CGHV14250, 250W, 1200-1400MHz, GaN HEMT by

CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from UHF through 1800 MHz. The package
options are ceramic/metal flange and pill package.
Package Type
: 440162, 4401
61
PN: CGHV142
50
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
1.4 GHz
Units
Output Power
365
365
350
310
330
W
Gain
18.6
18.6
18.4
17.9
18.2
dB
80
80
77
74
76
%
Drain Efficiency
Note:
Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 37 dBm.
15
Rev 1.0 – May 20
Features
•
Reference design amplifier 1.2 - 1.4 GHz Operation
•
FET Tuning range UHF through 1800 MHz
•
330 W Typical Output Power
•
18 dB Power Gain
•
77% Typical Drain Efficiency
•
<0.3 dB Pulsed Amplitude Droop
•
Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Symbol
Rating
Units
Conditions
Drain-Source Voltage
Parameter
VDSS
125
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
42
mA
25˚C
Maximum Drain Current1
IDMAX
18
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
40
in-oz
Screw Torque
CW Thermal Resistance, Junction to Case
RθJC
0.95
˚C/W
PDISS = 167 W, 65˚C
3
Pulsed Thermal Resistance, Junction to Case
RθJC
0.57
˚C/W
PDISS = 167 W, 500 µsec, 10%, 85˚C
Pulsed Thermal Resistance, Junction to Case4
RθJC
0.63
˚C/W
PDISS = 167 W, 500 µsec, 10%, 85˚C
TC
-40, +130
˚C
PDISS = 167 W, 500 µsec, 10%
3
Case Operating Temperature5
Note:
Current limit for long term, reliable operation
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
Measured for the CGHV14250P
4
Measured for the CGHV14250F
5
See also, the Power Dissipation De-rating Curve on Page 5
1
2
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 41.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 500 mA
Saturated Drain Current
IDS
31.4
37.6
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 41.8 mA
DC Characteristics (TC = 25˚C)
1
2
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Output Power
POUT
275
330
–
W
VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
Drain Efficiency
DE
63
77
–
%
VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
Power Gain
GP
–
18.2
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm
Pulsed Amplitude Droop
D
–
-0.3
–
dB
VDD = 50 V, IDQ = 500 mA
Output Mismatch Stress
VSWR
–
5:1
–
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGHV14250-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 1. - CGHV14250 Typical Sparameters
CGHV14250 Typical Sparameters
Tcase = 25°C
V,=IDQ
= 500
Vdd V
= DD
50=V,50
Idq
500
mA mA
30
20
Magnitude (dB)
10
0
-10
-20
S(2,1)
-30
S(1,1)
S(2,2)
-40
1
1.1
1.2
1.3
1.4
1.5
1.6
Frequency (GHz)
Figure 2. - CGHV14250 Typical RF Results
CGHV14250 Typical RF Results
VDD
= 50 V, I Idq
= =500
mA, PIN == 37
dBm
Vdd = 50 V,DQ
500 mA, Pin
37 dBm
Tcase==25°C,
25 degPulse
C, Pulse
Width
= 500
us,Duty
DutyCycle
Cycle = 10
Tcase
Width
= 500
µs,
10%
%
450
90
Drain Efficiency
80
Output Power (W)
350
70
Drain Efficiency
Output Power
300
250
200
60
Output Power
Output Power
50
Gain
40
Drain Efficiency
150
30
Gain
Gain
Gain
Gain
100
20
50
10
0
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
Gain (dB) & Drain Efficiency (%)
400
0
1.50
Frequency (GHz)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 3. - CGHV14250 Typical RF Results
CGHV14250 Typical RF Results
V
= 50 V, IDQ == 500
mA, Pin
PIN == 37
37dBm
dBm
Vdd
500 mA,
DD = 50 V, Idq
Tcase
=
85
deg
C,
Pulse
Width
=
500
us,
Duty
Cycle = 10
Tcase = 85°C, Pulse Width = 500 µs, Duty Cycle
10%
%
400
80
Drain Efficiency
70
Output Power (W)
300
60
Output Power
250
200
50
Output Power
Gain
40
Drain Efficiency
150
30
Gain
100
20
50
10
0
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
Gain (dB) & Drain Efficiency (%)
350
0
1.50
Frequency (GHz)
Figure 4. - CGHV14250 CW RF Results
= 500 mA, PCW
= 37 dBm, Tcase = 65°C
VDD = 50 V, IDQCGHV14250F
IN RF Results
Vdd = 50 V, Idq = 500 mA, Pin = 37 dBm, Tcase = 65 C
350
70
300
60
250
50
Output Power
200
40
150
30
Gain
100
20
Pout
50
Gain (dB) and Drain Efficiency (%)
Output Power (W)
Drain Efficiency
10
Gain
0
1.10
Drain Eff
1.15
1.20
1.25
1.30
Frequency (GHz)
1.35
1.40
1.45
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV14250 Rev 3.0
0
1.50
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
900
0.6 - j0.3
5.3 + j0.1
1000
0.7 - j0.8
4.3 +j0.8
1100
1.3 - j1.1
3.3 + j0.8
1200
1.8 - j1.1
3.0 + j0.4
1300
2.5 - j0.7
2.5 + j0.4
1400
3.4 - j0.7
2.3 + j0.1
1500
1.8 - j0.9
2.3 + j0
Note 1. VDD = 50 V, IDQ = 500 mA in the 440162 package
Note 2. Optimized for power gain, PSAT and Drain Efficiency
Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier
stability
CGHV14250F Power Dissipation De-rating Curve
Figure 4. - CGHV14250 Transient Power Dissipation De-Rating Curve
Pill - 500 µs 10%
Note 1
Flange - CW
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV14250-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 562 OHMS
1
R2
RES, 5.1 OHM, +/-1%, 1/16W, 0603
1
R3
RES, 1/16W, 0603, 1%, 4700 OHMS
1
L1
INDUCTOR, CHIP, 6.8 nH, 0603 SMT
1
CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F
2
CAP, 2.0pF, +/- 0.1pF, 0603, ATC
1
C1, C23
C2
C3, C4
CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F
2
C5,C6
CAP, 1.0pF, +/-0.05 pF, 0805, ATC 600F
2
CAP, 3.0pF, +/-0.1pF, 250V, 0805, ATC 600F
4
C11,C24
CAP, 47pF,+/-5%, 250V, 0805, ATC 600F
2
C12,C25
CAP, 100pF, +/-5%, 250V, 0805, ATC 600F
2
C13,C26
CAP, 33000PF, 0805,100V, X7R
2
CAP 10uF 16V TANTALUM
1
C7,C8,C9,C10
C14
C15,C16,C17,C18
CAP, 3.9pF, +/-0.1pF, 250V, 0805, ATC 600F
4
CAP, 1.2pF, +/-0.05pF, 0805, ATC 600F
2
C27
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C28
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
1
C19,C20
J1,J2
CONN, SMA, PANEL MOUNT JACK, FL
2
J3
HEADER RT>PLZ .1CEN LK 9POS
1
J4
CONNECTOR ; SMB, Straight, JACK,SMD
1
W1
CABLE ,18 AWG, 4.2
1
PCB, RO4350, 0.020 MIL THK, CGHV14250, 1.2-1.4GHZ
1
CGHV14250
1
Q1
CGHV14250-AMP Demonstration Amplifier Circuit
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV14250-AMP Demonstration Amplifier Circuit Outline
CGHV14250-AMP Demonstration Amplifier Circuit Schematic
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV14250F (Package Type ­— 440162)
Product Dimensions CGHV14250P (Package Type ­— 440161)
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV14250F
Type
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Type
Value
Units
1.4
GHz
250
W
F = Flanged
P = Package
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV14250F
GaN HEMT
Each
CGHV14250P
GaN HEMT
Each
Test board without GaN HEMT
Each
CGHV14250P-AMP
Test board with GaN HEMT installed
Each
CGHV14250F-AMP
Test board with GaN HEMT installed
Each
CGHV14250-TB
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV14250 Rev 3.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV14250 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf