Preliminary Datasheet BCR12LM-14LD R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Triac Medium Power Use Features The Product guaranteed maximum junction temperature 150C Insulated Type Planar Type UL Recognized : File No. E223904 IT (RMS) : 12 A VDRM : 700 V IFGTI, IRGTI, IRGT III : 50 mA Viso : 1800V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Repetitive peak off-state voltage Symbol Note1 VDRM Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDSM Voltage class 14 800 700 800 Parameter RMS on-state current Symbol IT (RMS) Ratings 12 Unit A Surge on-state current ITSM 72 A I2 t 21.6 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Unit Conditions V V V Tj = 125C Tj = 150C Conditions Commercial frequency, sine full wave 360 conduction, Tc = 77C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1 T2 G terminal to case Page 1 of 7 BCR12LM-14LD Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.75 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 20 A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 50 50 50 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 — — — — — — 4.3 — V V C/W V/s Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C 1 — — V/s Tj = 150°C Gate non-trigger voltage Thermal resistance Rth (j-c) Critical-rate of rise of off-state Note4 commutation voltage (dv/dt)c Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of decay of off-state commutation voltage are shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 6 A/ms 3. Peak off-state voltage VD = 400 V R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR12LM-14LD Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 80 Tj = 150°C 101 Tj = 25°C 100 10−1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 50 40 30 20 10 100 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10 V PGM = 5 W 101 PG(AV) = 0.5 W VGT = 1.5 V IGM = 2 A 100 IFGT I IRGT I IRGT III VGD = 0.2 V 10−1 1 10 102 103 104 103 Typical Example IRGT III 102 IFGT I IRGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 60 On-State Voltage (V) 102 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 70 0 4.0 0 40 80 120 Junction Temperature (°C) R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) 102 102 5 103 104 100 101 4 5 2 1 0 –1 10 102 Conduction Time (Cycles at 60 Hz) Page 3 of 7 BCR12LM-14LD Preliminary 102 101 100 10−1 101 102 104 16 360° Conduction Resistive, inductive loads 12 8 4 0 105 0 2 4 6 8 10 12 14 16 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 160 Ambient Temperature (°C) Case Temperature (°C) 103 On-State Power Dissipation (W) 20 No Fins 160 140 All fins are black painted aluminum and greased 120 120 × 120 × t2.3 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 10 12 14 0 0 16 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 103 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 Typical Example 105 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR12LM-14LD Preliminary Latching Current vs. Junction Temperature 103 103 Typical Example Latching Current (mA) 102 0 40 80 120 101 T2–, G– Typical Example T2+, G+ Typical Example 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –40 T2+, G– Typical Example 102 100 –40 160 0 40 80 120 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 101 –40 Distribution 160 140 Typical Example Tj = 125°C 120 III Quadrant 100 80 I Quadrant 60 40 20 0 101 102 103 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 102 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Minimum Value 101 I Quadrant III Quadrant Typical Example Tj = 125°C, IT = 4A τ = 500μs, VD = 200V, f = 3Hz 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR12LM-14LD Preliminary Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 3 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Commutation Characteristics (Tj=150°C) III Quadrant Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 I Quadrant 3 Minimum Value 100 Typical Example Tj = 150°C, IT = 4A, τ = 500µs VD = 200V, f = 3Hz 3 0 10 101 102 Rate of Decay of On-State Commutating Current (A/ms) 103 Typical Example IFGT I IRGT I IRGT III 102 101 100 101 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V A 6V 330Ω V V 330Ω Test Procedure II Test Procedure I 6Ω A 6V V 330Ω Test Procedure III R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Page 6 of 7 BCR12LM-14LD Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number BCR12LM-14LD#B00 Packing Tube Quantity 50 pcs. Remark Straight type Note : Please confirm the specification about the shipping in detail. R07DS0571EJ0100 Rev.1.00 Dec 20, 2011 Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1