CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged PN: CGHV960 50F1 Package Type : 440210 package for optimal electrical and thermal performance. Typical Performance Over 7.9-8.4 GHz (TC = 25˚C) Parameter 7.9 GHz 8.0 GHz 8.1 GHz 8.2 GHz 8.3 GHz 8.4 GHz Units Linear Gain 17.0 16.7 16.4 15.9 15.2 14.6 dB Output Power 22.4 28.2 28.2 31.6 31.6 31.6 W Power Gain 15.6 15.0 15.1 14.5 14.0 13.2 dB 30 37 37 39 38 37 % Power Added Efficiency Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2 Features Applications • 7.9 - 8.4 GHz Operation • Satellite Communication • 80 W POUT typical • Terrestrial Broadband • >13 dB Power Gain • 33 % Typical Linear PAE 15 Rev 2.0 – May 20 • 50 Ohm Internally Matched • <0.1 dB Power Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Drain-source Voltage VDSS 100 Volts 25˚C Gate-source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 57.6 / 86.4 Watts (CW / Pulse) Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C Maximum Drain Current IDMAX 6 Amps Maximum Forward Gate Current Operating Junction Temperature Conditions IGMAX 14.4 mA Soldering Temperature1 TS 245 ˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case RθJC 1.26 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 86.4 W Thermal Resistance, Junction to Case RθJC 2.16 ˚C/W CW, 85˚C, PDISS = 57.6 W TC -40, +150 ˚C Case Operating Temperature3 25˚C Note: 1 Current limit for long term reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 10. Electrical Characteristics (Frequency = 7.9 - 8.4 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 14.4 mA Gate Quiscent Voltage VQ – -3.0 – V VDS = 40 V, ID = 500 mA Saturated Drain Current2 IDS 11.5 13.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 14.4 mA Small Signal Gain S21 13.25 16 – dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm Input Return Loss S11 – –4.9 -3.0 dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm Output Return Loss S22 – –10.7 -5.5 dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm Power Gain3, 4 PG1 10.75 15.6 – dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz Power Gain PG2 10.75 13.5 – dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz Power Added Efficiency3, 4 PAE1 18 25 – % VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz Power Added Efficiency PAE2 18 27 – % VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz OQPSK Linearity3, 4 ACLR1 – – -26 dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz OQPSK Linearity ACLR2 – – -26 dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz Output Mismatch Stress VSWR – 5:1 – Y No damage at all phase angles, VDD = 40 V, IDQ = 500 mA DC Characteristics Conditions 1 RF Characteristics3 3, 4 3, 4 3, 4 Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha: Filter = 0.2. 4 Fixture loss de-embedded using the following offsets: At 7.9 GHz, input and output = 0.45 dB. At 8.4 GHz, input = 0.50 dB and output = 0.55 dB. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Typical Performance Figure 1. - Small Signal Gain and Return Loss vs Frequency Typical Small Signal Gain and Return Loss vs Frequency of CGHV96050F1 measured of the CGHV96050F1 measuredin in CGHV96050F1-AMP CGHV96050F1-TB VDS =40 V, IDQ =500 mA VDS = 40 V, IDQ = 500mA Small Signal Gain, Input and Output Return Loss (dB) 20 15 10 S11 typ 5 S21 typ S22 typ 0 -5 -10 -15 -20 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) 9.5 10.0 10.5 11.0 Figure 2. - Intermodulation Distortion IM PERFORMANCE vs Performance Tone Spacing vs. Tone Spacing Pout 43.0 dBm @ 8.2 GHz VDD = 40 V, Frequency = 8.2 GHz, Output Power = 44 dBm / 20 W 0 -5 Intermodulation Distortion (dBc) -10 -15 IM3_Negative IM3_Positive IM5_Negative IM5_Positive IM7_Negative IM7_Positive -20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 Frequency (MHz) 10 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV96050F1 Rev 2.0 100 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Typical Performance Figure 3. - IM3 and IM5 vs. Output Power at 7.9 GHz, 8.2 GHz, and 8.4 GHz IM3 & IM5 vs. Pout 7.9, 8.2 & 8.4 GHz VDD = 40 V, 100 Tone Spacing = 100 kHz KHz Tone Spacing 0 7.9 GHz_IM3_Negative 8.2 GHz_IM3_Negative 8.4 GHz_IM3_Negative 7.9 GHz_IM5_Negative 8.2 GHz_IM5_Negative 8.4 GHz_IM5_Negative Intermodulation Distortion (dBc) -10 -20 7.9 GHz_IM3_Positive 8.2 GHz_IM3_Positive 8.4 GHz_IM3_Positive 7.9 GHz_IM5_Positive 8.2 GHz_IM5_Positive 8.4 GHz_IM5_Positive -30 -40 -50 -60 -70 -80 18 20 22 24 26 28 30 32 34 Output Power (dBm) 36 38 40 42 44 46 Figure 4. - Two Tone IMS vs. Output Power IM3 Two Tone vs. Pout VDD = 40 V, Tone = 100 kHz 100Spacing KHz 0 Intermodulation Distortion (dBc) -10 -20 -30 -40 7.9 GHz 8.0 GHz -50 8.1 GHz 8.2 GHz -60 8.3 GHz 8.4 GHz -70 18 20 22 24 26 28 30 32 34 Output Power (dBm) 36 38 40 42 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV96050F1 Rev 2.0 44 46 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Typical Performance Figure 5. - Two Tone Power Added Efficiency vs. Output Power PAE Two Tone vs. Pout KHz VDD = 40 V, Tone100 Spacing = 100 kHz 50% 7.9 GHz 45% 8.0 GHz 8.1 GHz Power Added Efficiency (%) 40% 8.2 GHz 8.3 GHz 35% 8.4 GHz 30% 25% 20% 15% 10% 5% 0% 18 20 22 24 26 28 30 32 34 Output Power (dBm) 36 38 40 42 44 46 40 42 44 46 Figure 6. - Two Tone Gain vs. Output Power Gain Two Tone vs. Pout VDD = 40 V, Tone100 Spacing KHz = 100 kHz 20 19 18 17 16 15 14 13 Gain (dB) 12 11 7.9 GHz 10 8.0 GHz 9 8.1 GHz 8 8.2 GHz 7 8.3 GHz 6 8.4 GHz 5 4 3 2 1 0 18 20 22 24 26 28 30 32 34 Output Power (dBm) 36 38 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Typical Performance Figure 7. - Spectral Mask under OQPSK Modulation, 1.6 Msps VDD = 40 V, Output = 25 44WdBm / 25 W SpectralPower Mask @ 10 5 0 7.9 GHz -5 8.2 GHz -10 8.4 GHz -15 Spectra (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -6 -5 -4 -3 -2 -1 0 1 Frequency (MHz) 2 3 4 5 6 Figure 8. - Linear Output Power, Gain, and Power Added Efficiency vs Frequency CGHV96050F1 Linear output power, Gain and PAE @ -30 dBc, 1.6 MHz from Carrier 40 mA, V, IDQ 1.6 = 500Msps, mA, 1.6 Msps OPSKModulation Modulation VDD = 40 V, IDQ =Vdd 500 OQPSK at -30 dBc 50 Power Added Efficiency (%) 45 Output Power (W) Output Power (W), Gain (dB) & PAE (%) Power Gain (dB) 40 35 30 25 20 15 10 5 0 7.8 7.9 8.0 8.1 8.2 Frequency (GHz) 8.3 8.4 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV96050F1 Rev 2.0 8.5 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Typical Performance Figure 9. - OQPSK Linearity vs Output Power VDD = 40(1.6 V, Frequency = 1.6 OPSK Mhz) Linearity Vs. MHz Pout 0 -5 7.9 GHz Intermodulation Distortion (dBc) -10 8.2 GHz 8.4 GHz -15 -20 -25 -30 -35 -40 -45 -50 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Output Power (dBm) 39 40 41 42 43 44 45 46 Figure 10. - Power Gain and Power Added Efficiency vs Output Power Power Gain Vs. Pout VDD = 40 V, IDQ = 500 mA, 1.6 Msps, Modulation at -30 dBc OPSK 1.6OQPSK MHz Power Gain (dB). Power Added Efficiency (%) 40 35 Power Gain (7.9 GHz) Power Gain (8.2 GHz) Power Gain (8.4 GHz) PAE (7.9 GHz) PAE (8.2 GHz) PAE (8.4 GHz) 30 25 20 15 10 5 0 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Output Power (dBm) 39 40 41 42 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV96050F1 Rev 2.0 43 44 45 46 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 47 OHM,+/-1%, 1/16 W, 0603, SMD 1 R2, R3 RES, 0 OHM +/-5%, 125 mW, 1206, SMD 2 C1 CAP, 1.6pF, +/- 0.1 pF, 200V, 0402, ATC 600L 1 C2 CAP, 1.0pF, +/- 0.1 pF, 200V, 0402, ATC 600L 1 CAP, 10 pF +/-5%, 0603, ATC 2 C3, C13 C4, C14 CAP, 470 pF +/-5%, 100 V, 0603 2 C5, C15 CAP, 33,000 pF, 0805, 100 V, X7R 2 C11, C12 CAP, 1.8pF, +/- 0.1 pF, 200V, 0402, ATC 600L 2 C16 CAP, 1 uF +/-10%, 100 V, X7P, 1210 1 C17 CAP, 33 uF +/-20%, G-CASE 1 C18 CAP, 470 uF, +/-20%, ELECTROLYTIC 1 CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1 - PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK, 440210 PKG 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 CGHV96050F1 1 J1,J2 J3 Q1 CGHV96050F1-AMP Demonstration Amplifier Circuit Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1-AMP Demonstration Amplifier Circuit Schematic CGHV96050F1-AMP Demonstration Amplifier Circuit Outline Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F1 Power Dissipation De-rating Curve Note. Shaded area exceeds Maximum Case Operating Temperature (See Page 2) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV96050F1 (Package Type — 440210) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV96050F1 Package, Linear Test Power Output (W) Upper Frequency (GHz) Cree GaN HEMT High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 9.6 GHz 50 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV96050F1 GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV96050F1-TB CGHV96050F1-AMP Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CGHV96050F1 Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 14 CGHV96050F1 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf