CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. Package Type : 440162 and 440161 PN: CGHV221 00F and CGH V22100P Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Gain @ 44 dBm 18.7 20.7 22.0 dB ACLR @ 44 dBm -37.8 -37.1 -35.1 dBc Drain Efficiency @ 44 dBm 35.4 31.7 30.6 % Note: Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. Features 1.8 - 2.2 GHz Operation • 20 dB Gain • -35 dBc ACLR at 25 W PAVE • 31-35 % Efficiency at 25 W PAVE • High Degree of DPD Correction Can be Applied 15 Rev 2.0 – May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature3 TJ 225 ˚C Maximum Forward Gate Current IGMAX 16 mA 25˚C Maximum Drain Current1 IDMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz Thermal Resistance, Junction to Case3 RθJC 2.34 ˚C/W 85˚C, PDISS = 48 W Thermal Resistance, Junction to Case RθJC 2.95 ˚C/W 85˚C, PDISS = 48 W TC -40, +150 ˚C Screw Torque 4 Case Operating Temperature5 Note: Current limit for long term, reliable operation. Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV22100P 4 Measured for the CGHV22100F 5 See also, the Power Dissipation De-rating Curve on Page 4. 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 16 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.5 A Saturated Drain Current2 IDS 12 14.4 – A Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 16 mA DC Characteristics1 VDS = 6.0 V, VGS = 2.0 V RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted) Gain4 G 19.75 22 – dB VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm ACLR – -35 -31 dBc VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm η 26.5 30.5 – % VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.5 A, POUT = 100 W Pulsed Input Capacitance5 CGS – 66 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 8.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.47 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz WCDMA Linearity4 Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV22100-AMP 4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. 5 Includes package and internal matching components. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Return Losses vs Frequency for the Signal Gain and Return Losses vs. Frequency CGHV22100Small measured in CGHV22100-AMP Amplifierfor Circuit CGHV22100F measured in CGV22100F-TB Amplifier Circuit VDD =VDD 50 V, IDQV,=IDQ=0.5 0.5 A A = 50 30 25 20 15 Gain (dB) 10 5 0 -5 -10 -15 -20 S21 S11 -25 S22 -30 1600 1700 1800 1900 2000 2100 2200 Frequency (MHz) 2300 2400 Typical Linear Performance Figure 2. - Typical Drain Efficiency ACLRvs. vsOuput Output Power Typical Drain Efficiency and and ACLR Power of the CGHV22100 measured in CGHV22100-AMP Amplifier of the CGHV22100F measured in CGHV22100F-TB AmplifierCircuit. Circuit. V, IDD=0.5 A, , 1c WCDMA,PAR=7.5 VDS = 50 V,VDD=50 IDS = 0.5 A, 1c WCDMA, PAR = 7.5 dBdB 0 45 ACLR_2p0 -10 -15 ACLR (dBc) 40 ACLR_1p8 ACLR_2p2 EFF_1p8 35 EFF_2p0 30 EFF_2p2 -20 25 -25 20 -30 15 -35 10 -40 5 -45 30 31 32 33 34 35 36 37 38 39 Output Power (dBm) 40 41 42 43 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV22100 Rev 2.0 44 45 Efficiency (%) -5 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 50 -30 45 -31 40 -32 35 -33 EFF 30 -34 25 -35 GAIN 20 -36 ACLR 15 -37 10 -38 Gain EFF 5 0 ACLR (dBc) Gain (dB) & Drain Efficiency (%) Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency Typical Gain,Drain Efficiency and ACLR vs. Frequency of CGHV22100 measured in CGHV22100-AMP Amplifier Circuit. of the CGHV22100F measured in CGHV22100F-TB Amplifier Circuit. IDS = 0.5 A, PAVEA,=PAVE=25 25 W, 1c PAR = 7.5 VDS = 50 V, VDD=50 V, IDD=0.5 W,WCDMA, 1c WCDMA,PAR=7.5 dBdB -39 ACLR 1.8 1.9 2 Frequency (GHz) 2.1 2.2 -40 CGHV22100 Power Dissipation De-rating Curve 50 45 440161 Package 40 440162 Package 35 Power Dissipation (W) 30 Note 1 25 20 15 10 5 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1800 4.50 + j0.91 5.21 - j2.58 1900 5.20 + j1.15 5.01 - j2.09 2000 6.02 + j1.03 4.85 - j1.61 2100 6.75 + j0.42 4.70 - j1.12 2200 7.03 - j0.64 4.58 - j0.62 Note1: VDD = 50 V, IDQ = 0.5 A. In the 440162 package. Note2: Impedances are extracted from CGHV22100-AMP demonstration circuit and are not source and load pull data derived from transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV22100-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 10.0 OHMS 1 R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C4, C14, C24 CAP, 470 pF, 5%, 100 V, 0603, X 3 C6,C16, C26 CAP, 1.0 UF, 100 V, 10%, x7R, 121 3 C17, C27 C7 C1, C2, C3, C13, C23 CAP, 100 UF, 20%, 160 V, ELEC 2 CAP, 10 UF, 16 V, TANTALUM, 2312 1 CAP, 10.0 pF, 5%, 0603, ATC 5 CAP, 33000 pF, 0805, 100 V, X7R 3 CAP, 10 pF, 5%, 250 V, 0805, A 1 J1, J2 CONN, N, FEM, W/.500 SMA FLNG 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 C5, C15, C25 C11 BASEPLATE, CGH35120 PCB, CGHV22100F, RO4350 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV22100F 1 CGHV22100-AMP Demonstration Amplifier Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV22100-AMP Demonstration Amplifier Circuit Schematic CGHV22100-AMP Demonstration Amplifier Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV22100 (Package Type — 440162) Product Dimensions CGHV22100 (Package Type — 440161) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV22100F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 2.2 GHz 100 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV22100F GaN HEMT Each CGHV22100P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV22100-TB CGHV22100F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV22100 Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV22100 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf