CPW4-1200-S020B

CPW4-1200-S020B
Silicon Carbide Schottky Diode Chip
Z-Rec® Rectifier
Features
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VRRM
=
1200 V
IF(AVG)
=
20 A
Q c
= 130 nC
Test Conditions
Note
Chip Outline
1.2kV Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Part Number
Die Size
Anode
Cathode
CPW4-1200S020B
3.08 x 3.08 mm2
Al
Ni/Ag
Maximum Ratings
v. A
4-1200S020 Re
Datasheet: CPW
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Blocking Voltage
1200
V
IF
Continuous Forward Current
20
A
TJ=175˚C
1
IFRM
Repetitive Peak Forward Surge Current
91
61
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
1
IFSM
Non-Repetitive Forward Surge Current
130
110
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
1
IF,Max
Non-Repetitive Peak Forward Current
1150
950
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Operating Junction and Storage Temperature
-55 to
+175
˚C
325
˚C
TJ , Tstg
TProc
Maximum Processing Temperature
10 min. maximum
1. Assumes RθJC Thermal Resistance of 0.62˚C/W or less
Subject to change without notice.
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1
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
Fig. 1
IR
Reverse Current
35
65
200
400
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
99
nC
VR = 800 V, IF = 20 A
di/dt = 200 A/μs
TJ = 25°C
Fig. 3
C
Total Capacitance
1500
93
67
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 4
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
3.08 x 3.08
mm
Anode Pad Size
2.79 x 2.79
mm
Anode Pad Opening
2.51 x 2.51
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
4
μm
1.4
μm
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
2
Note
CPW4-1200-S020 Rev. A
Polyimide
Typical Characteristics
40
1
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
35
30
0.9
0.8
0.7
IR (mA)
IF (A)
25
20
15
0.6
0.5
0.4
0.3
10
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
0.2
5
0.1
0
0
1
2
3
0
4
0
500
VF (V)
1500
VR (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
140
1600
120
1400
1200
100
1000
80
C (pF)
QC (nC)
1000
60
800
600
40
400
20
200
0
0
0
200
400
600
800
1000
1200
VR (V)
Figure 3. Total Capacitance Charge vs. Reverse Voltage
3
CPW4-1200-S020 Rev. A
0.1
1
10
100
VR (V)
Figure 4. Capacitance vs. Reverse Voltage
1000
Chip Dimensions
B
C
symbol
A
D
dimension
mm
inch
A
3.08
0.121
B
3.08
0.121
C
2.51
0.099
D
2.51
0.099
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree
representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh
Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not
limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency
medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
CPW4 Spice models: http://response.cree.com/Request_Diode_model
SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
4
CPW4-1200-S020 Rev. A, 04-2015
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power