CPW4-1200-S002B Silicon Carbide Schottky Diode Chip Z-Rec Rectifier ® Features • • • • • • • VRRM = 1200 V IF(AVG) = 2A Q c Chip Outline = 11 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Part Number Die Size Anode Cathode CPW4-1200-S002B 1.18 x 1.18 mm2 Al Ni/Ag Maximum Ratings 4-1200-S Datasheet: CPW 002 Rev. A Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Blocking Voltage 1200 V IF Continuous Forward Current 2 A TJ=175˚C 1 IFRM Repetitive Peak Forward Surge Current 13 8.4 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse 1 IFSM Non-Repetitive Forward Surge Current 19 16.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse 1 IF,Max Non-Repetitive Peak Forward Current 200 160 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse -55 to +175 ˚C 325 ˚C TJ , Tstg TProc Operating Junction and Storage Temperature Maximum Processing Temperature 10 min. maximum 1. Assumes RθJC Thermal Resistance of 2.5˚C/W or less Subject to change without notice. www.cree.com/power 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.4 1.9 1.8 3 V IF = 2 A TJ=25°C IF = 2 A TJ=175°C Fig. 1 IR Reverse Current 10 40 50 150 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 11 nC VR = 800 V, IF = 2A di/dt = 200 A/μs TJ = 25°C Fig. 3 C Total Capacitance 167 11 8 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 4 Mechanical Parameters Parameter Typ. Unit 1.18 x 1.18 mm Anode Pad Size 0.895 x 0.895 mm Anode Pad Opening 0.615 x 0.615 mm Thickness 377 ± 10% μm Wafer Size 100 mm 4 μm 1.4 μm Die Size Anode Metalization (Al) Cathode Metalization (Ni/Ag) Frontside Passivation 2 Note CPW4-1200-S002 Rev. A Polyimide Typical Characteristics 4 1 3 IR (mA) IR Reverse Current (mA) IF (A) Current (A) IF Forward 0.9 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 3.5 2.5 2 1.5 1 0.8 0.7 0.6 0.5 0.4 0.2 0.5 0.1 0 0 0 0.5 1 1.5 2 2.5 3 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0.3 3.5 0 VF (V) VF Forward Voltage 500 1000 1500 VR (V) VR Reverse Voltage (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 180 180 14 14 160 160 12 12 140 140 120 120 88 100 100 C (pF) Q (nC) C QC Capacitive Charge (nC) 10 10 66 44 80 80 60 60 40 40 22 00 20 20 0 0 200 200 400 400 600 600 800 800 1000 1000 VR Reverse Voltage (V) VR (V) Figure 3. Total Capacitance Charge vs. Reverse Voltage 3 CPW4-1200-S002 Rev. A 0 0 0.1 0.1 1 1 10 10 100 100 VR (V) Figure 4. Capacitance vs. Reverse Voltage 1000 1000 Chip Dimensions B C symbol A D dimension mm inch A 1.18 0.046 B 1.18 0.046 C 0.615 0.024 D 0.615 0.024 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes CPW4 Spice models: http://response.cree.com/Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 4 CPW4-1200-S002 Rev. A, 04-15 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power