CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440117 PN: CGH2124 0F Typical Performance Over 2.0-2.3GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz Units Gain @ 46 dBm 13.1 14.6 15.1 15.7 dB ACLR @ 46 dBm -36.5 -34.5 -34.2 -32.0 dBc Drain Efficiency @ 46 dBm 30.5 32.7 32.9 33.8 % Note: Measured in the CGH21240F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. Features 1.8 - 2.3 GHz Operation • 15 dB Gain • -35 dBc ACLR at 40 W PAVE • 33 % Efficiency at 40 W PAVE • High Degree of DPD Correction Can be Applied 15 Rev 3.0 – May 20 • Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 115 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 60 mA 25˚C Maximum Drain Current IDMAX 24 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz RθJC 0.75 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3 85˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH21240F at PDISS = 115 W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 57.6 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 1.0 A Saturated Drain Current2 IDS 46.4 56.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 57.6 mA DC Characteristics Conditions 1 RF Characteristics5 (TC = 25˚C, F0 = 2.14 GHz unless otherwise noted) Saturated Output Power3,4 PSAT – 215 – W VDD = 28 V, IDQ = 1.0 A η – 65 – % VDD = 28 V, IDQ = 1.0 A, POUT = PSAT GSS 13.5 15 – dB VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm ACLR – -35 -30 dBc VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm η 27 33 – % VDD = 28 V, IDQ = 1.0 A, POUT = 46 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 1.0 A, POUT = 40 W CW Input Capacitance7 CGS – 172 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance7 CDS – 19.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 3.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Pulsed Drain Efficiency3 Modulated Gain 6 WCDMA Linearity6 Modulated Drain Efficiency 6 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 μS, Duty Cycle = 5 %. 4 PSAT is defined as IG = 20 mA peak. 5 Measured in CGH21240F-AMP. 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. 7 Includes package and internal matching components. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulse Performance Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.0 A, Freq = 2.14 GHz, Pulse Width = 40 μS, Duty Cycle = 5 % 80 18 Gain 70 17 16 Output Power Drain Efficiency 50 Gain 15 Output Power 40 14 30 Gain (dB) Output Power (dBm) Drain Efficiency (%) 60 13 20 12 Efficiency 10 11 0 10 0 5 10 15 20 25 30 35 40 45 Input Power (dBm) 55.0 68 54.5 66 54.0 64 53.5 62 53.0 60 Psat 52.5 52.0 2.00 Drain Efficiency 2.05 2.10 2.15 2.20 2.25 Drain Efficiency (%) Saturated Output Power (dBm) Typical Pulsed Saturated Power and Drain Efficiency vs Frequency of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.0 A, PSAT = 20 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 % 58 56 2.30 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Linear Performance 20 0 19 -2 18 -4 17 -6 16 -8 15 -10 14 -12 13 -14 Gain 12 Return Loss (dB) Linear Gain (dB) Typical Small Signal Gain and Return Loss vs Frequency of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.0 A -16 Return Loss 11 -18 10 -20 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) Typical WCDMA Performance Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. 3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 % VDS = 28 V, IDS = 1.0 A, Frequency = 2.14 GHz -29 40 -ACLR -31 35 +ACLR -33 30 -35 25 -37 20 -39 15 -41 10 -43 5 -45 Drain Efficiency (%) ACLR (dBc) Drain Efficiency 0 25 30 35 40 45 50 Output Power (dBm) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WCDMA Digital Pre-Distortion (DPD) Performance WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. Single Channel WCDMA 6.5dB PAR with CFR VDS = 28 V, IDS = 1.0 A, Frequency = 2.14 GHz -25 45 Uncorrected +ACLR Corrected -ACLR Corrected +ACLR Uncorrected Drain Eff Corrected Drain Eff 40 -35 35 -40 30 -45 25 -50 20 -55 15 -60 10 -65 5 -70 Drain Efficiency (%) ACLR (dBc) -30 Uncorrected -ACLR 0 32 34 36 38 40 42 44 46 48 Output Power (dBm) WCDMA Linearity with DPD Linearizer of the CGH21240F measured in CGH21240F-AMP Amplifier Circuit. Single Channel WCDMA 6.5dB PAR with CFR VDS = 28 V, IDS = 1.0 A, PAVE = 46 dBm, Efficiency = 30 % 0 -10 Uncorrected DPD Corrected -20 -30 -40 -50 -60 -70 -80 2.125 2.130 2.135 2.140 2.145 2.150 2.155 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Drain Efficiency (%), Output Power (dBm) Simulated Performance of the CGH21240F from 1.8 - 2.17 GHz VDD = 28 V, IDQ = 1.0 A CGH21240F Power Dissipation De-rating Curve CGH21240F Average Power Dissipation De-rating Curve 140 Power Dissipation (W) 120 100 80 Note 1 60 40 20 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH21240F VDD = 28 V, IDQ = 1.0 A Typical Noise Performance Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH21240F Rev 3.0 Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH21240F VDD = 28 V, IDQ = 1.0 A Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1900 4.50 - j 4.36 2.98 - j 0.69 1950 4.28 - j 4.23 3.17 - j 0.88 2000 4.05 - j 4.04 3.20 - j 1.22 2050 3.86 - j 3.82 2.98 - j 1.60 2100 3.69 - j 3.58 2.52 - j 1.85 2150 3.55 - j 3.32 1.95 - j 1.85 2200 3.44 - j 3.04 1.42 - j 1.63 2250 3.36 - j 2.76 1.00 - j 1.28 2300 3.30 - j 2.47 0.70 - j 0.86 Note1 VDD = 28V, IDQ = 1.0 A in the 440117 package. Note2 Impedances are extracted from CGH21240F-AMP demonstration circuit and are not source and load pull data derived from transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH21240F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 100 OHMS R2 RES, 1/16W, 0603, 1%, 5.1 OHMS 1 1 C1 CAP, 27 pF, +/-5%, ATC600S 1 C2 CAP, 2.0 pF, +/-0.1pF, ATC600S 1 C3 CAP, 10 pF, +/-5%, ATC600S 1 CAP, 470 pF, +/-5%, 100V, 0603 2 C5, C11, C16 CAP, 33000 pF, 0805, 100V, X7R 3 C6, C12, C17 CAP, 1.0 uF, +/-10%, 1210, 100V, X7R 3 CAP, 10 uF, 16V, TANTALUM 1 C4, C10 C7 C8, C14 CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC600F 2 C9, C15 CAP, 10pF, +/-0.1pF, 250V, 0805, ATC600F 2 C13 CAP 100 uF, 160V, ELECTROLYTIC 1 C18 CAP, 33 uF, +/-20%, G CASE 1 C19, C20 CAP, 39pF, +/-5%, 250V, 0805, ATC600F 2 CONN, N-Type, Female, 0.500 SMA Flange 2 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 - PCB, RO4350, Er = 3.48, h = 20 mil 1 - CGH21240F 1 J1, J2 J3 CGH21240F-AMP Demonstration Amplifier Circuit Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH21240F-AMP Demonstration Amplifier Circuit Schematic CGH21240F-AMP Demonstration Amplifier Circuit Outline Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH21240F (Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.983 179.25 1.84 66.59 0.004 -13.75 0.823 -177.25 600 MHz 0.983 178.45 1.56 61.58 0.004 -16.73 0.828 -176.89 700 MHz 0.982 177.73 1.36 56.57 0.004 -19.66 0.834 -176.58 800 MHz 0.981 177.04 1.22 51.54 0.004 -22.56 0.841 -176.31 900 MHz 0.980 176.38 1.12 46.42 0.004 -25.48 0.848 -176.07 1.0 GHz 0.978 175.72 1.04 41.17 0.004 -28.46 0.855 -175.87 1.1 GHz 0.976 175.07 0.99 35.70 0.004 -31.57 0.862 -175.71 1.2 GHz 0.974 174.42 0.95 29.94 0.004 -34.88 0.870 -175.56 1.3 GHz 0.970 173.77 0.93 23.76 0.004 -38.51 0.879 -175.44 1.4 GHz 0.966 173.13 0.92 16.98 0.005 -42.62 0.888 -175.35 1.5 GHz 0.961 172.51 0.92 9.40 0.005 -47.40 0.898 -175.28 1.6 GHz 0.954 171.95 0.93 0.77 0.005 -53.11 0.910 -175.28 1.7 GHz 0.947 171.50 0.94 -9.23 0.005 -60.04 0.925 -175.39 1.8 GHz 0.939 171.24 0.95 -20.82 0.006 -68.42 0.941 -175.71 1.9 GHz 0.933 171.20 0.94 -34.02 0.006 -78.25 0.957 -176.32 2.0 GHz 0.931 171.32 0.90 -48.37 0.006 -89.09 0.971 -177.25 2.1 GHz 0.935 171.39 0.83 -62.95 0.006 -100.00 0.979 -178.39 2.2 GHz 0.944 171.20 0.74 -76.66 0.005 -109.90 0.981 -179.50 2.3 GHz 0.954 170.68 0.64 -88.79 0.005 -118.09 0.979 179.57 2.4 GHz 0.963 169.89 0.54 -99.14 0.004 -124.40 0.974 178.85 2.5 GHz 0.971 168.91 0.46 -107.87 0.004 -128.98 0.970 178.30 2.6 GHz 0.976 167.81 0.40 -115.25 0.003 -132.17 0.966 177.87 2.7 GHz 0.981 166.63 0.34 -121.56 0.003 -134.27 0.963 177.52 2.8 GHz 0.984 165.35 0.30 -127.07 0.003 -135.56 0.960 177.20 2.9 GHz 0.986 164.00 0.26 -131.94 0.003 -136.27 0.959 176.90 3.0 GHz 0.988 162.54 0.24 -136.34 0.003 -136.57 0.957 176.61 3.2 GHz 0.990 159.26 0.19 -144.13 0.002 -136.53 0.956 176.02 3.4 GHz 0.991 155.29 0.17 -151.15 0.002 -136.31 0.955 175.41 3.6 GHz 0.991 150.30 0.15 -157.91 0.002 -136.53 0.955 174.76 3.8 GHz 0.990 143.73 0.14 -164.89 0.003 -137.70 0.954 174.06 4.0 GHz 0.988 134.60 0.13 -172.75 0.003 -140.42 0.954 173.32 4.2 GHz 0.985 121.09 0.14 177.52 0.003 -145.66 0.953 172.52 4.4 GHz 0.978 99.57 0.15 164.06 0.004 -155.19 0.952 171.66 4.6 GHz 0.968 63.52 0.16 143.65 0.005 -172.15 0.951 170.72 4.8 GHz 0.961 8.37 0.16 114.18 0.006 161.39 0.949 169.70 5.0 GHz 0.971 -49.39 0.13 83.48 0.005 133.32 0.947 168.55 5.2 GHz 0.984 -89.09 0.09 61.46 0.004 113.61 0.943 167.26 5.4 GHz 0.991 -112.76 0.06 47.31 0.003 101.50 0.939 165.81 5.6 GHz 0.995 -127.38 0.04 37.64 0.003 93.61 0.933 164.16 5.8 GHz 0.996 -137.07 0.03 30.34 0.002 87.89 0.926 162.23 6.0 GHz 0.998 -143.91 0.03 24.30 0.002 83.22 0.916 159.94 To download the s-parameters in s2p format, go to the CGH21240F Product Page and click on the documentation tab. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number CGH21240F Description GaN HEMT Each CGH21240F-AMP Test board without GaN HEMT Each CGH21240F-AMP1 Test board with GaN HEMT installed Each Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 Unit of Measure CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH21240F (Package Type — 440117) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH21240F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH21240F-TB CGH21240F-AMP Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH21240F Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGH21240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf