CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to PN: CMPA25 6002 be achieved. 5D Typical Performance Over 2.5-6.0 GHz Parameter (TC = 25˚C) 2.5 GHz 4.0 GHz 6.0 GHz Units Gain 27.5 24.3 23.1 dB Saturated Output Power, PSAT1 35.8 37.5 25.6 W Power Gain @ POUT = 43 dBm 23.1 20.9 16.3 dB PAE @ POUT 43 dBm 31.5 32.8 30.7 % Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. 1 ptember 2012 Rev 1.3 – Se Features Applications • 24 dB Small Signal Gain • Ultra Broadband Amplifiers • 25 W Typical PSAT • Fiber Drivers • Operation up to 28 V • Test Instrumentation • High Breakdown Voltage • EMC Amplifier Drivers • High Temperature Operation • Size 0.180 x 0.145 x 0.004 inches Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Drain-source Voltage VDSS 84 VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C RθJC 2.5 ˚C/W TS 320 ˚C Operating Junction Temperature Thermal Resistance, Junction to Case (packaged)1 Mounting Temperature (30 seconds) Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier. Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage V(GS)TH -3.8 -3.0 -2.3 V Gate Quiescent Voltage V(GS)Q – -2.7 – VDC Saturated Drain Current IDS 8.0 9.7 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 20 mA On Resistance RON – 0.35 – Ω VDS = 0.1 V VG-ON – 1.9 – V IGS = 3.6 mA Small Signal Gain S21 21 25 – dB Power Output at 2.5 GHz POUT1 30 – – W Power Output at 3.0 GHz POUT2 20 25 – W Power Output at 4.0 GHz POUT3 20 30 – W Power Added Efficiency PAE – 35 – % VDD = 26 V, IDQ = 1200 mA GP – 20 – dB VDD = 26 V, IDQ = 1200 mA Input Return Loss S11 – 6 – dB VDD = 26 V, IDQ = 1200 mA Output Return Loss S22 – 5 – dB VDD = 26 V, IDQ = 1200 mA VSWR – – 5:1 Y No damage at all phase angles, VDD = 26 V, IDQ = 1200 mA, POUT = 25W CW DC Characteristics Gate Forward Voltage VDS = 10 V, ID = 20 mA VDD = 26 V, IDQ = 1200 mA RF Characteristics Power Gain Output Mismatch Stress VDD = 26 V, IDQ = 1200 mA VDD = 26 V, IDQ = 1200 mA, PIN ≤ 26 dBm VDD = 26 V, IDQ = 1200 mA, PIN ≤ 26 dBm VDD = 26 V, IDQ = 1200 mA, PIN ≤ 26 dBm Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Die Dimensions (units in microns) Overall die size 3680 x 4560 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number 1 Function RF-IN Pad Size (microns) Note RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from -1.5 V to -2.5 V and external blocking capacitor. Description 202 X 204 3 2 VG1_A Gate control for stage 1. VG -1.5 - 2.5 V. 138 x 147 1,2 3 VG1_B Gate control for stage 1. VG -1.5 - 2.5 V. 138 x 147 1,2 4 VD1_A Drain supply for stage 1. VD = 26 V. 167 x 225 1 5 VD1_B Drain supply for stage 1. VD = 26 V. 167 x 225 1 6 VG2_A Gate control for stage 2A. VG -1.5 - 2.5 V. 167 x 175 1 7 VG2_B Gate control for stage 2B. VG -1.5 - 2.5 V. 167 x 175 1 8 VD2_A Drain supply for stage 2A. VD = 26 V. A 1 9 VD2_B Drain supply for stage 2B. VD = 26 V. A 1 RF-Out This pad is DC blocked internally. The DC impedance ~ 0 ohm due output matching circuit. Requires external matching circuit for optimal performance for f >4.0 GHz. 252 x 204 3 10 Notes: 1 Attach bypass capacitor to port 2-9 per application circuit. 2 VG1_A and VG1_B is connected internally so it would be enough to connect either one for proper operation. 3 The RF Input and Output pad have a ground-signal-ground with a pitch of 10 mil (250 um). Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_appnotes.asp • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Block Diagram Showing Additional Capacitors & Output Matching Section for Operation Over 2.5 to 6.0 GHz Designator Description Quantity C1,C2,C3,C4,C5,C6,C7,C8 CAP, 120pF, +/-10%, SINGLE LAYER, 0.030”, Er 3300, 100V, Ni/Au TERMINATION 8 C9,C10,C11,C12 CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V, Ni/Au TERMINATION 4 Notes: 1 An additional microstripline of 31 ohm impedance and electrical length of 72° at 6.0 GHz at the output of the MMIC is required to optimize overall performance in the 2.5 to 6.0 GHz frequency band. 2 The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 3 The MMIC die and capacitors should be connected with 2 mil gold bond wires. Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB Input & Output Return Losses vs Frequency 30 0 28 -2 26 -4 24 -6 22 -8 Gain (dB) Gain (dB) Small Signal Gain vs Frequency 20 18 S22 Typical -10 -12 16 -14 14 -16 12 -18 10 S11 Typical -20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Power Gain vs Frequency Gain vs Output Power as a Function of Frequency 30 30 28 28 Output Power = 44 dBm 26 Output Power = 43 dBm 24 24 22 22 Gain (dB) Power Gain (dB) 26 20 18 20 2.5 GHz 18 4.0 GHz 16 16 14 14 12 12 6.0 GHz 10 10 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (GHz) 5.0 5.5 6.0 6.5 18 22 26 30 Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA2560025D Rev 1.3 34 38 42 46 Output Power (dBm) Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB Saturated Output Power Performance (PSAT) vs Frequency 50 Frequency (GHz) PSAT (dBm) PSAT (W) 2.5 45.54 35.8 47 3.0 44.43 27.7 46 3.5 45.52 35.7 45 4.0 45.74 37.5 44 4.5 44.82 30.4 43 5.0 45.08 32.2 5.5 45.07 32.1 6.0 44.08 25.6 Saturated Output Power, PSAT (dBm) 49 48 Typical Psat (dBm) 42 41 40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Note: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. PAE at 43 dBm and 44 dBm Output Power vs Frequency 45% 45% 40% 40% Power Added Efficiency, PAE (%) Power Added Efficiency, PAE (%) Power Added Efficiency vs Output Power as a Function of Frequency 2.5 GHz 35% 4.0 GHz 30% 6.0 GHz 25% 20% 15% 10% 5% 35% 30% 25% 20% 15% PAE 44 dBm PAE 43 dBm 10% 5% 0% 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 0% 2.0 2.5 3.0 3.5 Output Power, POUT (dBm) Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA2560025D Rev 1.3 4.0 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance of the CMPA2560025D as Measured in CMPA2560025F-TB 2ND Harmonic vs Output Power as a Function of Frequency 0 4.0 GHz 2.5 GHz -10 6.0 GHz 4.0 GHz -15 -20 6.0 GHz -20 -30 IM3 (dBc) 2ND Harmonic (dBc) 0 -5 2.5 GHz -10 IM3 vs Total Average Power as a Function of Frequency -40 -25 -30 -35 -40 -50 -45 -50 -60 -55 -70 22 24 26 28 30 32 34 36 38 40 42 44 46 -60 22 24 26 Output Power, POUT (dBm) 28 30 32 34 36 38 40 42 Total Average Output Power (dBm) Gain at POUT of 40 dBm at 25°C & 75°C vs Frequency 30 25 Gain (dB) 20 15 Ambient (25°C) 10 Hot (75°C) 5 0 2.5 2.8 3.1 3.4 3.7 4.0 Frequency (GHz) Note: The temperature coefficient is -0.05 dB/°C Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf 44 Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 50 + j0 36.2 - j15.4 3000 50 + j0 32.7 – j15.4 3500 50 + j0 29.6 - j14.7 4000 50 + j0 27.0 - j13.8 4500 50 + j0 24.8 - j12.1 5000 50 + j0 23.0 - j10.4 5500 50 + j0 21.6 - j8.6 6000 50 + j0 20.6 - j6.7 Note 1. VDD = 26V, IDQ = 1200mA in the 780019 package. Note 2. Optimized for PSAT Note 3: The quoted impedances are those presented to the die by the CMPA2560025F-TB demonstration amplifier, fully de-embedded to the die bond pad reference plane. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf