Cree CGHV60170D 170W, GaN HEMT Die (Cree Wireless)

CGHV60170D
170 W, 6.0 GHz, 50V GaN HEMT Die
Cree’s
CGHV60170D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift
PN: CGHV60
170D
velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider
bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
• 18 dB Typical Small Signal Gain at 4 GHz
• Broadband amplifiers
• 17 dB Typical Small Signal Gain at 6 GHz
• Tactical communications
• 65% Typical Power Added Efficiency
• Satellite communications
• 170 W Typical PSAT
• Industrial, Scientific, and Medical ampli-
• 50 V Operation
fiers
• High Breakdown Voltage
• Class AB, Linear amplifiers suitable for
• Up to 6 GHz Operation
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
•
•
Bare die are shipped on tape or in Gel-Pak® containers.
Non-adhesive tacky membrane immobilizes die during
ember 2014
Rev 0.1 – Dec
shipment.
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
VDSS
150
VDC
25˚C
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Storage Temperature
TSTG
-65, +150
˚C
TJ
225
˚C
Maximum Drain Current1
IMAX
12.6
A
Maximum Forward Gate Current
IGMAX
20.8
mA
25˚C
Thermal Resistance, Junction to Case (packaged)2
RθJC
1.36
˚C/W
85˚C, 83.2W Dissipation
Thermal Resistance, Junction to Case (die only)
RθJC
0.83
˚C/W
85˚C, 83.2W Dissipation
TS
320
˚C
30 seconds
Operating Junction Temperature
Mounting Temperature
25˚C
Note Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
1
Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
VP
-3.8
-3.0
–2.3
V
VDS = 10 V, ID = 20.8 mA
Drain Current1
IDSS
16.8
20.8
–
A
VDS = 6 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
150
–
–
V
VGS = -8 V, ID = 20.8 mA
On Resistance
RON
–
0.14
–
Ω
VDS = 0.1 V
VG-ON
–
1.9
–
V
IGS = 20.8 mA
Small Signal Gain
GSS
–
17
–
dB
VDD = 50 V, IDQ = 260 mA
Saturated Power Output2,3
PSAT
–
170
–
W
VDD = 50 V, IDQ = 260 mA
η
–
65
–
%
VDD = 50 V, IDQ = 260 mA, PSAT = 170 W
IM3
–
-30
–
dBc
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 260 mA
POUT = 170 W CW
Input Capacitance
CGS
–
28.3
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
6.35
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.6
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
DC Characteristics
Gate Pinch-Off Voltage
Gate Forward Voltage
RF Characteristics
Drain Efficiency4
Intermodulation Distortion
Output Mismatch Stress
VDD = 50 V, IDQ = 260 mA,
POUT = 170 W PEP
Dynamic Characteristics
Notes:
1
Scaled from PCM data
2
PSAT is defined as IG = 2.0 mA.
3
Pulsed 100 μsec, 10%
4
Drain Efficiency = POUT / PDC
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
DIE Dimensions (units in microns)
Overall die size 820 x 5400 (+0/-50) microns, die thickness 100 microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/RF.
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - CGHV60170D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C
VDD = 50 V, IDQ = 260 mA, Frequency = 2.7 GHz
Figure 2. - CGHV60170D GMAX and K Factor vs. Frequency at Tcase = 25°C
VDD = 50 V, IDQ = 260 mA
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 260 mA, magnitude / angle)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.5
0.943
-168.72
9.039
75.28
0.009
-13.64
0.544
-156.15
0.6
0.946
-170.27
7.375
70.86
0.009
-17.83
0.571
-155.58
0.7
0.948
-171.36
6.170
66.84
0.009
-21.63
0.600
-155.23
0.8
0.951
-172.18
5.255
63.13
0.009
-25.12
0.627
-155.11
0.9
0.953
-172.81
4.538
59.69
0.008
-28.34
0.654
-155.19
1
0.956
-173.33
3.961
56.48
0.008
-31.32
0.680
-155.45
1.1
0.959
-173.76
3.488
53.50
0.008
-34.08
0.704
-155.84
1.2
0.961
-174.13
3.095
50.72
0.008
-36.64
0.726
-156.32
1.3
0.963
-174.45
2.764
48.12
0.007
-39.02
0.747
-156.87
1.4
0.966
-174.73
2.482
45.69
0.007
-41.22
0.766
-157.45
1.5
0.968
-174.99
2.239
43.42
0.007
-43.27
0.783
-158.07
1.6
0.970
-175.23
2.030
41.30
0.007
-45.17
0.799
-158.69
1.7
0.971
-175.44
1.848
39.31
0.006
-46.94
0.814
-159.31
1.8
0.973
-175.64
1.688
37.44
0.006
-48.59
0.827
-159.93
1.9
0.974
-175.83
1.548
35.68
0.006
-50.12
0.839
-160.53
2
0.976
-176.00
1.424
34.02
0.006
-51.55
0.850
-161.11
2.1
0.977
-176.17
1.314
32.47
0.005
-52.88
0.860
-161.68
2.2
0.978
-176.32
1.216
31.00
0.005
-54.13
0.869
-162.23
2.3
0.979
-176.46
1.128
29.60
0.005
-55.30
0.877
-162.76
2.4
0.980
-176.60
1.049
28.29
0.005
-56.39
0.885
-163.27
2.5
0.981
-176.73
0.977
27.04
0.005
-57.41
0.892
-163.75
2.6
0.982
-176.85
0.913
25.85
0.005
-58.37
0.898
-164.22
2.7
0.983
-176.97
0.855
24.72
0.004
-59.27
0.904
-164.67
2.8
0.984
-177.08
0.802
23.65
0.004
-60.11
0.909
-165.09
2.9
0.984
-177.18
0.753
22.63
0.004
-60.91
0.914
-165.50
3
0.985
-177.29
0.709
21.65
0.004
-61.66
0.919
-165.90
3.2
0.986
-177.47
0.631
19.82
0.004
-63.03
0.927
-166.63
3.4
0.987
-177.65
0.566
18.13
0.004
-64.25
0.934
-167.31
3.6
0.988
-177.81
0.510
16.57
0.003
-65.34
0.940
-167.93
3.8
0.989
-177.95
0.462
15.12
0.003
-66.31
0.945
-168.50
4
0.989
-178.09
0.420
13.78
0.003
-67.19
0.950
-169.02
4.2
0.990
-178.22
0.384
12.51
0.003
-67.97
0.954
-169.51
4.4
0.991
-178.34
0.352
11.32
0.003
-68.67
0.958
-169.96
4.6
0.991
-178.45
0.324
10.20
0.003
-69.30
0.961
-170.38
4.8
0.991
-178.56
0.299
9.14
0.002
-69.86
0.964
-170.77
5
0.992
-178.66
0.277
8.13
0.002
-70.36
0.966
-171.14
5.2
0.992
-178.76
0.258
7.18
0.002
-70.81
0.968
-171.48
5.4
0.992
-178.85
0.240
6.26
0.002
-71.20
0.970
-171.80
5.6
0.993
-178.94
0.224
5.38
0.002
-71.55
0.972
-172.10
5.8
0.993
-179.02
0.210
4.54
0.002
-71.85
0.974
-172.38
6
0.993
-179.10
0.197
3.73
0.002
-72.10
0.975
-172.65
To download the s-parameters in s2p format, go to the CGHV60170D Product Page and click the documentation tab.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV60170D
Die
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency
6.0
GHz
Power Output
170
W
Bare Die
-
1
Package
Table 1.
Note : Alpha characters used in frequency
1
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
www.cree.com/rf
Sarah Miller
Cree, Marketing & Export, RF Components
1.919.407.5302
Ryan Baker
Cree, Marketing, RF Components
1.919.407.7816
Tom Dekker
Cree, Sales Director, RF Components
1.919.407.5639
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CGHV60170D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf