Cree, CGHV60075D 120W, GaN HEMT DIE (Cree

CGHV60075D
75 W, 6.0 GHz, GaN HEMT Die
Cree’s
CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT). GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider bandwidths compared
to Si and GaAs transistors.
FEATURES
APPLICATIONS
• 18 dB Typical Small Signal Gain at 4 GHz
• 2-Way Private Radio
• 17 dB Typical Small Signal Gain at 6 GHz
• Broadband Amplifiers
• 65% Typical Power Added Efficiency at 4 GHz
• Cellular Infrastructure
• 60% Typical Power Added Efficiency at 6 GHz
• Test Instrumentation
• 75 W Typical PSAT
• Class A, AB, Linear amplifiers suitable
• 50 V Operation
for OFDM, W-CDMA, EDGE, CDMA
• High Breakdown Voltage
waveforms
• Up to 6 GHz Operation
Packaging Information
•
Bare die are shipped on tape or in Gel-Pak® containers.
•
Non-adhesive tacky membrane immobilizes die during
ember 2014
Rev 0.0 – Dec
shipment.
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
VDSS
150
VDC
25˚C
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Storage Temperature
TSTG
-65, +150
˚C
TJ
225
˚C
Maximum Drain Current1
IMAX
6.3
A
25˚C
Maximum Forward Gate Current
IGMAX
10
mA
25˚C
Thermal Resistance, Junction to Case (packaged)2
RθJC
2.67
˚C/W
85˚C, 41.6W Dissipation
Thermal Resistance, Junction to Case (die only)
RθJC
1.66
˚C/W
85˚C, 41.6W Dissipation
TS
320
˚C
30 seconds
Operating Junction Temperature
Mounting Temperature
Note Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
1
Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
VP
-3.8
-3.0
–2.3
V
VDS = 10 V, ID = 10 mA
Drain Current1
IDSS
8
10
–
A
VDS = 6 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
150
–
–
V
VGS = -8 V, ID = 10 mA
On Resistance
RON
–
0.28
–
Ω
VDS = 0.1 V
VG-ON
–
1.9
–
V
IGS = 10 mA
Small Signal Gain
GSS
–
17
–
dB
VDD = 50 V, IDQ = 125 mA
Saturated Power Output2,3
PSAT
–
75
–
W
VDD = 50 V, IDQ = 125 mA
η
–
60
–
%
VDD = 50 V, IDQ = 125 mA, PSAT = 75 W
IM3
–
-30
–
dBc
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 125 mA
POUT = 75 W CW
Input Capacitance
CGS
–
14.1
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
3.2
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.3
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
DC Characteristics
Gate Pinch-Off Voltage
Gate Forward Voltage
RF Characteristics
Drain Efficiency3
Intermodulation Distortion
Output Mismatch Stress
VDD = 50 V, IDQ = 125 mA,
POUT = 75 W PEP
Dynamic Characteristics
Notes:
1
Scaled from PCM data
2
PSAT is defined as IG = 1.0 mA.
3
Drain Efficiency = POUT / PDC
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
DIE Dimensions (units in microns)
Overall die size 3000 x 820 (+0/-50) microns, die thickness 100 microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/wireless.
•
Vacuum collet is the preferred method of pick-up.
•
The backside of the die is the Source (ground) contact.
•
Die back side gold plating is 5 microns thick minimum.
•
Thermosonic ball or wedge bonding are the preferred connection methods.
•
Gold wire must be used for connections.
•
Use the die label (XX-YY) for correct orientation.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - CGHV60075D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C
VDD = 50V, IDQ = 125 mA, Frequency = 2.7 GHz
Figure 2. - CGHV60075D GMAX and K Factor vs. Frequency at Tcase = 25°C
VDD = 50V, IDQ = 125 mA
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 125 mA, magnitude / angle)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.5
0.93309
-154.44
14.266
88.053
0.014402
-0.85181
0.35448
-119.95
0.6
0.93352
-158.34
11.838
83.444
0.01433
-5.2391
0.3779
-122.32
0.7
0.93452
-161.14
10.06
79.434
0.014195
-9.0268
0.40373
-124.1
0.8
0.93586
-163.24
8.7019
75.832
0.014019
-12.407
0.43075
-125.62
0.9
0.93743
-164.87
7.6297
72.531
0.013813
-15.485
0.45814
-127.01
1
0.93917
-166.17
6.761
69.468
0.013583
-18.326
0.48532
-128.36
-129.69
1.1
0.94101
-167.24
6.0431
66.6
0.013336
-20.972
0.51193
1.2
0.94292
-168.13
5.4398
63.9
0.013076
-23.449
0.5377
-131
1.3
0.94485
-168.89
4.926
61.348
0.012806
-25.779
0.56247
-132.31
1.4
0.9468
-169.55
4.4834
58.931
0.01253
-27.974
0.58611
-133.6
1.5
0.94872
-170.12
4.0987
56.635
0.012249
-30.047
0.60859
-134.86
1.6
0.95062
-170.64
3.7616
54.451
0.011966
-32.007
0.62986
-136.11
1.7
0.95247
-171.1
3.4641
52.373
0.011683
-33.861
0.64994
-137.32
1.8
0.95426
-171.51
3.2003
50.392
0.011401
-35.619
0.66885
-138.51
1.9
0.956
-171.89
2.9648
48.503
0.011122
-37.283
0.68662
-139.66
-140.77
2
0.95767
-172.24
2.7539
46.699
0.010846
-38.863
0.70331
2.1
0.95926
-172.56
2.5641
44.976
0.010574
-40.36
0.71895
-141.85
2.2
0.96079
-172.86
2.3927
43.33
0.010307
-41.781
0.73359
-142.89
2.3
0.96225
-173.14
2.2375
41.754
0.010045
-43.13
0.74731
-143.9
2.4
0.96364
-173.41
2.0963
40.247
0.0097893
-44.411
0.76014
-144.87
2.5
0.96496
-173.65
1.9677
38.802
0.0095396
-45.629
0.77216
-145.8
2.6
0.96621
-173.89
1.8502
37.416
0.0092961
-46.787
0.78341
-146.7
2.7
0.9674
-174.11
1.7425
36.087
0.0090588
-47.888
0.79393
-147.57
2.8
0.96853
-174.32
1.6437
34.811
0.0088279
-48.935
0.80379
-148.4
2.9
0.96959
-174.52
1.5528
33.584
0.0086033
-49.933
0.81303
-149.2
3
0.9706
-174.71
1.4689
32.404
0.0083851
-50.882
0.82169
-149.97
3.2
0.97246
-175.07
1.3198
30.177
0.0079668
-52.647
0.83741
-151.43
3.4
0.97412
-175.4
1.1918
28.105
0.0075724
-54.252
0.85128
-152.78
3.6
0.97561
-175.71
1.081
26.175
0.0072005
-55.712
0.86354
-154.03
3.8
0.97695
-175.99
0.98461
24.373
0.0068495
-57.041
0.87439
-155.19
4
0.97815
-176.26
0.90032
22.681
0.0065185
-58.254
0.88404
-156.27
4.2
0.97923
-176.5
0.82619
21.091
0.0062057
-59.361
0.89265
-157.28
4.4
0.9802
-176.74
0.76072
19.592
0.0059099
-60.372
0.90034
-158.21
4.6
0.98108
-176.96
0.70262
18.175
0.0056299
-61.295
0.90725
-159.09
4.8
0.98187
-177.17
0.65085
16.832
0.0053644
-62.137
0.91345
-159.91
5
0.98259
-177.36
0.60454
15.558
0.0051122
-62.903
0.91905
-160.68
5.2
0.98324
-177.55
0.56297
14.343
0.0048724
-63.603
0.92411
-161.41
5.4
0.98383
-177.73
0.52552
13.185
0.0046441
-64.237
0.9287
-162.09
5.6
0.98437
-177.91
0.49168
12.078
0.0044262
-64.81
0.93287
-162.73
5.8
0.98487
-178.07
0.46099
11.017
0.0042182
-65.327
0.93667
-163.34
6
0.98532
-178.23
0.4331
9.9987
0.0040191
-65.79
0.94015
-163.92
To download the s-parameters in s2p format, go to the CGHV60075D Product Page and click the documentation tab.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV60075D
Die
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency
6.0
GHz
Power Output
75
W
Bare Die
-
1
Package
Table 1.
Note : Alpha characters used in frequency
1
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
www.cree.com/rf
Sarah Miller
Cree, Marketing & Export, RF Components
1.919.407.5302
Ryan Baker
Cree, Marketing, RF Components
1.919.407.7816
Tom Dekker
Cree, Sales Director, RF Components
1.919.407.5639
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CGHV60075D Rev 0.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf