CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J 006D FEATURES APPLICATIONS • 17 dB Typ. Small Signal Gain at 10 GHz • Satellite Communications • 60% Typ. PAE at 10 GHz • PTP Communications Links • 6 W Typical Psat • Marine Radar • 40 V Operation • Pleasure Craft Radar • Up to 18GHz Operation • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • • Bare die are shipped in Gel-Pak® containers or on tape. Non-adhesive tacky membrane immobilizes die during ust 2014 Rev 0. – Aug shipment. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 100 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 1.2 mA 25˚C Maximum Drain Current1 IDMAX 0.8 A 25˚C Thermal Resistance, Junction to Case (packaged)2 RθJC 17.5 ˚C/W 85˚C Thermal Resistance, Junction to Case (die only) RθJC 13.2 ˚C/W 85˚C TS 320 ˚C 30 seconds 2 Mounting Temperature Note1 Current limit for long term reliable operation. Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CMC carrier. Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage V(GS)TH -3.8 -3.0 –2.3 V VDS = 10 V, ID = 1.2 mA Gate Quiescent Voltage V(GS)Q – -2.7 – VDC VDD = 40 V, IDQ = 70 mA Saturated Drain Current1 ISAT 1.0 1.1 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID =1.2 mA On Resistance RON – 2.3 – Ω VDS = 0.1 V, VGS = 0 V VG-ON – 1.85 – V IGS = 1.2 mA Small Signal Gain GSS – 17 – dB VDD = 40 V, IDQ = 70 mA Saturated Power Output1 PSAT – 6 – W VDD = 40 V, IDQ = 70 mA η – 60 – % VDD = 40 V, IDQ = 70 mA IM3 – -30 – dBc VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 40 V, IDQ = 70 mA, POUT = 6 W CW Input Capacitance CGS – 2.0 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 0.35 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.5 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz DC Characteristics Gate Forward Voltage RF Characteristics Drain Efficiency2 Intermodulation Distortion Output Mismatch Stress VDD = 40 V, IDQ = 70 mA, POUT = 6 W PEP Dynamic Characteristics Notes: 1 Scaled from PCM unit cell. 1 PSAT is defined as IG = 0.12 mA. 2 Drain Efficiency = POUT / PDC Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Die Dimensions (units in microns) Overall die size 800 x 840 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Size (microns) Drain 200 x 100 Gate 200 x 100 Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_documents.asp • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Gmax and K Factor CGHV1J006D G40V4 1.2mm die; Vdd Vdd=40 =40 volts, Idq Idq=30 =30 mA K Factor G Max (dB) Figure 1. CGHV1J006D - Stability with Gmax and K Factor VDD = 40 V, IDS = 30 mA CGHV1J006D G40V4 1.2mm die; Vdd=40 Vdd=40 volts, Idq=60 Idq=60 mA Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV1J006D Rev 0.6 K Factor G Max (dB) Figure 2. CGHV1J006D - Stability with Gmax and K Factor VDD = 40 V, IDS = 60 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances Frequency (GHz) Source Impedance (ohms) Load Impedance (ohms) Series Gate Stability Resistor (ohms) 1.0 2.0 33.5 + j43.4 136.8 + j99 28.0 14.8 + j19.9 66.1 + j103.5 13.0 3.0 8.92 + j13.2 36.3 + j81.3 7.80 4.0 7.28 + j9.64 25 + j69.1 5.40 5.0 6.25 + j7.2 19.1 + j58 3.90 6.0 5.4 + j5.2 13.47 + j49.5 2.80 7.0 4.9 + j3.54 11 + j43.4 2.05 8.0 4.67 + j2.39 9.84 + j38.5 1.60 9.0 4 + j1.21 8.76 + j34.2 1.10 10.0 3.56 + j0.155 7.93 + j30.75 0.73 11.0 3.2 – j0.226 7.68 + j27.87 0.40 12.0 1.7 – j0.35 7.36 + j24.8 0.15 13.0 1.68 – j1.27 6.76 + j23 0 14.0 1.73 – j2.18 5.59 +j20.5 0 15.0 1.99 – j3.04 4.88 + j18.76 0 16.0 2.41 – j3.89 4.27 + j17.11 0 17.0 1.72 – j4.84 3.9 + j15.26 0 18.0 2.1 – j5.71 3.4 + j14 0 Table 1. Note: VDD = 40 V, IDQ = 45 mA. Figure 3. CGHV1J006D - Power Gain, Output Power and Drain Efficiency using Source and Load Pull Impedances (Series gate stability resistor values chosen to make K>1) Power Gain (dB), Output Power (W), Drain Efficiency (%) 70 60 50 Power Gain, dB 40 Output Power, Watts Drain Efficiency, % 30 20 10 0 1 2 3 4 5 6 7 8 9 10 11 Frequency (GHz) 12 13 14 15 16 Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV1J006D Rev 0.6 17 18 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical S-Parameters for CGHV1J006D (Small Signal, VDS = 40 V, IDQ = 30 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.987 -38.19 15.03 156.70 0.013 67.25 0.827 -13.92 1.00 GHz 0.962 -69.56 12.91 137.32 0.022 48.44 0.769 -25.11 1.50 GHz 0.940 -92.69 10.74 122.53 0.027 34.21 0.717 -33.51 2.00 GHz 0.925 -109.31 8.96 111.22 0.030 23.46 0.681 -40.24 2.50 GHz 0.915 -121.46 7.56 102.25 0.032 15.04 0.660 -46.13 3.00 GHz 0.910 -130.61 6.48 94.83 0.033 8.18 0.649 -51.59 3.50 GHz 0.906 -137.71 5.63 88.46 0.033 2.38 0.646 -56.81 4.00 GHz 0.904 -143.40 4.95 82.85 0.033 -2.67 0.647 -61.83 4.50 GHz 0.903 -148.06 4.39 77.79 0.033 -7.17 0.651 -66.69 5.00 GHz 0.903 -151.98 3.93 73.16 0.033 -11.24 0.658 -71.37 5.50 GHz 0.903 -155.34 3.54 68.86 0.032 -14.97 0.666 -75.87 6.00 GHz 0.904 -158.26 3.21 64.84 0.032 -18.42 0.675 -80.19 6.50 GHz 0.904 -160.85 2.93 61.05 0.031 -21.64 0.685 -84.33 7.00 GHz 0.905 -163.18 2.68 57.46 0.030 -24.66 0.695 -88.30 7.50 GHz 0.906 -165.28 2.47 54.05 0.030 -27.50 0.706 -92.09 8.00 GHz 0.908 -167.22 2.27 50.79 0.029 -30.19 0.716 -95.71 8.50 GHz 0.909 -169.00 2.11 47.66 0.028 -32.73 0.726 -99.18 9.00 GHz 0.910 -170.67 1.95 44.67 0.027 -35.14 0.736 -102.49 9.50 GHz 0.911 -172.24 1.82 41.78 0.027 -37.44 0.746 -105.65 10.00 GHz 0.912 -173.72 1.70 39.01 0.026 -39.63 0.755 -108.67 10.50 GHz 0.914 -175.12 1.59 36.33 0.025 -41.71 0.764 -111.56 11.00 GHz 0.915 -176.47 1.49 33.74 0.024 -43.70 0.773 -114.33 11.50 GHz 0.916 -177.75 1.40 31.23 0.024 -45.60 0.781 -116.99 12.00 GHz 0.917 -179.00 1.31 28.80 0.023 -47.41 0.788 -119.53 12.50 GHz 0.918 179.80 1.24 26.45 0.022 -49.15 0.796 -121.97 13.00 GHz 0.919 178.64 1.17 24.16 0.021 -50.81 0.803 -124.31 13.50 GHz 0.920 177.51 1.10 21.94 0.021 -52.40 0.809 -126.57 14.00 GHz 0.921 176.41 1.05 19.78 0.020 -53.91 0.816 -128.74 14.50 GHz 0.922 175.33 0.99 17.67 0.019 -55.37 0.822 -130.82 15.00 GHz 0.922 174.27 0.94 15.62 0.019 -56.75 0.827 -132.84 15.25 GHz 0.923 173.75 0.92 14.61 0.018 -57.42 0.830 -133.82 15.50 GHz 0.923 173.24 0.90 13.62 0.018 -58.08 0.833 -134.78 15.75 GHz 0.923 172.73 0.87 12.64 0.017 -58.71 0.835 -135.73 16.00 GHz 0.924 172.22 0.85 11.66 0.017 -59.34 0.838 -136.66 16.25 GHz 0.924 171.72 0.83 10.70 0.017 -59.95 0.840 -137.57 16.50 GHz 0.924 171.22 0.81 9.75 0.016 -60.54 0.843 -138.47 16.75 GHz 0.925 170.72 0.79 8.81 0.016 -61.12 0.845 -139.36 17.00 GHz 0.925 170.23 0.78 7.88 0.016 -61.68 0.847 -140.23 17.25 GHz 0.925 169.74 0.76 6.96 0.015 -62.23 0.849 -141.09 17.50 GHz 0.926 169.26 0.74 6.05 0.015 -62.77 0.851 -141.93 17.75 GHz 0.926 168.77 0.72 5.15 0.015 -63.29 0.853 -142.76 18.00 GHz 0.926 168.29 0.71 4.26 0.015 -63.79 0.855 -143.58 To download the s-parameters in s2p format, go to the CGHV1J006D Product Page and click on the documentation tab. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical S-Parameters for CGHV1J006D (Small Signal, VDS = 40 V, IDQ = 60 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.984 -43.78 18.23 153.94 0.012 64.52 0.776 -15.67 1.00 GHz 0.956 -77.79 15.10 133.43 0.020 44.60 0.706 -27.34 1.50 GHz 0.935 -101.29 12.21 118.66 0.025 30.42 0.650 -35.52 2.00 GHz 0.922 -117.38 9.99 107.78 0.027 20.12 0.616 -41.92 2.50 GHz 0.914 -128.78 8.34 99.30 0.028 12.23 0.598 -47.57 3.00 GHz 0.909 -137.20 7.10 92.33 0.029 5.85 0.590 -52.89 3.50 GHz 0.906 -143.67 6.14 86.37 0.029 0.48 0.590 -58.01 4.00 GHz 0.905 -148.80 5.38 81.10 0.029 -4.20 0.594 -62.98 4.50 GHz 0.904 -153.01 4.76 76.33 0.028 -8.37 0.601 -67.78 5.00 GHz 0.904 -156.53 4.26 71.95 0.028 -12.16 0.610 -72.42 5.50 GHz 0.905 -159.55 3.84 67.88 0.028 -15.63 0.620 -76.88 6.00 GHz 0.905 -162.19 3.48 64.05 0.027 -18.86 0.631 -81.15 6.50 GHz 0.906 -164.52 3.17 60.43 0.027 -21.87 0.643 -85.25 7.00 GHz 0.907 -166.62 2.90 56.99 0.026 -24.70 0.655 -89.17 7.50 GHz 0.908 -168.54 2.67 53.70 0.025 -27.38 0.667 -92.91 8.00 GHz 0.909 -170.29 2.46 50.56 0.025 -29.90 0.679 -96.48 8.50 GHz 0.910 -171.92 2.28 47.54 0.024 -32.30 0.691 -99.90 9.00 GHz 0.912 -173.45 2.12 44.63 0.023 -34.58 0.702 -103.16 9.50 GHz 0.913 -174.89 1.97 41.83 0.023 -36.75 0.713 -106.27 10.00 GHz 0.914 -176.25 1.84 39.12 0.022 -38.81 0.724 -109.25 10.50 GHz 0.915 -177.55 1.72 36.51 0.021 -40.78 0.734 -112.10 11.00 GHz 0.916 -178.80 1.62 33.97 0.021 -42.65 0.744 -114.83 11.50 GHz 0.917 180.00 1.52 31.52 0.020 -44.44 0.753 -117.45 12.00 GHz 0.918 178.84 1.43 29.14 0.019 -46.14 0.762 -119.96 12.50 GHz 0.919 177.72 1.35 26.82 0.019 -47.77 0.770 -122.37 13.00 GHz 0.920 176.62 1.27 24.57 0.018 -49.31 0.778 -124.68 13.50 GHz 0.921 175.56 1.20 22.38 0.017 -50.79 0.786 -126.90 14.00 GHz 0.922 174.52 1.14 20.25 0.017 -52.19 0.793 -129.05 14.50 GHz 0.922 173.49 1.08 18.16 0.016 -53.52 0.800 -131.11 15.00 GHz 0.923 172.49 1.03 16.13 0.015 -54.78 0.806 -133.10 15.25 GHz 0.923 172.00 1.00 15.14 0.015 -55.38 0.810 -134.07 15.50 GHz 0.924 171.51 0.98 14.15 0.015 -55.97 0.813 -135.02 15.75 GHz 0.924 171.02 0.95 13.18 0.015 -56.53 0.816 -135.96 16.00 GHz 0.924 170.54 0.93 12.21 0.014 -57.09 0.818 -136.88 16.25 GHz 0.925 170.06 0.91 11.26 0.014 -57.62 0.821 -137.79 16.50 GHz 0.925 169.58 0.89 10.32 0.014 -58.13 0.824 -138.68 16.75 GHz 0.925 169.11 0.87 9.38 0.013 -58.63 0.827 -139.55 17.00 GHz 0.926 168.63 0.85 8.46 0.013 -59.11 0.829 -140.42 17.25 GHz 0.926 168.16 0.83 7.54 0.013 -59.57 0.832 -141.27 17.50 GHz 0.926 167.70 0.81 6.64 0.012 -60.02 0.834 -142.10 17.75 GHz 0.926 167.23 0.79 5.74 0.012 -60.44 0.836 -142.93 18.00 GHz 0.927 166.77 0.78 4.86 0.012 -60.84 0.839 -143.74 To download the s-parameters in s2p format, go to the CGHV1J006D Product Page and click on the documentation tab. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV1J006D Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage HEMT Product Line Parameter Value Units Lower Frequency DC GHz Upper Frequency 18.0 GHz 6 W Bare Die - 1 Power Output Package Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Cree, Marketing, RF Components 1.919.407.7816 Tom Dekker Cree, Sales Director, RF Components 1.919.313.5639 Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV1J006D Rev 0.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf