1 408 414 9201
www.powerint.com
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
8 共模扼流圈规格(L3)
电气原理图
8.1
3
2
55T56T #31
- #26AWG
AWG
55T-- #31
56T
#26 AWG
AWG
4
1
Figure 10 – CMC Electrical Diagram.
电气规格
8.2
Inductance (LCM)
Leakage (LL)
Core Effective Inductance
8 mH (Min.)
80 μH (Max.) ±20%
4400 nH/N²
材料
8.3
Item
[1]
[2]
[3]
Description
Toroid Core: Shenzhen JLW T14*8*5.5C-JL10; Core, Toroidal, 14.35 mm O.D., 7.5 mm Th,
5.5 mm ID; PI P/N: 32-00286-00.
Magnet Wire: #31 AWG, Heavy Nyleze.
Center Barrier: FSHP-30, 6.6 mmX 8.1 mm.
绕制说明
•
•
•
Put item [3] in the middle of the core.
Use 4 ft of item [2], start at pin 1 wind 55 turns end at pin 4.
Do the same for another half of toroid, start at pin 2 and end at pin 3.
图示
separator
Winding direction
8.4
8.5
Pins 1-4 or 2-3. Measured at 100 kHz.
Pins 1-4 with pins 2-3 shorted or versa at 100 kHz.
1 43 2
Figure 11 – CMC Build Illustration.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
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第26页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
9 变压器设计表格
ACDC_TOPSwitchJX_101012;
Rev.1.6; Copyright Power
Integrations 2010
INPUT
INFO
ENTER APPLICATION VARIABLES
VACMIN
90
VACMAX
265
fL
50
VO
12.00
PO_AVG
24.00
PO_PEAK
Heatsink Type
External
Enclosure
n
Z
OUTPUT
30.00
External
UNIT
Volts
Volts
Hertz
Volts
Watts
Watts
Adapter
0.85
0.50
%/100
VB
40
Volts
tC
3.00
ms
CIN
56.0
ENTER TOPSWITCH-JX VARIABLES
56
uFarads
Power Out
Universal /
Peak
70 W / 112 W
ILIMITMIN_EXT
1.119
Amps
ILIMITMAX_EXT
1.845
Amps
TOPSwitch-JX
TOP268V
Chosen Device
KI
Frequency (F)=132kHz,
(H)=66kHz
TOP268V
0.37
F
F
fS
132000
Hertz
fSmin
119000
Hertz
fSmax
145000
Hertz
High Line Operating Mode
VOR
FF
135.00
VDS
Volts
10
Volts
VD
0.50
Volts
VDB
0.70
Volts
KP
0.75
PROTECTION FEATURES
LINE SENSING
VUV_STARTUP
101
Volts
VOV_SHUTDOWN
490
Volts
第27页（共70页）
TOP_JX_101012: TOPSwitch-JX
Continuous/Discontinuous
Flyback Transformer Design
Spreadsheet
Minimum AC Input Voltage
Maximum AC Input Voltage
AC Mains Frequency
Output Voltage (main)
Average Output Power
Peak Output Power
Heatsink Type
Open Frame enclosure assumes
sufficient airflow, while Adapter
means a sealed enclosure.
Efficiency Estimate
Loss allocation factor
Bias Voltage - Verify that VB is >
8 V at no load and VMAX
Bridge Rectifier Conduction Time
Estimate
Input Filter Capacitor
115 Doubled/230V
105W
External Ilimit reduction factor
(KI=1.0 for default ILIMIT, KI <1.0
for lower ILIMIT)
Use 1% resistor in setting external
ILIMIT
Use 1% resistor in setting external
ILIMIT. Includes tolerance over
temperature. See Fig 37 of
datasheet
Select 'H' for Half frequency 66kHz, or 'F' for Full frequency 132kHz
TOPSwitch-JX Switching
Frequency: Choose between
132 kHz and 66 kHz
TOPSwitch-JX Minimum Switching
Frequency
TOPSwitch-JX Maximum Switching
Frequency
Full Frequency, Jitter enabled
Reflected Output Voltage
TOPSwitch on-state Drain to
Source Voltage
Output Winding Diode Forward
Voltage Drop
Bias Winding Diode Forward
Voltage Drop
Ripple to Peak Current Ratio (0.3 <
KRP < 1.0 : 1.0< KDP<6.0)
V pin functionality
Minimum DC Bus Voltage at which
the power supply will start-up
Typical DC Bus Voltage at which
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
RLS
11-Apr-14
4.4
M-ohms
VZ
47
Volts
RZ
5.1
k-ohms
power supply will shut-down (Max)
Use two standard, 2.2 M-Ohm, 5%
resistors in series for line sense
functionality.
OUTPUT OVERVOLTAGE
OVERLOAD POWER LIMITING
Overload Current Ratio at VMAX
1.2
Overload Current Ratio at VMIN
ILIMIT_EXT_VMIN
ILIMIT_EXT_VMAX
RIL
1.07
1.03
1.05
15.49
A
A
k-ohms
RPL
N/A
M-ohms
ENTER TRANSFORMER CORE/CONSTRUCTION VARIABLES
Core Type
EFD20
RM7
Custom Core (Optional)
RM7
Bobbin
AE
LE
0.4400
3.0000
#N/A
0.44
3
P/N:
cm^2
cm
AL
2700.0
2700
nH/T^2
BW
6.9
6.9
mm
M
mm
L
4.00
NS
9
DC INPUT VOLTAGE PARAMETERS
VMIN
VMAX
CURRENT WAVEFORM SHAPE PARAMETERS
9
86
375
Volts
Volts
DMAX
0.64
IAVG
0.41
Amps
IP
1.03
Amps
IR
0.77
Amps
IRMS
0.54
Amps
TRANSFORMER PRIMARY DESIGN PARAMETERS
LP
LP Tolerance
3
NP
NB
ALG
572
3
59
18
163
uHenries
BM
2253
Gauss
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
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nH/T^2
Zener Diode rated voltage for
Output Overvoltage shutdown
protection
Output OVP resistor. For latching
shutdown use 20 ohm resistor
instead
X pin functionality
Enter the desired margin to current
limit at VMAX. A value of 1.2
indicates that the current limit
should be 20% higher than peak
primary current at VMAX
Margin to current limit at low line.
Peak primary Current at VMIN
Peak Primary Current at VMAX
Current limit/Power Limiting resistor.
Resistor not required. Use RIL
resistor only
Core Type
If Custom core is used - Enter Part
number here
#N/A
Core Effective Cross Sectional Area
Core Effective Path Length
Ungapped Core Effective
Inductance
Bobbin Physical Winding Width
Safety Margin Width (Half the
Primary to Secondary Creepage
Distance)
Number of Primary Layers
Number of Secondary Turns
Minimum DC Input Voltage
Maximum DC Input Voltage
Maximum Duty Cycle (calculated at
PO_PEAK)
Average Primary Current
(calculated at average output
power)
Peak Primary Current (calculated at
Peak output power)
Primary Ripple Current (calculated
at average output power)
Primary RMS Current (calculated at
average output power)
Primary Inductance
Tolerance of Primary Inductance
Primary Winding Number of Turns
Bias Winding Number of Turns
Gapped Core Effective Inductance
Maximum Flux Density at PO, VMIN
(BM<3000)
第28页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
BP
4168
Gauss
BAC
845
Gauss
ur
1465
LG
BWE
0.32
27.6
mm
mm
OD
0.47
mm
INS
0.06
mm
DIA
0.40
mm
AWG
27
AWG
CM
203
Cmils
CMA
374
Cmils/Amp
Primary Current Density (J)
5.32
Amps/mm^2
TRANSFORMER SECONDARY DESIGN PARAMETERS (SINGLE OUTPUT EQUIVALENT)
Lumped parameters
ISP
6.76
Amps
ISRMS
2.68
Amps
IO_PEAK
1.50
Amps
IO
1.50
Amps
IRIPPLE
2.23
Amps
CMS
537
Cmils
AWGS
22
AWG
DIAS
0.65
mm
ODS
0.77
mm
INSS
0.06
mm
VDRAIN
638
Volts
PIVS
77
Volts
PIVB
153
Volts
Peak Flux Density (BP<4200) at
ILIMITMAX and LP_MAX. Note:
Recommended values for adapters
and external power supplies
<=3600 Gauss
AC Flux Density for Core Loss
Curves (0.5 X Peak to Peak)
Relative Permeability of Ungapped
Core
Gap Length (Lg > 0.1 mm)
Effective Bobbin Width
Maximum Primary Wire Diameter
including insulation
Estimated Total Insulation
Thickness (= 2 * film thickness)
Bare conductor diameter
Primary Wire Gauge (Rounded to
next smaller standard AWG value)
Bare conductor effective area in
circular mils
Primary Winding Current Capacity
(200 < CMA < 500)
Primary Winding Current density
(3.8 < J < 9.75)
Peak Secondary Current
Secondary RMS Current
Secondary Peak Output Current
Average Power Supply Output
Current
Output Capacitor RMS Ripple
Current
Secondary Bare Conductor
minimum circular mils
Secondary Wire Gauge (Rounded
up to next larger standard AWG
value)
Secondary Minimum Bare
Conductor Diameter
Secondary Maximum Outside
Diameter for Triple Insulated Wire
Maximum Secondary Insulation
Wall Thickness
VOLTAGE STRESS PARAMETERS
TRANSFORMER SECONDARY DESIGN PARAMETERS (MULTIPLE OUTPUTS)
1st output
VO1
20
IO1_AVG
1.50
PO1_AVG
30.00
VD1
0.5
NS1
9.00
ISRMS1
2.684
Amps
IRIPPLE1
Amps
第29页（共70页）
2.23
Volts
Amps
Watts
Volts
Maximum Drain Voltage Estimate
(Includes Effect of Leakage
Inductance)
Output Rectifier Maximum Peak
Inverse Voltage
Bias Rectifier Maximum Peak
Inverse Voltage
Output Voltage
Average DC Output Current
Average Output Power
Output Diode Forward Voltage Drop
Output Winding Number of Turns
Output Winding RMS Current
Output Capacitor RMS Ripple
Current
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11-Apr-14
PIVS1
77
Volts
CMS1
537
Cmils
AWGS1
22
AWG
DIAS1
0.65
mm
ODS1
0.77
mm
2nd output
VO2
IO2_AVG
PO2_AVG
VD2
NS2
ISRMS2
23.00
0.01
Volts
Amps
Watts
Volts
0.23
0.7
10.40
0.018
Amps
0.01
Amps
PIVS2
89
Volts
CMS2
4
Cmils
AWGS2
44
AWG
DIAS2
0.05
mm
ODS2
0.66
mm
IRIPPLE2
3rd output
VO3
IO3_AVG
PO3_AVG
VD3
NS3
ISRMS3
0.00
0.7
0.31
0.000
Amps
IRIPPLE3
0.00
Amps
PIVS3
2
Volts
CMS3
0
Cmils
AWGS3
N/A
AWG
DIAS3
N/A
mm
ODS3
N/A
mm
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Volts
Amps
Watts
Volts
Output Rectifier Maximum Peak
Inverse Voltage
Output Winding Bare Conductor
minimum circular mils
Wire Gauge (Rounded up to next
larger standard AWG value)
Minimum Bare Conductor Diameter
Maximum Outside Diameter for
Triple Insulated Wire
Output Voltage
Average DC Output Current
Average Output Power
Output Diode Forward Voltage Drop
Output Winding Number of Turns
Output Winding RMS Current
Output Capacitor RMS Ripple
Current
Output Rectifier Maximum Peak
Inverse Voltage
Output Winding Bare Conductor
minimum circular mils
Wire Gauge (Rounded up to next
larger standard AWG value)
Minimum Bare Conductor Diameter
Maximum Outside Diameter for
Triple Insulated Wire
Output Voltage
Average DC Output Current
Average Output Power
Output Diode Forward Voltage Drop
Output Winding Number of Turns
Output Winding RMS Current
Output Capacitor RMS Ripple
Current
Output Rectifier Maximum Peak
Inverse Voltage
Output Winding Bare Conductor
minimum circular mils
Wire Gauge (Rounded up to next
larger standard AWG value)
Minimum Bare Conductor Diameter
Maximum Outside Diameter for
Triple Insulated Wire
第30页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
10 U1散热片装配
The following mechanical drawings are for the custom mechanical designs used in this
power supply.
10.1 散热片加工图
Figure 12 – Heat Sink Fabrication Drawing.
第31页（共70页）
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11-Apr-14
10.2 散热片装配图
Figure 13 – Heat Sink Assembly Drawing.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
10.3 散热片和U1装配图
Figure 14 – Heat Sink and U1 Assembly Drawing.
第33页（共70页）
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11 性能数据
All tests were performed at room temperature with 90 V / 50 Hz, 115 V / 60 Hz,
230 V / 50 Hz, and 265 V / 50 Hz line input voltages and corresponding frequencies
unless otherwise noted. The power supply was put in a plastic case and allowed to warm
up for 30 minutes at full load. The input was provided via a 1 meter AC cable. The output
was measured at the USB connector mounted on the board.
11.1 满载效率
1.00
5V
9V
12 V
0.95
Efficiency (%)
0.90
0.85
0.80
0.75
0.70
0.65
80
100
120
140
160
180
200
220
240
260
280
Input Voltage (VAC)
Figure 15 – Efficiency vs. Input Voltage, Room Temperature.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11.2 带载模式效率
100
90
80
Efficiency (%)
70
60
50
40
30
20
90 V
115 V
230 V
265 V
10
0
0
10
20
30
40
50
60
70
80
90
Load (%)
Figure 16 – Efficiency vs. Load 5 V.
第35页（共70页）
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100
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
100
90
80
Efficiency (%)
70
60
50
40
30
20
90 V
115 V
230 V
265 V
10
0
0
10
20
30
40
50
60
70
80
90
100
Load (%)
Figure 17 – Efficienc vs. Load 9 V.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
100
90
80
Efficiency (%)
70
60
50
40
30
20
90 V
115 V
230 V
265 V
10
0
0
10
20
30
40
50
60
70
80
90
Load (%)
Figure 18 – Efficiency vs. Load 12 V.
Percent of Full Load
(%)
100
90
80
75
70
60
50
40
30
25
20
10
Average
US EISA (2007) Requirement
ENERGY STAR EPS v2, EC CoC v4, EUP Tier 2
第37页（共70页）
12 V Efficiency (%)
115 VAC
230 VAC
85.21
84.96
85.39
85.28
86.30
85.44
85.75
85.85
86.37
85.43
86.09
85.73
86.27
85.49
86.05
85.27
85.95
84.90
85.73
84.54
85.31
83.76
82.00
78.38
85.7
85.2
79
82
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11-Apr-14
11.3 能效要求
The external power supply requirements below all require meeting active mode efficiency
and no-load input power limits. Minimum active mode efficiency is defined as the average
efficiency of 25, 50, 75 and 100% of output current (based on the nameplate output
current rating).
For adapters that are single input voltage only then the measurement is made at the
rated single nominal input voltage (115 VAC or 230 VAC), for universal input adapters the
measurement is made at both nominal input voltages (115 VAC and 230 VAC).
To meet the standard the measured average efficiency (or efficiencies for universal input
supplies) must be greater than or equal to the efficiency specified by the standard.
The test method can be found here:
http://www.energystar.gov/ia/partners/prod_development/downloads/power_supplies/EP
SupplyEffic_TestMethod_0804.pdf
For the latest up to date information please visit the PI Green Room:
http://www.powerint.com/greenroom/regulations.htm
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第38页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11.3.1 美国2007年《能源独立和安全法案》
This legislation mandates all single output single output adapters, including those
provided with products, manufactured on or after July 1st, 2008 must meet minimum
active mode efficiency and no load input power limits.
Active Mode Efficiency Standard Models
Nameplate Output (PO)
<1W
1
W
to ≤ 51 W
≥
> 51 W
Minimum Efficiency in Active Mode of Operation
0.5 × PO
0.09 × ln (PO) + 0.5
0.85
Ln = natural logarithm
No-load Energy Consumption
Nameplate Output (PO)
All
Maximum Power for No-load AC-DC EPS
≤ 0.5 W
This requirement supersedes the legislation from individual US States (for example CEC
in California).
11.3.2 能源之星外部电源规范2.0版
This specification takes effect on November 1st, 2008.
Active Mode Efficiency Standard Models
Nameplate Output (PO)
≤1W
> 1 W to ≤ 49 W
> 49 W
Minimum Efficiency in Active Mode of Operation
0.48 × PO + 0.14
0.0626 × ln (PO) + 0.622
0.87
ln = natural logarithm
Active Mode Efficiency Low Voltage Models (VO<6 V and IO ≥ 550 mA)
Nameplate Output (PO)
≤1W
> 1 W to ≤ 49 W
> 49 W
Minimum Efficiency in Active Mode of Operation
0.497 × PO + 0.067
0.075 × ln (PO) + 0.561
0.86
ln = natural logarithm
No-load Energy Consumption (both models)
Nameplate Output (PO)
0 to < 50 W
≥ 50 W to ≤ 250 W
第39页（共70页）
Maximum Power for No-load AC-DC EPS
≤ 0.3 W
≤ 0.5 W
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11.4 空载输入功率
Test results shows that the toggle board affects the no load input power, and thus on no
load data for 5 V without toggle board is shown in this report.
180
No-load Input Power (mW)
160
140
120
100
80
60
40
80
100
120
140
160
180
200
220
240
260
280
Input Voltage (VAC)
Figure 19 – No-Load Input Power at 5 V and Without Toggle Board.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11.5 CV/CC
6.0
90 V
115 V
230 V
265 V
Output Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Load (A)
Figure 20 – 5 V CV/CC, Room Temperature.
第41页（共70页）
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3.0
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
10.0
90 V
115 V
230 V
265 V
Output Voltage (V)
8.0
6.0
4.0
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Load (A)
Figure 21 – 9 V CV/CC, Room Temperature.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
14.0
90 V
115 V
230 V
265 V
12.0
Output Votlage (V)
10.0
8.0
6.0
4.0
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Load (A)
Figure 22 – 12 V CV/CC, Room Temperature.
第43页（共70页）
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3.0
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
12 热性能
At room ambient, thermal performance was tested with12 V, 2 A load and 12 V, 1.5 A
load.
Figure 23 – Thermal at 90 VAC 12 V, 2 A.
Figure 24 – Thermal at 265 VAC, 2 A.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Figure 25 – Thermal at 90 VAC 12 V, 1.5 A.
Figure 26 – Thermal at 265 VAC, 1.5 A.
第45页（共70页）
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13 波形
13.1 漏极电压和电流，正常工作
Figure 27 – 90 VAC, 12 V, 2 A.
Upper: VDRAIN, 100 V / div.
Lower: IDRAIN, 0.5 A, 2 μs / div.
Figure 28 – 265 VAC, 12 V, 2 A.
Upper: VDRAIN, 200 V / div.
Lower: IDRAIN, 0.5 A, 2 μs / div.
13.2 输出电压启动特征
13.2.1 5 V、2 A CR负载启动
Figure 29 – Start-up Profile, 90 VAC.
5 V, 2 A CR Load.
Upper: VOUT, 1 V / div.
Lower: IOUT, 0.5 A, 5 ms / div.
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Figure 30 – Start-up Profile, 265 VAC.
5 V, 2 A CR Load.
Upper: VOUT, 1 V / div.
Lower: IOUT, 0.5 A, 5 ms / div.
第46页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.2.2 5 V、0.2 A CR负载启动
Figure 31 – Start-up Profile, 90 VAC.
5 V, 0.2 A CR Load.
Upper: VOUT, 1 V / div.
Lower: IOUT, 0.5 A, 5 ms / div.
第47页（共70页）
Figure 32 – Start-up Profile, 265 VAC.
5 V, 0.2 A CR Load.
Upper: VOUT, 1 V / div.
Lower: IOUT, 0.5 A, 5 ms / div.
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13.3 漏极电压和电流启动特征
Figure 33 – 90 VAC, 5 V, 2 A.
Upper: VDRAIN, 100 V / div.
Lower: IDRAIN, 0.5 A, 5 ms / div.
Figure 34 – 265 VAC, 5 V, 2 A.
Upper: VDRAIN, 200 V / div.
Lower: IDRAIN, 0.5 A, 5 ms / div.
13.4 输出二极管反向峰值电压
Figure 35 – 265 VAC, 12 V Output, 2 A Load.
VDIODE, 20 V, 2 μs / div.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.5 负载瞬态响应
In the figures shown below, signal averaging was used to better enable viewing the load
transient response. The oscilloscope was triggered using the load current step as a
trigger source. Since the output switching and line frequency occur essentially at random
with respect to the load transient, contributions to the output ripple from these sources
will average out, leaving the contribution only from the load step response. Note the DC
shifts are due to the output cable resistance.
13.5.1 12 V输出；0.5 A - 1.75 A - 0.5 A负载阶跃
Figure 36 – Transient Response, 90 VAC,
318 mVPK-PK.
Upper: VRIPPLE, 100 mV / div.
Lower: ILOAD, 1 A, 10 ms / div.
Figure 37 – Transient Response, 115 VAC,
275 mVPK-PK.
Upper: VRIPPLE, 100 mV / div.
Lower: ILOAD, 1 A, 10 ms / div.
Figure 38 – Transient Response, 230 VAC,
160 mVPK-PK.
Upper: VOUT, 100 mV / div.
Lower: ILOAD, 1 A, 5 ms / div.
Figure 39 – Transient Response, 265 VAC,
148 mVPK-PK.
Upper: VOUT, 100 mV / div.
Lower: ILOAD, 1 A, 5 ms / div.
第49页（共70页）
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13.5.2 5 V输出；0.5 A - 1.75 A - 0.5 A负载阶跃
Figure 40 – Transient Response, 90 VAC,
172 mVPK-PK.
Upper: VRIPPLE, 100 mV / div.
Lower: ILOAD, 1 A, 10 ms / div.
Figure 41 – Transient Response, 115 VAC,
154 mVPK-PK.
Upper: VRIPPLE, 100 mV / div.
Lower: ILOAD, 1 A, 10 ms / div.
Figure 42 – Transient Response, 230 VAC,
153 mVPK-PK.
Upper: VOUT,100 mV / div.
Lower: ILOAD, 1 A, 10 ms / div.
Figure 43 – Transient Response, 265 VAC,
147 mVPK-PK.
Upper: VOUT, 100 mV / div.
Lower: ILOAD, 1 A, 5 ms / div.
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11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.6 输出纹波测量
13.6.1 纹波测量方法
For DC output ripple measurements, a modified oscilloscope test probe must be utilized
in order to reduce spurious signals due to pick up. Details of the probe modification are
provided in the figures below.
The 4987BA probe adapter is affixed with two capacitors tied in parallel across the probe
tip. The capacitors include one (1) 0.1 μF / 50 V ceramic type and one (1) 10.0 μF / 50 V
aluminum electrolytic. The aluminum electrolytic type capacitor is polarized, so proper
polarity across DC outputs must be maintained (see below).
Probe Ground
Probe Tip
Figure 44 – Oscilloscope Probe Prepared for Ripple Measurement. (End Cap and Ground Lead Removed)
Figure 45 – Oscilloscope Probe with Probe Master (www.probemaster.com) 4987A BNC Adapter.
(Modified with wires for ripple measurement, and two parallel decoupling capacitors added)
第51页（共70页）
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13.6.2 PCB的测量数据
Figure 46 – Ripple, 90 VAC, 12 V, 2 A.
91.5 mVPK-PK.
2 ms, 20 mV / div.
Figure 47 – Ripple, 115 VAC, 12 V, 2 A.
73 mVPK-PK.
2 ms, 20 mV / div.
Figure 48 – Ripple, 230 VAC, 12 V, 2 A.
71 mVPK-PK.
2 ms, 20 mV / div.
Figure 49 – Ripple, 265 VAC, 12 V, 2 A.
73 mVPK-PK.
2 ms, 20 mV / div.
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Figure 50 – Ripple, 90 VAC, 5 V, 2 A.
65 mVPK-PK.
2 ms, 20 mV / div.
Figure 51 – Ripple, 115 VAC, 5 V, 2 A.
62.5 mVPK-PK.
2 ms, 50 mV / div.
Figure 52 – Ripple, 230 VAC, 5 V, 2 A.
73 mVPK-PK.
2 ms, 50 mV / div.
Figure 53 – Ripple, 265 VAC, 5 V, 2 A.
97 mVPK-PK.
2 ms, 50 mV / div.
第53页（共70页）
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13.7 输出电压切换
13.7.1 满载2 A时输出向上切换
Figure 54 – VOUT from 5 V to 9 V, 90 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 55 – VOUT from 5 V to 12 V, 90 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 56 – VOUT from 5 V to 9 V, 265 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 57 – VOUT from 5 V to 12 V, 265 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Power Integrations, Inc.
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第54页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.7.2 半载1 A时输出向上切换
Figure 58 – VOUT from 5 V to 9 V, 90 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 59 – VOUT from 5 V to 12 V, 90 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 60 – VOUT from 5 V to 9 V, 265 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 61 – VOUT from 5 V to 12 V, 265 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
第55页（共70页）
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
13.7.3 轻载0.15 A时输出向上切换
Figure 62 – VOUT from 5 V to 9 V, 90 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 63 – VOUT from 5 V to 12 V, 90 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 64 – VOUT from 5 V to 9 V, 265 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 65 – VOUT from 5 V to 12 V, 265 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Power Integrations, Inc.
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第56页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.7.4 满载2 A时电压向下切换
Figure 66 – VOUT from 9 V to 5 V, 90 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 67 – VOUT from 12 V to 5 V, 90 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 68 – VOUT from 9 V to 5 V, 265 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 69 – VOUT from 12 V to 5 V, 265 VAC 2 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
第57页（共70页）
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
13.7.5 半载1 A时电压向下切换
Figure 70 – VOUT from 9 V to 5 V, 90 VAC 1 A.
Upper: Vo, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 71 – VOUT from 12 V to 5 V, 90 VAC 1A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 72 – VOUT from 9 V to 5 V, 265 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 73 – VOUT from 12 V to 5 V, 265 VAC 1 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Power Integrations, Inc.
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第58页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.7.6 轻载0.15 A时电压向下切换
Figure 74 – VOUT from 9 V to 5 V, 90 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 75 – VOUT from 12 V to 5 V, 90 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 76 – VOUT from 9 V to 5 V, 265 VAC 0.15 A.
Upper: VOUT, 2 V / div.
Lower: IOUT, 1 A, 10 ms / div.
Figure 77 – VOUT from 12 V to 5 V, 265 VAC 0.15 A.
Upper: VOUT, 2V / div.
Lower: IOUT, 1 A, 10 ms / div.
第59页（共70页）
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
13.8 USB断开后波形
13.8.1 9 V USB断开后波形
Figure 78 – 9 V, 115 VAC USB Unplugged.
VOUT, 2 V, 20 ms / div.
Figure 79 – 9 V, 230 VAC USB Unplugged.
VOUT, 2 V, 20 ms / div.
13.8.2 12 V USB断开后波形
Figure 80 – 12 V, 115 VAC USB Unplugged.
VOUT, 2 V, 20 ms / div.
Power Integrations, Inc.
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Figure 81 – 12 V, 230 VAC USB Unplugged.
VOUT, 2 V, 20 ms / div.
第60页（共70页）
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
13.9 控制环路测量
13.9.1 12 V环路测试
Half Load
Full Load
Input
(VAC)
Cross Over Frequency
(kHz)
Phase Margin
(º)
Cross Over Frequency
(kHz)
Phase Margin
(º)
115
3.4
83
2.95
80
230
2.5
82
2.2
78
13.9.2 5 V环路测试
Half Load
Full Load
Input
(VAC)
Cross Over Frequency
(kHz)
Phase Margin
(º)
Cross Over Frequency
(kHz)
Phase Margin
(º)
115
4
86
3.8
75
230
7.5
85
8
62
第61页（共70页）
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
14 传导EMI
Equipment used: Rohde and Schwarz ESPI3 (PN: m1142.8007.03 / EMI Test Receiver
9 kHz to 3 GHz).
Figure 82 – Conducted EMI, 2 A Resistor Load, 115 VAC, 60 Hz, 5 V Output. Output Connected to PE.
Power Integrations, Inc.
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第62页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
Figure 83 – Conducted EMI, 2A Resistor Load, 230 VAC, 60 Hz, 5 V Output. Output Connected to PE.
第63页（共70页）
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
11-Apr-14
Figure 84 – Conducted EMI, 2 A Resistor Load, 115 VAC, 60 Hz, 12 V output. Output Connected to PE.
Figure 85 – Conducted EMI, 2 A Resistor Load, 230 VAC, 60 Hz, 12 V Output. Output Connected to PE.
Power Integrations, Inc.
电话：+1 408 414 9200 传真：+1 408 414 9201
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第64页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
15 附录A – 特别装配说明
15.1 材料
Item
[1]
[2]
[3]
[4]
Description
RTV 670810, GE, 66-00038-00.
RTV Application Gun.
Teflon Tubing, 66-00132-00.
Double Sided Thermal Tape, 60-00024-00.
15.2 变压器安装(T1)
Install and solder T1 primary side pins.
FL1, FL3
Locate the FL1 tagged secondary lead
and insert into the designated FL1 board
reference and solder.
Locate the FL3 tagged bias lead and
insert into the designated FL3 board
reference and solder.
FL2
第65页（共70页）
Locate the FL2 lead and insert into the
FL2 board reference. Apply solder.
Power Integrations
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15.3 散热片安装
Cut Thermal
Tape
Cut a piece of double sided thermal tape
to .50” x.50”.
PI # 60-00042-00
Apply Thermal
Tape
Apply the termal tape to the bottom side
of the heat sink.
Remove Tape
Backing
Remove the backing from thermal tape.
Install Heat Sink
Install the heatsink and apply enough
pressure to make sure that it sits
securely on top of the device.
Solder both heat sink pins.
Power Integrations, Inc.
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第66页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
15.4 电容安装(C2)
Cut Teflon
Tubing
Cut two lengths of teflon tubing to .350”
and slide over each of the leads of C2.
Install C2
Locate the C2 board reference and
solder C2 in between the fins of the heat
sink.
Apply RTV
PI # 66-00038-00
Check Spacing
第67页（共70页）
Apply RTV to C2 making sure that there
is a slight gap between the body of the
capacitor and the heat sink.
Check the gap between the capacitor
and the heat sink. The capacitor should
not have any contact with the heat sink.
Power Integrations
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DER-381：兼容高压专用充电(HVDCP)的24 W适配器
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15.5 涂覆RTV（C1和 L3）
Apply RTV
Apply RTV to secure L3 to C1.
PI # 66-00038-00
Check
Alignment
Power Integrations, Inc.
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Make sure that L3 is straight and does
not lean outside the boundary of the
circuit board.
第68页（共70页）
11-Apr-14
DER-381：兼容高压专用充电(HVDCP)的24 W适配器
16 版本历史
Date
08-Oct-13
31-Mar-14
11-Apr-14
Author
PL
KM
KM
第69页（共70页）
Revision
1.0
1.1
1.2
Description & Changes
Initial release
Added transformer supplier
Corrected schematic
Reviewed
Apps & Mktg
Power Integrations
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11-Apr-14
有关最新产品信息，请访问：www.powerint.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or
manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit
described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL
WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY,
FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits’ external to the
products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent
applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at
www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at
http://www.powerint.com/ip.htm.
The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS,
HiperTFS, HiperLCS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of
Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2013 Power
Integrations, Inc.
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第70页（共70页）