CGH40120P - Cree, Inc

CGH40120P
120 W, RF Power GaN HEMT
Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40120P ideal for linear and compressed amplifier circuits. The transistor is
available in a metal-ceramic pill package.
Package Type
s: 440206
PN: CGH4012
0P
FEATURES
APPLICATIONS
•
Up to 2.5 GHz Operation
•
2-Way Private Radio
•
20 dB Small Signal Gain at 1.0 GHz
•
Broadband Amplifiers
•
15 dB Small Signal Gain at 2.0 GHz
•
Cellular Infrastructure
•
120 W Typical PSAT
•
Test Instrumentation
•
70 % Efficiency at PSAT
•
Class A, AB, Linear amplifiers suitable for
•
28 V Operation
15
Rev 3.0 - May 20
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
Conditions
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
30
mA
25˚C
Maximum Drain Current
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
80
in-oz
RθJC
1.32
˚C/W
TC
-40, +150
˚C
1
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3,4
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40120P at PDISS = 115 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 1.0 A
Saturated Drain Current2
IDS
23.2
28.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 28.8 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
3
Power Gain
GSS
–
15.5
–
dB
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
Power Output
POUT
–
100
–
W
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
η
–
60
–
%
VDD = 28 V, IDQ = 1.0 A, PIN = 35 dBm, Pulse Width =
100 usec, Duty Cycle = 10%
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 1.0 A,
POUT = 100 W CW
Input Capacitance
CGS
–
35.3
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
9.1
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
Output Mismatch Stress
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40120P-AMP
4
Drain Efficiency = POUT / PDC
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Gain and Input Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40120-AMP
VDD = 28 V, IDQ = 1.0 A
25
25
CGH40120F S21
20
15
15
5
10
-5
5
-15
0
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Input Return Loss (dB)
Gain (dB)
CGH40120F S11
-25
1800
Frequency (MHz)
Output Power, Drain Efficiency and PAE vs Frequency measured in
Broadband Amplifier Circuit CGH40120P-AMP
VDD = 28 V, IDQ = 1.0 A
200
100%
Output Power
Output Power (W)
160
95%
Drain Efficiency
PAE
90%
140
85%
120
80%
100
75%
80
70%
60
65%
40
60%
20
55%
0
1150
1200
1250
1300
Frequency (MHz)
1350
1400
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40120P Rev 3.0
Efficiency (%)
180
50%
1450
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
60
100%
55
90%
50
80%
45
70%
40
60%
35
50%
30
25
Output Power
40%
Associated Gain
Drain Efficiency
30%
PAE
20
20%
15
10%
10
1150
1200
1250
1300
Frequency (MHz)
1350
1400
0%
1450
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40120P Rev 3.0
Efficiency (%)
Output Power (dBm), Associated Gain (dB)
Associated Gain, Output Power, Drain Efficiency and PAE vs Frequency
measured in Broadband Amplifier Circuit CGH40120P-AMP
VDD = 28 V, IDQ = 1.0 A
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum AvailableCGH40120F
Gain and K Factor of the CGH40120
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120
VDD = 28 V, IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120P CW Power Dissipation De-rating Curve
CGH40120P Power Dissipation De-Rating Curve
120
Power Dissipation (W)
100
80
Note 1
60
40
20
0
0
25
50
75
100
125
150
Maximum Temperature (°C)
175
200
225
250
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
500
2 + j3.3
5.14 + j0.04
1000
0.81 + j0.18
4.68 - j0.26
1500
0.75 - j1.56
3.44 - j0.77
2000
0.84 - j3
2.34 - j0.95
2500
1.2 - j4.43
2.7 - j2.56
3000
1.09 - j5.9
3.06 - j3.82
Note 1. VDD = 28V, IDQ = 1.0 A in the 440193 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used
to maintain amplifier stability.
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120P-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
C1, C30
Description
Qty
CAP, 27 PF +/- 5%, 250V, 0805, ATC 600F
2
C2
CAP, 1.2 pF, +/- 0.1 pF, 0603, ATC 600S
1
C3, C4
CAP, 3.9 pF, +/- 0.1 pF, 0603, ATC 600S
2
CAP, 4.7 pF, +/- 0.1 pF, 0603, ATC 600S
2
C11, C31
C5, C6
CAP, 27pF,+/-5%, 0603, ATC 600S
2
C12, C32
CAP, 100 pF, +/- 5%, 0603, ATC 600S
2
C13, C33
CAP, 470 pF +/- 5%,100 V, 0603, Murata
2
C14, C34
CAP, CER, 33000 pF, 100V, X7R, 0805, Murata
2
C15
CAP, 10 uF, 16V, SMT, TANTALUM
1
C35
CAP, CER, 1.0 uF, 100V, +/- 10%, X7R, 1210
1
C36
CAP, 33 uF, 100V, ELECT, FK, SMD
1
C20, C21
CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F
2
C22, C23
CAP, 0.5 PF +/- 0.05 pF, 0805, ATC 600F
2
C24, C25
CAP, 1.2 PF +/- 0.1 pF, 0805, ATC 600F
2
R1
RES, 1/16W, 0603, 511 Ohms (≤5% tolerance)
1
R2
RES, 1/16W, 0603, 5.1 Ohms (≤5% tolerance)
1
L1
IND, 6.8 nH, 0603, L-14C6N8ST
1
L2
IND, FERRITE, 220 OHM, 0805, BLM21PG221SN1
1
CONN, N-Type, Female, 0.500 SMA Flange
2
J1, J2
J3
Q1
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
PCB, RO4003, Er = 3.38, h = 32 mil
1
CGH40120P
1
CGH40120P-AMP Demonstration Amplifier Circuit
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40120P-AMP Demonstration Amplifier Circuit Schematic
CGH40120P-AMP Demonstration Amplifier Circuit Outline
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH40120P
(Small Signal, VDS = 28 V, IDQ = 1.0 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.961
-177.60
4.19
80.16
0.006
13.42
0.807
-179.57
600 MHz
0.961
-178.85
3.49
77.38
0.006
15.30
0.808
-179.85
700 MHz
0.961
-179.89
2.99
74.72
0.006
17.30
0.810
179.89
800 MHz
0.961
179.22
2.61
72.16
0.007
19.36
0.811
179.66
900 MHz
0.961
178.41
2.32
69.66
0.007
21.47
0.813
179.42
1.0 GHz
0.960
177.67
2.09
67.22
0.007
23.59
0.815
179.18
1.1 GHz
0.960
176.96
1.89
64.83
0.007
25.71
0.817
178.94
1.2 GHz
0.960
176.28
1.73
62.49
0.007
27.81
0.819
178.68
1.3 GHz
0.960
175.63
1.60
60.18
0.007
29.86
0.822
178.41
1.4 GHz
0.960
174.99
1.48
57.92
0.008
31.86
0.824
178.13
1.5 GHz
0.960
174.36
1.38
55.69
0.008
33.80
0.826
177.83
1.6 GHz
0.960
173.73
1.30
53.50
0.008
35.65
0.828
177.52
1.7 GHz
0.960
173.11
1.22
51.35
0.008
37.40
0.830
177.19
1.8 GHz
0.959
172.49
1.15
49.23
0.009
39.06
0.832
176.84
1.9 GHz
0.959
171.86
1.10
47.15
0.009
40.61
0.835
176.47
2.0 GHz
0.959
171.23
1.04
45.09
0.010
42.04
0.837
176.09
2.1 GHz
0.958
170.59
0.99
43.07
0.010
43.36
0.839
175.69
2.2 GHz
0.958
169.95
0.95
41.08
0.011
44.56
0.840
175.28
2.3 GHz
0.957
169.29
0.91
39.12
0.011
45.64
0.842
174.85
2.4 GHz
0.957
168.63
0.88
37.18
0.012
46.60
0.844
174.40
2.5 GHz
0.956
167.95
0.85
35.28
0.012
47.45
0.845
173.93
2.6 GHz
0.956
167.26
0.82
33.39
0.013
48.18
0.847
173.45
2.7 GHz
0.955
166.56
0.79
31.53
0.014
48.80
0.848
172.94
2.8 GHz
0.954
165.84
0.77
29.68
0.014
49.32
0.849
172.43
2.9 GHz
0.953
165.10
0.75
27.86
0.015
49.74
0.850
171.89
3.0 GHz
0.952
164.34
0.73
26.04
0.016
50.05
0.851
171.33
3.2 GHz
0.950
162.75
0.70
22.46
0.018
50.40
0.852
170.17
3.4 GHz
0.948
161.07
0.68
18.91
0.020
50.38
0.852
168.93
3.6 GHz
0.944
159.27
0.66
15.37
0.023
50.02
0.852
167.61
3.8 GHz
0.941
157.33
0.65
11.82
0.025
49.32
0.850
166.19
4.0 GHz
0.936
155.23
0.64
8.23
0.029
48.30
0.848
164.68
4.2 GHz
0.931
152.94
0.64
4.57
0.033
46.94
0.844
163.06
4.4 GHz
0.925
150.43
0.64
0.80
0.037
45.24
0.840
161.32
4.6 GHz
0.917
147.66
0.65
-3.12
0.042
43.18
0.834
159.44
4.8 GHz
0.908
144.59
0.66
-7.23
0.048
40.72
0.826
157.41
5.0 GHz
0.896
141.14
0.68
-11.60
0.055
37.83
0.817
155.20
5.2 GHz
0.883
137.25
0.71
-16.29
0.064
34.45
0.805
152.81
5.4 GHz
0.866
132.84
0.74
-21.37
0.074
30.53
0.791
150.19
5.6 GHz
0.845
127.78
0.78
-26.94
0.086
25.97
0.774
147.33
5.8 GHz
0.820
121.95
0.83
-33.09
0.101
20.69
0.755
144.21
6.0 GHz
0.789
115.17
0.88
-39.95
0.118
14.58
0.731
140.79
To download the s-parameters in s2p format, go to the CGH40120P Product Page and click on the documentation tab.
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH40120P (Package Type —
­ 440206)
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH40120P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH40120P-TB
CGH40120P-AMP
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH40120P Rev 3.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH40120P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf