CGH27060F, 60W, 2300-2900MHz, GaN HEMT by Cree

CGH27060F
60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz
Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities, which
makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA
amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange
package.
Package Type
: 440193
PN: CGH2706
0F
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
15.1
14.7
14.3
14.3
14.5
dB
EVM @ 39 dBm
2.35
2.16
2.01
2.13
2.82
%
Drain Efficiency @ 39 dBm
28.3
27.6
27.3
26.7
26.3
%
Input Return Loss
10.0
7.3
6.0
7.0
10.3
dB
Note:
Measured in the CGH27060F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
15
Rev 5.0 - May 20
Features
•
VHF - 3.0 GHz Operation
•
14 dB Small Signal Gain
•
8.0 W PAVE at < 2.0 % EVM
•
27 % Drain Efficiency at 8 W Average Power
•
WiMAX Fixed Access 802.16-2004 OFDM
•
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Symbol
Rating
Units
Drain-Source Voltage
Parameter
VDSS
84
Volts
Conditions
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
˚C
TSTG
-65, +150
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
15
mA
25˚C
Maximum Drain Current
IDMAX
6
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
RθJC
2.8
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3
85˚C
Note:
Current limit for long term, reliable operation
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH27060F at PDISS = 56 W.
1
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.5
-3.0
-2.0
VDC
VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDD = 28 V, IDQ = 300 mA
Saturated Drain Current
IDS
11.6
14.0
-
A
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 14.4 mA
DC Characteristics
1
VDS = 6.0 V, VGS = 2 V
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS
11.0
13.0
–
dB
VDD = 28 V, IDQ = 300 mA
η
21
24
–
%
VDD = 28 V, IDQ = 300 mA, PAVE = 8 W
Error Vector Magnitude
EVM
–
2.0
–
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 300 mA, PAVE = 8 W
Input Capacitance
CGS
–
19.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
5.9
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.8
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
VDD = 28 V, IDQ = 300 mA, PAVE = 8 W
Dynamic Characteristics
Notes:
Measured on wafer prior to packaging.
Measured in the CGH27060F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
1
2
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 1.- Gain and Return Loss vs Frequency measured in Broadband
Amplifier Circuit CGH27060F-AMP, VDD = 28 V, IDQ = 300 mA
20
2
S21
18
0
S11
16
-2
14
-4
12
-6
10
-8
S11 (dB)
S21 (dB)
S21
-10
8
S11
6
-12
4
-14
2
-16
0
-18
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Figure 2.- Typical EVM at 24 dBm and 39 dBm vs Frequency measured
in Broadband Amplifier Circuit CGH27060F-AMP
6.0
36%
5.5
33%
5.0
30%
4.0
EVM (%)
27%
Drain
Efficiency
24%
3.5
21%
3.0
18%
2.5
15%
2.0
Efficiency
4.5
12%
EVM
1.5
9%
EVM @ 26 dBm
1.0
6%
EVM @ 39 dBm
0.5
3%
Efficiency
0%
0.0
2.3
2.4
2.5
2.6
2.7
Frequency (GHz)
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Figure 3.- Drain Efficiency and EVM vs Output Power measured in CGH27060F-AMP
VDD = 28 V, IDQ = 300 mA, 802.16-2004 OFDM, PAR = 9.8 dB
4.0
32%
EVM
3.5
28%
Efficiency
3.0
24%
20%
Efficiency
2.0
16%
1.5
12%
EVM
1.0
Efficiency
EVM (%)
2.5
8%
0.5
4%
0.0
0%
22
24
26
28
30
32
Output Power (dB)
34
36
38
40
Figure 4.- Typical Gain and Efficiency versus Power Output measured in CGH27060F-AMP
VDD = 28 V, IDQ = 300 mA, 802.16-2004 OFDM, PAR=9.8 dB
20
40%
19
38%
18
17
34%
Drain Efficiency
32%
Gain
15
30%
14
28%
13
26%
12
24%
11
22%
10
20%
9
18%
Efficiency
8
16%
7
14%
6
12%
5
10%
4
8%
3
6%
2
4%
1
2%
0
Drain Efficiency
16
Gain (dB)
36%
Gain
0%
22
24
26
28
30
32
34
36
38
40
Output Power (dB)
Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst,
Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance Data
K Factor
MAG (dB)
Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH27060F
VDD = 28 V, IDQ = 300 mA
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH27015
VDD = 28 V, IDQ = 100 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
500
3.34 + j4.56
10.8 + j8.24
1000
2.07 + j0.05
6.18 + j4.17
2000
1.3 – j3.37
4.65 + j0.05
3000
1.64 – j8.15
4.75 – j3.4
4000
1.9 – j10.8
4.56 – j7.9
Note 1. VDD = 28V, IDQ = 300mA in the 440193 package.
Note 2. Optimized for PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplifier stability.
CGH27060 Power Dissipation De-rating Curve
CGH40045F CW Power Dissipation De-rating Curve
60
Power Dissipation (W)
50
40
30
Note 1
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH27060F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 5.1 OHMS
1
R2
RES, 1/16W, 0603, 1%, 100 OHMS
1
C6,C13,C19
CAP, 470PF, 10%,100V, 0603
3
C16,C22
CAP, 33 UF, 20%, G CASE
1
C15,C21
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
1
C8
CAP 10UF 16V TANTALUM
C10
CAP, 8.2pF, +/-5%, 100B
1
C1
CAP, 0.9pF, +/-0.05pF, 0603
1
C2
CAP, 2.2pF, +/-0.1pF, 0603
1
C4,C11,C17
CAP, 10.0pF,+/-5%, 0603
3
C5,C12,C18,C30,C31
CAP, 82pF, +/-5%, 0603
5
CAP,33000PF, 0805,100V, X7R
3
CONN SMA STR PANEL JACK RECP
1
HEADER RT>PLZ .1CEN LK 9POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH27060F
1
C7,C14,C20
J2,J3
J1
CGH27060F-AMP Demonstration Amplifier Circuit
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH27060F-AMP Demonstration Amplifier Circuit Schematic
CGH27060F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH27060
(Small Signal, VDS = 28 V, IDQ = 300 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.935
-171.10
7.31
80.30
0.013
-4.81
0.629
-171.50
600 MHz
0.935
-173.48
6.08
76.43
0.013
-7.68
0.635
-171.81
700 MHz
0.936
-175.34
5.20
72.85
0.013
-10.25
0.642
-171.96
800 MHz
0.937
-176.87
4.54
69.47
0.013
-12.62
0.649
-172.04
900 MHz
0.937
-178.19
4.03
66.24
0.013
-14.82
0.656
-172.11
1.0 GHz
0.938
-179.38
3.62
63.13
0.013
-16.89
0.664
-172.18
1.1 GHz
0.939
179.54
3.28
60.12
0.013
-18.84
0.672
-172.28
1.2 GHz
0.939
178.52
3.00
57.20
0.012
-20.69
0.680
-172.42
1.3 GHz
0.940
177.55
2.77
54.36
0.012
-22.44
0.688
-172.60
1.4 GHz
0.941
176.60
2.57
51.59
0.012
-24.10
0.695
-172.83
1.5 GHz
0.942
175.68
2.39
48.89
0.012
-25.67
0.703
-173.11
1.6 GHz
0.942
174.77
2.24
46.24
0.012
-27.15
0.710
-173.42
1.7 GHz
0.943
173.87
2.11
43.66
0.012
-28.56
0.718
-173.78
1.8 GHz
0.943
172.96
2.00
41.12
0.011
-29.88
0.724
-174.18
1.9 GHz
0.944
172.04
1.90
38.63
0.011
-31.12
0.731
-174.61
2.0 GHz
0.944
171.11
1.81
36.19
0.011
-32.29
0.737
-175.07
2.1 GHz
0.944
170.16
1.73
33.78
0.011
-33.39
0.743
-175.57
2.2 GHz
0.944
169.19
1.67
31.41
0.011
-34.42
0.748
-176.10
2.3 GHz
0.945
168.19
1.61
29.06
0.011
-35.38
0.753
-176.65
2.4 GHz
0.944
167.16
1.55
26.74
0.010
-36.28
0.758
-177.23
2.5 GHz
0.944
166.10
1.51
24.43
0.010
-37.11
0.762
-177.83
2.6 GHz
0.944
165.00
1.47
22.14
0.010
-37.88
0.765
-178.45
2.7 GHz
0.944
163.85
1.43
19.85
0.010
-38.60
0.769
-179.10
2.8 GHz
0.943
162.64
1.41
17.56
0.010
-39.27
0.771
-179.77
2.9 GHz
0.942
161.38
1.38
15.27
0.010
-39.90
0.774
179.54
3.0 GHz
0.941
160.06
1.36
12.96
0.010
-40.48
0.776
178.82
3.2 GHz
0.939
157.18
1.34
8.27
0.010
-41.54
0.778
177.32
3.4 GHz
0.935
153.93
1.33
3.43
0.010
-42.52
0.779
175.73
3.6 GHz
0.931
150.21
1.34
-1.65
0.010
-43.50
0.778
174.01
3.8 GHz
0.925
145.88
1.37
-7.06
0.010
-44.60
0.774
172.17
4.0 GHz
0.916
140.74
1.43
-12.95
0.011
-45.95
0.769
170.17
4.2 GHz
0.906
134.55
1.50
-19.47
0.011
-47.77
0.760
167.98
4.4 GHz
0.891
126.90
1.61
-26.85
0.012
-50.32
0.749
165.56
4.6 GHz
0.872
117.26
1.75
-35.39
0.013
-53.96
0.733
162.84
4.8 GHz
0.848
104.85
1.92
-45.48
0.014
-59.15
0.713
159.74
5.0 GHz
0.817
88.57
2.14
-57.60
0.016
-66.44
0.688
156.11
5.2 GHz
0.784
67.16
2.37
-72.25
0.018
-76.37
0.654
151.74
5.4 GHz
0.759
39.85
2.58
-89.71
0.020
-89.30
0.609
146.35
5.6 GHz
0.757
8.00
2.70
-109.65
0.021
-104.92
0.546
139.55
5.8 GHz
0.788
-24.14
2.67
-130.98
0.022
-122.14
0.460
130.98
6.0 GHz
0.836
-52.18
2.49
-152.33
0.021
-139.60
0.347
119.94
To download the s-parameters in s2p format, go to the CGH27060F Product Page and click on the documentation tab.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH27060F (Package Type ­— 440193)
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH27060F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH27060F-TB
CGH27060F-AMP
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH27060F Rev 5.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH27060F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf