CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package. Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 15.1 14.7 14.3 14.3 14.5 dB EVM @ 39 dBm 2.35 2.16 2.01 2.13 2.82 % Drain Efficiency @ 39 dBm 28.3 27.6 27.3 26.7 26.3 % Input Return Loss 10.0 7.3 6.0 7.0 10.3 dB Note: Measured in the CGH27060F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 15 Rev 5.0 - May 20 Features • VHF - 3.0 GHz Operation • 14 dB Small Signal Gain • 8.0 W PAVE at < 2.0 % EVM • 27 % Drain Efficiency at 8 W Average Power • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Symbol Rating Units Drain-Source Voltage Parameter VDSS 84 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 15 mA 25˚C Maximum Drain Current IDMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz RθJC 2.8 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3 85˚C Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH27060F at PDISS = 56 W. 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.5 -3.0 -2.0 VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 28 V, IDQ = 300 mA Saturated Drain Current IDS 11.6 14.0 - A Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA DC Characteristics 1 VDS = 6.0 V, VGS = 2 V RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS 11.0 13.0 – dB VDD = 28 V, IDQ = 300 mA η 21 24 – % VDD = 28 V, IDQ = 300 mA, PAVE = 8 W Error Vector Magnitude EVM – 2.0 – Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 300 mA, PAVE = 8 W Input Capacitance CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 VDD = 28 V, IDQ = 300 mA, PAVE = 8 W Dynamic Characteristics Notes: Measured on wafer prior to packaging. Measured in the CGH27060F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. 1 2 Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 1.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH27060F-AMP, VDD = 28 V, IDQ = 300 mA 20 2 S21 18 0 S11 16 -2 14 -4 12 -6 10 -8 S11 (dB) S21 (dB) S21 -10 8 S11 6 -12 4 -14 2 -16 0 -18 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency (GHz) Figure 2.- Typical EVM at 24 dBm and 39 dBm vs Frequency measured in Broadband Amplifier Circuit CGH27060F-AMP 6.0 36% 5.5 33% 5.0 30% 4.0 EVM (%) 27% Drain Efficiency 24% 3.5 21% 3.0 18% 2.5 15% 2.0 Efficiency 4.5 12% EVM 1.5 9% EVM @ 26 dBm 1.0 6% EVM @ 39 dBm 0.5 3% Efficiency 0% 0.0 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Figure 3.- Drain Efficiency and EVM vs Output Power measured in CGH27060F-AMP VDD = 28 V, IDQ = 300 mA, 802.16-2004 OFDM, PAR = 9.8 dB 4.0 32% EVM 3.5 28% Efficiency 3.0 24% 20% Efficiency 2.0 16% 1.5 12% EVM 1.0 Efficiency EVM (%) 2.5 8% 0.5 4% 0.0 0% 22 24 26 28 30 32 Output Power (dB) 34 36 38 40 Figure 4.- Typical Gain and Efficiency versus Power Output measured in CGH27060F-AMP VDD = 28 V, IDQ = 300 mA, 802.16-2004 OFDM, PAR=9.8 dB 20 40% 19 38% 18 17 34% Drain Efficiency 32% Gain 15 30% 14 28% 13 26% 12 24% 11 22% 10 20% 9 18% Efficiency 8 16% 7 14% 6 12% 5 10% 4 8% 3 6% 2 4% 1 2% 0 Drain Efficiency 16 Gain (dB) 36% Gain 0% 22 24 26 28 30 32 34 36 38 40 Output Power (dB) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Data K Factor MAG (dB) Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH27060F VDD = 28 V, IDQ = 300 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH27015 VDD = 28 V, IDQ = 100 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 3.34 + j4.56 10.8 + j8.24 1000 2.07 + j0.05 6.18 + j4.17 2000 1.3 – j3.37 4.65 + j0.05 3000 1.64 – j8.15 4.75 – j3.4 4000 1.9 – j10.8 4.56 – j7.9 Note 1. VDD = 28V, IDQ = 300mA in the 440193 package. Note 2. Optimized for PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH27060 Power Dissipation De-rating Curve CGH40045F CW Power Dissipation De-rating Curve 60 Power Dissipation (W) 50 40 30 Note 1 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27060F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 5.1 OHMS 1 R2 RES, 1/16W, 0603, 1%, 100 OHMS 1 C6,C13,C19 CAP, 470PF, 10%,100V, 0603 3 C16,C22 CAP, 33 UF, 20%, G CASE 1 C15,C21 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 1 C8 CAP 10UF 16V TANTALUM C10 CAP, 8.2pF, +/-5%, 100B 1 C1 CAP, 0.9pF, +/-0.05pF, 0603 1 C2 CAP, 2.2pF, +/-0.1pF, 0603 1 C4,C11,C17 CAP, 10.0pF,+/-5%, 0603 3 C5,C12,C18,C30,C31 CAP, 82pF, +/-5%, 0603 5 CAP,33000PF, 0805,100V, X7R 3 CONN SMA STR PANEL JACK RECP 1 HEADER RT>PLZ .1CEN LK 9POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH27060F 1 C7,C14,C20 J2,J3 J1 CGH27060F-AMP Demonstration Amplifier Circuit Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27060F-AMP Demonstration Amplifier Circuit Schematic CGH27060F-AMP Demonstration Amplifier Circuit Outline Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH27060 (Small Signal, VDS = 28 V, IDQ = 300 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.935 -171.10 7.31 80.30 0.013 -4.81 0.629 -171.50 600 MHz 0.935 -173.48 6.08 76.43 0.013 -7.68 0.635 -171.81 700 MHz 0.936 -175.34 5.20 72.85 0.013 -10.25 0.642 -171.96 800 MHz 0.937 -176.87 4.54 69.47 0.013 -12.62 0.649 -172.04 900 MHz 0.937 -178.19 4.03 66.24 0.013 -14.82 0.656 -172.11 1.0 GHz 0.938 -179.38 3.62 63.13 0.013 -16.89 0.664 -172.18 1.1 GHz 0.939 179.54 3.28 60.12 0.013 -18.84 0.672 -172.28 1.2 GHz 0.939 178.52 3.00 57.20 0.012 -20.69 0.680 -172.42 1.3 GHz 0.940 177.55 2.77 54.36 0.012 -22.44 0.688 -172.60 1.4 GHz 0.941 176.60 2.57 51.59 0.012 -24.10 0.695 -172.83 1.5 GHz 0.942 175.68 2.39 48.89 0.012 -25.67 0.703 -173.11 1.6 GHz 0.942 174.77 2.24 46.24 0.012 -27.15 0.710 -173.42 1.7 GHz 0.943 173.87 2.11 43.66 0.012 -28.56 0.718 -173.78 1.8 GHz 0.943 172.96 2.00 41.12 0.011 -29.88 0.724 -174.18 1.9 GHz 0.944 172.04 1.90 38.63 0.011 -31.12 0.731 -174.61 2.0 GHz 0.944 171.11 1.81 36.19 0.011 -32.29 0.737 -175.07 2.1 GHz 0.944 170.16 1.73 33.78 0.011 -33.39 0.743 -175.57 2.2 GHz 0.944 169.19 1.67 31.41 0.011 -34.42 0.748 -176.10 2.3 GHz 0.945 168.19 1.61 29.06 0.011 -35.38 0.753 -176.65 2.4 GHz 0.944 167.16 1.55 26.74 0.010 -36.28 0.758 -177.23 2.5 GHz 0.944 166.10 1.51 24.43 0.010 -37.11 0.762 -177.83 2.6 GHz 0.944 165.00 1.47 22.14 0.010 -37.88 0.765 -178.45 2.7 GHz 0.944 163.85 1.43 19.85 0.010 -38.60 0.769 -179.10 2.8 GHz 0.943 162.64 1.41 17.56 0.010 -39.27 0.771 -179.77 2.9 GHz 0.942 161.38 1.38 15.27 0.010 -39.90 0.774 179.54 3.0 GHz 0.941 160.06 1.36 12.96 0.010 -40.48 0.776 178.82 3.2 GHz 0.939 157.18 1.34 8.27 0.010 -41.54 0.778 177.32 3.4 GHz 0.935 153.93 1.33 3.43 0.010 -42.52 0.779 175.73 3.6 GHz 0.931 150.21 1.34 -1.65 0.010 -43.50 0.778 174.01 3.8 GHz 0.925 145.88 1.37 -7.06 0.010 -44.60 0.774 172.17 4.0 GHz 0.916 140.74 1.43 -12.95 0.011 -45.95 0.769 170.17 4.2 GHz 0.906 134.55 1.50 -19.47 0.011 -47.77 0.760 167.98 4.4 GHz 0.891 126.90 1.61 -26.85 0.012 -50.32 0.749 165.56 4.6 GHz 0.872 117.26 1.75 -35.39 0.013 -53.96 0.733 162.84 4.8 GHz 0.848 104.85 1.92 -45.48 0.014 -59.15 0.713 159.74 5.0 GHz 0.817 88.57 2.14 -57.60 0.016 -66.44 0.688 156.11 5.2 GHz 0.784 67.16 2.37 -72.25 0.018 -76.37 0.654 151.74 5.4 GHz 0.759 39.85 2.58 -89.71 0.020 -89.30 0.609 146.35 5.6 GHz 0.757 8.00 2.70 -109.65 0.021 -104.92 0.546 139.55 5.8 GHz 0.788 -24.14 2.67 -130.98 0.022 -122.14 0.460 130.98 6.0 GHz 0.836 -52.18 2.49 -152.33 0.021 -139.60 0.347 119.94 To download the s-parameters in s2p format, go to the CGH27060F Product Page and click on the documentation tab. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH27060F (Package Type — 440193) Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH27060F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH27060F-TB CGH27060F-AMP Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH27060F Rev 5.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH27060F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf