CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 5.5-8.5 GHz Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain 38 31 30 28 dB POUT @ PIN = 24 dBm 39 43 37 47 W Power Gain @ PIN = 24 dBm 22 22 22 23 dB PAE @ PIN = 24 dBm 41 43 37 45 % Features il 2012 Rev 1.1 – Apr (TC = 25˚C) Applications • 30 dB Small Signal Gain • Point to Point Radio • 40 W Typical PSAT • Communications • Operation up to 28 V • Test Instrumentation • High Breakdown Voltage • EMC Amplifier Drivers • High Temperature Operation • Size 0.142 x 0.188 x 0.004 inches Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 84 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -55, +150 ˚C ˚C TJ 225 ˚C ˚C Thermal Resistance, Junction to Case (packaged)1 RθJC 1.55 ˚C/W OQPSK, 85˚C, PDISS = 55 W Thermal Resistance, Junction to Case (packaged)1 RθJC 1.80 ˚C/W CW, 85˚C, PDISS = 77 W TS 320 ˚C Operating Junction Temperature Mounting Temperature (30 seconds) ˚C Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CPC carrier. Electrical Characteristics (Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V Gate Qui Voltage VGS(Q) – -2.7 – VDC Saturated Drain Current1 IDS 9.2 12.9 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 13.2 mA Small Signal Gain S21 – 30 – dB Power Output POUT1 – 40 – W Power Added Efficiency PAE – 40 – % VDD = 28 V, IDQ = 1200 mA GP – 22 – dB VDD = 28 V, IDQ = 1200 mA Input Return Loss S11 – 5 – dB VDD = 28 V, IDQ = 1200 mA Output Return Loss S22 – 5 – dB VDD = 28 V, IDQ = 1200 mA VSWR – 5:1 – Y No damage at all phase angles, VDD = 28 V, IDQ = 1200 mA, POUT = 25W CW DC Characteristics VDS = 10 V, ID = 13.2 mA VDD = 28 V, IDQ = 1200 mA RF Characteristics2 Power Gain Output Mismatch Stress VDD = 28 V, IDQ = 1200 mA VDD = 28 V, IDQ = 1200 mA, PIN = 24 dBm Notes: 1 Scaled from PCM data. 2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Die Dimensions (units in microns) Overall die size 3610 x 4780 (+0/-50) micron, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function 1 RF-IN RF-Input pad. Matched to 50 ohm. Description Pad Size (in) 150 x 150 Note 3 2 VG1_A Gate control for stage 1. VG ~ 2.0 - 3.5 V. 100 x 100 1,2 3 VG1_B Gate control for stage 1. VG ~ 2.0 - 3.5 V. 100 x 100 1,2 4 VD1_A Drain supply for stage 1. VD = 28 V. 100 x 100 1 5 VD1_B Drain supply for stage 1. VD = 28 V. 100 x 100 1 6 VG2_A Gate control for stage 2A. VG ~ 2.0 - 3.5 V. 100 x 100 1,3 7 VG2_B Gate control for stage 2A. VG ~ 2.0 - 3.5 V. 100 x 100 1,3 8 VD2_A Drain supply for stage 2A. VD = 28 V. – 1 9 VD2_B Drain supply for stage 2B. VD = 28 V. – 1 10 RF-Out RF-Output pad. Matched to 50 ohm. 150 x 150 3 Notes: 1 Attach bypass capacitor to pads 2-9 per application circuit. 2 VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation. 3 VG2_A and VG2_B are connected internally so it would be enough to connect either one for proper operation. 4 The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 8 mil (200 um). The RF ground pads are 100 x 200. Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_appnotes.asp • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Block Diagram Showing Additional Capacitors & Output Matching Section for Operation Over 5.5 to 8.5 GHz C2 C4 C10 Vd C9 C1 C3 Vg VG1_B RF_In VD1_B VG2_B VD2_B 1 2 2 1 VG1_A C11 VD1_A C5 VG2_A RF_Out VD2_A C7 C6 C8 C12 Designator Description Quantity C1,C2,C3,C4,C5,C6,C7,C8 CAP, 51pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V, Ni/ Au TERMINATION 8 CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V, Ni/Au TERMINATION 4 C9,C10,C11,C12 Notes: 1 The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 2 The MMIC die and capacitors should be connected with 2 mil gold bond wires. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Simulated Performance of the CMPA5585025D Small Signal Gain Output Power & PAE vs Frequency vs Frequency CMPA5585025D Small Signal Response, CMPA5585025D Output Power and Power Added Efficiency vs. Frequency VDD = 28VDDV, I = 1.2 A V = 28 V, IDQ = 1.2 A, PIN = 24 dBm =28V, DQ IDQ=1.2A DD I =1.2A, Pin=24dBm V =28V, 60 20 20 50 0 0 S21 -20 -20 S11 DD 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -40 13.0 Frequency (GHz) 60 POUT 50 40 40 PAE Pout 30 30 PAE S22 -40 DQ 20 4.0 5.0 6.0 7.0 8.0 9.0 20 10.0 Frequency (GHz) Associated Gain vs Frequency CMPA5585025D Associated Gain vs. Frequency VDD = 28 V,VDDI=28V, = 1.2 A, PIN = 24 dBm DQ IDQ=1.2A, Pin=24dBm 30 Associated Gain (dB) 25 20 15 10 5 0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Frequency (GHz) Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless PAE (%) 40 Output Power (dBm) 40 S11 (dB), S22 (dB) S21 (dB) Part Number System CMPA5585025D Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 5.5 GHz Upper Frequency1 8.5 GHz Power Output 25 W Bare Die - Package Table 1. Note : Alpha characters used in frequency 1 code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA5585025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless