2SC3380 Silicon NPN Triple Diffused REJ03G0713-0300 (Previous ADE-208-1082A) Rev.3.00 Aug.10.2005 Application • High frequency high voltage amplifier • High voltage switch Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is “AS”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC 1 PC* Tj Tstg 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Rev.3.00 Aug 10, 2005 page 1 of 5 Ratings 300 300 5 100 1 150 –55 to +150 Unit V V V mA W °C °C 2SC3380 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Rev.3.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz 2SC3380 Main Characteristics Typical Output Characteristics 1.0 1.2 Collector Current IC (mA) Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 0.8 0.4 12 0.8 10 0.6 9 8 0.4 4 0.2 2 µA IB = 0 50 0 100 150 0 0.4 0.8 1.2 1.6 2.0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 100 DC Current Transfer Ratio hFE 50 Collector Current IC (mA) 14 VCE = 20 V Ta = 25°C 40 30 20 10 VCE = 20 V 10 V 30 Pulse Ta = 25°C 10 0.2 0.6 0.4 0.8 10 30 Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current Pulse IC = 10 IB Ta = 25°C 1.0 0.3 0.1 1 3 Base to Emitter Voltage VBE (V) 10 3 1 1.0 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 0 3 10 30 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 100 100 100 80 Pulse VCE = 20 V 60 40 20 0 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 2SC3380 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.3.00 Aug 10, 2005 page 4 of 5 2SC3380 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SC3380ASTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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