Cree, CGHV96050F2 50W, 8.4-9.6GHz, GaN HEMT IM

CGHV96050F2
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
PN: CGHV960
50F2
Package Type
: 440217
package for optimal electrical and thermal performance.
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter
8.4 GHz
8.8 GHz
9.0 GHz
9.2 GHz
9.4 GHz
9.6 GHz
Units
Linear Gain
13.8
12.8
12.3
12.3
12.2
11.8
dB
85
77
81
82
75
75
W
10.4
9.9
10.1
10.1
9.8
9.8
dB
57
54
52
54
48
45
%
Output Power
Power Gain
Power Added Efficiency
Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W)
ber 2015
Rev 3.1 – Septem
Features
Applications
• 8.4 - 9.6 GHz Operation
• Marine Radar
• 80 W POUT typical
• Weather Monitoring
• 10 dB Power Gain
• Air Traffic Control
• 55 % Typical PAE
• Maritime Vessel Traffic Control
• 50 Ohm Internally Matched
• Port Security
• <0.1 dB Power Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
25˚C
Drain-source Voltage
VDSS
100
Volts
Gate-source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
57.6 / 86.4
Watts
(CW / Pulse)
Storage Temperature
TSTG
-65, +150
˚C
TJ
225
˚C
Maximum Drain Current
IDMAX
6
Amps
Maximum Forward Gate Current
IGMAX
14.4
mA
Soldering Temperature
TS
245
˚C
Screw Torque
τ
40
in-oz
Thermal Resistance, Junction to Case
RθJC
1.40
˚C/W
Pulse Width = 100 µs, Duty Cycle =
10%, PDISS = 86.4 W
Thermal Resistance, Junction to Case
RθJC
2.12
˚C/W
CW, 85˚C, PDISS = 57.6 W
TC
-40, +150
˚C
Operating Junction Temperature
1
Case Operating Temperature3
25˚C
Note:
1
Current limit for long term reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
See also, the Power Dissipation De-rating Curve on Page 9.
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 14.4 mA
Gate Quiscent Voltage
VQ
–
-3.0
–
V
VDS = 40 V, ID = 500 mA
Saturated Drain Current2
IDS
10.5
13.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
100
–
–
V
VGS = -8 V, ID = 14.4 mA
Small Signal Gain
S21
10.5
11.8
–
dB
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
Input Return Loss 1
S11
–
–5.2
–2.1
dB
Output Return Loss
S22
–
–12.3
–9.0
dB
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
Power Output3, 4
POUT
47
70
–
W
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
Power Added Efficiency3, 4
PAE
32
45
–
%
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
VSWR
–
–
5:1
Y
No damage at all phase angles, VDD = 40 V,
DC Characteristics
RF Characteristics
Conditions
1
3
Output Mismatch Stress
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm,
Frequency = 8.4-9.6 GHz
IDQ = 500 mA,
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGHV96050F2-AMP (AD-09115) under 100 µS pulse width, 10% duty
4
Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB.
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2 Typical Performance
Figure 1. - Small Signal Gain and Return Loss vs Frequency
of CGHV96050F2 measured in CGHV96050F2-AMP
VDS = 40 V, IDQ = 500mA
20
15
Gain (dB), Return Losses (dB)
10
5
0
-5
-10
-15
S11typ
-20
S22typ
S21typ
-25
-30
7
7.5
8
8.5
9
Frequency (GHz)
9.5
10
10.5
11
Figure 2. - Power Gain vs. Frequency and Input Power
PG Vs Freq & Pin
VDD = 40 V, Pulse Width
= 100
µsec,
Duty Cycle = 10%
Pulse 100
uS/ 10
% Duty
14
12
Power Gain (dB)
10
8
6
Psat
4
Pin = 40 dBm
Pin = 39 dBm
Pin = 38 dBm
2
Pin = 37 dBm
Pin = 36 dBm
0
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
Frequency (GHz)
9.2
9.4
9.6
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CGHV96050F2 Rev 3.1
9.8
10.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2 Typical Performance
PoutPower
vs Pin vs. Input Power
Figure 3. - Output
Pulse 100 uS/ 10% duty
VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%
50
9.0 GHz
9.2 GHz
45
9.4 GHz
Power Output (dBm)
9.5 GHz
40
35
30
25
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
Power Input (dBm)
Figure 4. - Power Gain
vs.Gain
Frequency
Power
vs Pin and Input Power
uS/ 10%
duty
VDD = 40 V, Pulse Pulse
Width100
= 100
µsec,
Duty Cycle = 10%
15
14
13
12
11
Power Gain (dB)
10
9
8
7
6
9.0 GHz
5
9.2 GHz
4
9.4 GHz
3
9.6 GHz
2
1
0
14
16
18
20
22
24
26
28
30
Input Power(dBm)
32
34
36
38
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CGHV96050F2 Rev 3.1
40
42
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2 Typical Performance
Figure 5. - Power Added Efficiency vs. Input Power
Power Added Efficiency vs. Pin
VDD = 40 V, Pulse Width
= 100
µsec,
Pulse 100
uS/ 10%
dutyDuty Cycle = 10%
60
55
9.0 GHz
50
9.2 GHz
9.4 GHz
Power Added E fficiency (%)
45
9.6 GHz
40
35
30
25
20
15
10
5
0
14
16
18
20
22
24
26
28
30
Input Power (dBm)
32
34
36
38
40
42
Figure 6. - Output Power vs. Time
Power vs. Time (Pin 39 dBm)
VDD = 40 V,10,
PIN50= ,39
Duty
= 10%
100dBm,
and 300
uS Cycle
(10 % duty)
48.70
48.60
10us
50us
48.50
100us
300us
Power (dBm)
48.40
48.30
48.20
48.10
48.00
47.90
47.80
47.70
0
50
100
150
200
250
Pulse Length (uS)
300
350
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CGHV96050F2 Rev 3.1
400
450
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2 Typical Performance
Figure 7. - Output Power vs. Input Power & Frequency
Pout Vs Freq & Pin
VDD = 40 V, PulsePulse
Width
= uS
100
µsec,
Duty Cycle = 10%
100
/ 10
% Duty
50.0
49.0
48.0
Output Power (dBm)
47.0
46.0
45.0
Psat
Pin = 40
Pin = 39
44.0
Pin = 38
Pin = 37
43.0
Pin = 36
42.0
41.0
40.0
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
Frequency (GHz)
9.2
9.4
9.6
9.8
10.0
9.8
10.0
Figure 8. - Power Added Efficiency vs. Input Power & Frequency
FreqDuty
& PinCycle = 10%
VDD = 40 V, PIN PAE
= 39Vs.
dBm,
Pulse 100 uS / 10 % Duty
70
60
Power Added Efficiency (%)
50
40
Psat
30
Pin = 40
Pin = 39
Pin = 38
20
Pin = 37
Pin = 36
10
0
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
Frequency (GHz)
9.2
9.4
9.6
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
6
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 47 OHM, +/- 1%, 1/16W,0603
1
C1
CAP, 0.9pF, +/- 0.05pF,200V, 0402
1
C11
CAP, 1.6pF, +/- 0.1 pF,200V, 0402
1
C2, C12
CAP, 1.0pF, +/- 0.1 pF,200V, 0402
2
C3,C13
CAP, 10.0pF, +/-5%,250V, 0603,
2
C4,C14
CAP, 470PF, 5%, 100V, 0603, X
2
C5,C15
CAP,33000PF, 0805,100V, X7R
2
C6
CAP 10UF 16V TANTALUM
1
C18
CAP, 470uF, 20%, 80V, ELECT, SMD Size K
1
J1,J2
CONN,N,FEM,W/.500 SMA FLNG
2
J3
HEADER RT>PLZ .1CEN LK 9POS
1
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
W1
CABLE ,18 AWG, 4.2"
1
PCB, RF35, 2.5 X 3.0 X (0.020/0.250)
1
TRANSISTOR, CGHV96050F2
1
#2 SPLIT LOCKWASHER SS
4
2-56 SOC HD SCREW 1/4 SS
4
CGHV96050F2-AMP Demonstration Amplifier Circuit
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
7
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2-AMP Demonstration Amplifier Circuit Schematic
CGHV96050F2-AMP Demonstration Amplifier Circuit Outline
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
8
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96050F2 Power Dissipation De-rating Curve
Power dissipation derating curve vs. Max TCase
CW & Pulse (100 uS/ 10% duty)
100
90
Power dissipation (W)
80
70
60
Note
50
40
30
20
CW
Pulse 100uS / 10%
10
0
0
50
100
150
200
250
Flange Temperature (C)
Note: Shaded area exceeds Maximum Case Operating Temperature (See Page 2).
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
9
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV96050F2 (Package Type —
­ 440217)
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
10
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV96050F2
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN HEMT High Voltage
Product Line
Parameter
Upper Frequency1
Power Output
Package
Value
Units
9.6
GHz
50
W
Flange
-
Table 1.
Note : Alpha characters used in frequency code
1
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV96050F2
GaN HEMT
Each
CGHV96050F2-TB
GaN HEMT
Each
CGHV96050F2-AMP
Test board without GaN HEMT
Each
CGHV96050F2-JMT
CGHV96050F2 Delivered in a JEDEC
Matrix tray
50 parts / tray.
Order multiple = 50pcs
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
12
CGHV96050F2 Rev 3.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
13
CGHV96050F2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf