Cree CPW2-0600S006 Silicon Carbide Schottky Diode

CPW2-0650-S006B–Silicon Carbide Schottky Diode Chip
Z-Rec™ Rectifier
VRRM = 650 V
IF(AVG)= 6 A
Features
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Qc Chip Outline
= 16 nC
650-Volt Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Part Number
Anode
Cathode
Package
Marking
CPW2-0650-S006B
Al
Ni/Ag
Sawn on Foil
Wafer # on Foil
Maximum Ratings
6B Rev. W2-0650-S00
Datasheet: CP
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
6
A
TJ=175˚C
41
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
1
TC=25˚C, tP=10 µs, Pulse
1
IF(AVG)
Average Forward Current
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
200
A
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Subject to change without notice.
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1
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
1.6
1.9
1.8
2.4
V
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
IR
Reverse Current
12
24
60
220
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
QC
Total Capacitive Charge
16
nC
VR = 650 V, IF = 6 A
di/dt = 500 A/μs
TJ = 25°C
C
Total Capacitance
294
27
26
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. Assumes θJC Thermal Resistance of 1.6˚C/W or less
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
1.55 x 1.55
mm
Anode Pad Size
1.29 x 1.29
mm
Anode Pad Opening
1.08 x 1.08
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
4
μm
1.8
μm
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
2
CPW2-0650-S006B Rev. -
Polyimide
Note
Chip Dimensions
A
symbol
B
A
dimension
mm
inch
A
1.55
0.061
B
1.29
0.051
B
Part Number
Anode
Cathode
Package
Marking
CPW2-0650-S006B
Al
Ni/Ag
Sawn on Foil
Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due
to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These
die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend
that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2
– 3 weeks of delivery to assure 100% release of all die without issues.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
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CPW2-0650-S006B Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power