CPW3-0600S002–Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 600 V IF(AVG)= 2 A Features • • • • • • • Qc Chip Outline = 4.8 nC 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Swtitching Positive Temperature Coefficient on VF Part Number Anode Cathode Package Marking CPW3-0600S002B Al NiV/Ag Sawn on Foil Wafer # on Foil Maximum Ratings Rev. A W3-0600S002 Datasheet: CP Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V 2 A TJ=175˚C IF(AVG) Average Forward Current Note IFRM Repetitive Peak Forward Surge Current 12 A TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3 1 IFSM Non-Repetitive Peak Forward Surge Current 65 A TC=25˚C, tP=10 µs, Pulse 1 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C Subject to change without notice. www.cree.com/power 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage 1.5 1.8 1.8 2.4 V IF = 2 A TJ=25°C IF = 2 A TJ=175°C IR Reverse Current 10 20 50 100 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C QC Total Capacitive Charge 4.8 nC VR = 600 V, IF = 2 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 120 12 11 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. Assumes θJC Thermal Resistance of 3.8˚C/W or less Mechanical Parameters Parameter Typ. Unit Die Size 1.07 x 0.66 mm Anode Pad Size 0.93 x 0.52 mm Anode Pad Opening 0.82 x 0.41 mm Thickness 377 ± 10% μm Wafer Size 100 mm 4 μm 1.8 μm Anode Metalization (Al) Cathode Metalization (NiV/Ag) Frontside Passivation 2 CPW3-0600S002 Rev. A Polyimide Note Chip Dimensions B symbol C A dimension mm inch A 1.07 0.042 B 0.66 0.026 C 0.93 0.037 D 0.52 0.020 D Part Number Anode Cathode Package Marking CPW3-0600S002B Al NiV/Ag Sawn on Foil Wafer # on Foil The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2 – 3 weeks of delivery to assure 100% release of all die without issues. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 3 CPW3-0600S002 Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power