Data Sheet - Cree, Inc

CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm
gate length fabrication process. This GaN-on-SiC product offers superior high
frequency, high efficiency features. It is ideal for a variety of applications
operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J
006D
FEATURES
APPLICATIONS
• 17 dB Typ. Small Signal Gain at 10 GHz
• Satellite Communications
• 60% Typ. PAE at 10 GHz
• PTP Communications Links
• 6 W Typical Psat
• Marine Radar
• 40 V Operation
• Pleasure Craft Radar
• Up to 18GHz Operation
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers
Packaging Information
•
•
Bare die are shipped in Gel-Pak® containers or on tape.
Non-adhesive tacky membrane immobilizes die during
ust 2014
Rev 0. – Aug
shipment.
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
VDSS
100
VDC
25˚C
Gate-source Voltage
VGS
-10, +2
VDC
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
1.2
mA
25˚C
Maximum Drain Current1
IDMAX
0.8
A
25˚C
Thermal Resistance, Junction to Case (packaged)2
RθJC
17.5
˚C/W
85˚C
Thermal Resistance, Junction to Case (die only)
RθJC
13.2
˚C/W
85˚C
TS
320
˚C
30 seconds
2
Mounting Temperature
Note1 Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CMC carrier.
Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
V(GS)TH
-3.8
-3.0
–2.3
V
VDS = 10 V, ID = 1.2 mA
Gate Quiescent Voltage
V(GS)Q
–
-2.7
–
VDC
VDD = 40 V, IDQ = 70 mA
Saturated Drain Current1
ISAT
1.0
1.1
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
100
–
–
V
VGS = -8 V, ID =1.2 mA
On Resistance
RON
–
2.3
–
Ω
VDS = 0.1 V, VGS = 0 V
VG-ON
–
1.85
–
V
IGS = 1.2 mA
Small Signal Gain
GSS
–
17
–
dB
VDD = 40 V, IDQ = 70 mA
Saturated Power Output1
PSAT
–
6
–
W
VDD = 40 V, IDQ = 70 mA
η
–
60
–
%
VDD = 40 V, IDQ = 70 mA
IM3
–
-30
–
dBc
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 40 V, IDQ = 70 mA,
POUT = 6 W CW
Input Capacitance
CGS
–
2.0
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
0.35
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.5
–
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
DC Characteristics
Gate Forward Voltage
RF Characteristics
Drain Efficiency2
Intermodulation Distortion
Output Mismatch Stress
VDD = 40 V, IDQ = 70 mA, POUT = 6 W PEP
Dynamic Characteristics
Notes:
1
Scaled from PCM unit cell.
1
PSAT is defined as IG = 0.12 mA.
2
Drain Efficiency = POUT / PDC
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Die Dimensions (units in microns)
Overall die size 800 x 840 (+0/-50) microns, die thickness 100 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad
Size (microns)
Drain
200 x 100
Gate
200 x 100
Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_documents.asp
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Gmax and K Factor
CGHV1J006D G40V4 1.2mm die; Vdd
Vdd=40
=40 volts, Idq
Idq=30
=30 mA
K Factor
G Max (dB)
Figure 1. CGHV1J006D - Stability with Gmax and K Factor
VDD = 40 V, IDS = 30 mA
CGHV1J006D G40V4 1.2mm die; Vdd=40
Vdd=40 volts, Idq=60
Idq=60 mA
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CGHV1J006D Rev 0.6
K Factor
G Max (dB)
Figure 2. CGHV1J006D - Stability with Gmax and K Factor
VDD = 40 V, IDS = 60 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
Frequency
(GHz)
Source Impedance
(ohms)
Load Impedance
(ohms)
Series Gate Stability Resistor
(ohms)
1.0
2.0
33.5 + j43.4
136.8 + j99
28.0
14.8 + j19.9
66.1 + j103.5
13.0
3.0
8.92 + j13.2
36.3 + j81.3
7.80
4.0
7.28 + j9.64
25 + j69.1
5.40
5.0
6.25 + j7.2
19.1 + j58
3.90
6.0
5.4 + j5.2
13.47 + j49.5
2.80
7.0
4.9 + j3.54
11 + j43.4
2.05
8.0
4.67 + j2.39
9.84 + j38.5
1.60
9.0
4 + j1.21
8.76 + j34.2
1.10
10.0
3.56 + j0.155
7.93 + j30.75
0.73
11.0
3.2 – j0.226
7.68 + j27.87
0.40
12.0
1.7 – j0.35
7.36 + j24.8
0.15
13.0
1.68 – j1.27
6.76 + j23
0
14.0
1.73 – j2.18
5.59 +j20.5
0
15.0
1.99 – j3.04
4.88 + j18.76
0
16.0
2.41 – j3.89
4.27 + j17.11
0
17.0
1.72 – j4.84
3.9 + j15.26
0
18.0
2.1 – j5.71
3.4 + j14
0
Table 1.
Note: VDD = 40 V, IDQ = 45 mA.
Figure 3. CGHV1J006D - Power Gain, Output Power and Drain Efficiency using
Source and Load Pull Impedances (Series gate stability resistor values chosen to make K>1)
Power Gain (dB), Output Power (W), Drain Efficiency (%)
70
60
50
Power Gain, dB
40
Output Power, Watts
Drain Efficiency, %
30
20
10
0
1
2
3
4
5
6
7
8
9
10
11
Frequency (GHz)
12
13
14
15
16
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CGHV1J006D Rev 0.6
17
18
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical S-Parameters for CGHV1J006D
(Small Signal, VDS = 40 V, IDQ = 30 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.987
-38.19
15.03
156.70
0.013
67.25
0.827
-13.92
1.00 GHz
0.962
-69.56
12.91
137.32
0.022
48.44
0.769
-25.11
1.50 GHz
0.940
-92.69
10.74
122.53
0.027
34.21
0.717
-33.51
2.00 GHz
0.925
-109.31
8.96
111.22
0.030
23.46
0.681
-40.24
2.50 GHz
0.915
-121.46
7.56
102.25
0.032
15.04
0.660
-46.13
3.00 GHz
0.910
-130.61
6.48
94.83
0.033
8.18
0.649
-51.59
3.50 GHz
0.906
-137.71
5.63
88.46
0.033
2.38
0.646
-56.81
4.00 GHz
0.904
-143.40
4.95
82.85
0.033
-2.67
0.647
-61.83
4.50 GHz
0.903
-148.06
4.39
77.79
0.033
-7.17
0.651
-66.69
5.00 GHz
0.903
-151.98
3.93
73.16
0.033
-11.24
0.658
-71.37
5.50 GHz
0.903
-155.34
3.54
68.86
0.032
-14.97
0.666
-75.87
6.00 GHz
0.904
-158.26
3.21
64.84
0.032
-18.42
0.675
-80.19
6.50 GHz
0.904
-160.85
2.93
61.05
0.031
-21.64
0.685
-84.33
7.00 GHz
0.905
-163.18
2.68
57.46
0.030
-24.66
0.695
-88.30
7.50 GHz
0.906
-165.28
2.47
54.05
0.030
-27.50
0.706
-92.09
8.00 GHz
0.908
-167.22
2.27
50.79
0.029
-30.19
0.716
-95.71
8.50 GHz
0.909
-169.00
2.11
47.66
0.028
-32.73
0.726
-99.18
9.00 GHz
0.910
-170.67
1.95
44.67
0.027
-35.14
0.736
-102.49
9.50 GHz
0.911
-172.24
1.82
41.78
0.027
-37.44
0.746
-105.65
10.00 GHz
0.912
-173.72
1.70
39.01
0.026
-39.63
0.755
-108.67
10.50 GHz
0.914
-175.12
1.59
36.33
0.025
-41.71
0.764
-111.56
11.00 GHz
0.915
-176.47
1.49
33.74
0.024
-43.70
0.773
-114.33
11.50 GHz
0.916
-177.75
1.40
31.23
0.024
-45.60
0.781
-116.99
12.00 GHz
0.917
-179.00
1.31
28.80
0.023
-47.41
0.788
-119.53
12.50 GHz
0.918
179.80
1.24
26.45
0.022
-49.15
0.796
-121.97
13.00 GHz
0.919
178.64
1.17
24.16
0.021
-50.81
0.803
-124.31
13.50 GHz
0.920
177.51
1.10
21.94
0.021
-52.40
0.809
-126.57
14.00 GHz
0.921
176.41
1.05
19.78
0.020
-53.91
0.816
-128.74
14.50 GHz
0.922
175.33
0.99
17.67
0.019
-55.37
0.822
-130.82
15.00 GHz
0.922
174.27
0.94
15.62
0.019
-56.75
0.827
-132.84
15.25 GHz
0.923
173.75
0.92
14.61
0.018
-57.42
0.830
-133.82
15.50 GHz
0.923
173.24
0.90
13.62
0.018
-58.08
0.833
-134.78
15.75 GHz
0.923
172.73
0.87
12.64
0.017
-58.71
0.835
-135.73
16.00 GHz
0.924
172.22
0.85
11.66
0.017
-59.34
0.838
-136.66
16.25 GHz
0.924
171.72
0.83
10.70
0.017
-59.95
0.840
-137.57
16.50 GHz
0.924
171.22
0.81
9.75
0.016
-60.54
0.843
-138.47
16.75 GHz
0.925
170.72
0.79
8.81
0.016
-61.12
0.845
-139.36
17.00 GHz
0.925
170.23
0.78
7.88
0.016
-61.68
0.847
-140.23
17.25 GHz
0.925
169.74
0.76
6.96
0.015
-62.23
0.849
-141.09
17.50 GHz
0.926
169.26
0.74
6.05
0.015
-62.77
0.851
-141.93
17.75 GHz
0.926
168.77
0.72
5.15
0.015
-63.29
0.853
-142.76
18.00 GHz
0.926
168.29
0.71
4.26
0.015
-63.79
0.855
-143.58
To download the s-parameters in s2p format, go to the CGHV1J006D Product Page and click on the documentation tab.
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical S-Parameters for CGHV1J006D
(Small Signal, VDS = 40 V, IDQ = 60 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.984
-43.78
18.23
153.94
0.012
64.52
0.776
-15.67
1.00 GHz
0.956
-77.79
15.10
133.43
0.020
44.60
0.706
-27.34
1.50 GHz
0.935
-101.29
12.21
118.66
0.025
30.42
0.650
-35.52
2.00 GHz
0.922
-117.38
9.99
107.78
0.027
20.12
0.616
-41.92
2.50 GHz
0.914
-128.78
8.34
99.30
0.028
12.23
0.598
-47.57
3.00 GHz
0.909
-137.20
7.10
92.33
0.029
5.85
0.590
-52.89
3.50 GHz
0.906
-143.67
6.14
86.37
0.029
0.48
0.590
-58.01
4.00 GHz
0.905
-148.80
5.38
81.10
0.029
-4.20
0.594
-62.98
4.50 GHz
0.904
-153.01
4.76
76.33
0.028
-8.37
0.601
-67.78
5.00 GHz
0.904
-156.53
4.26
71.95
0.028
-12.16
0.610
-72.42
5.50 GHz
0.905
-159.55
3.84
67.88
0.028
-15.63
0.620
-76.88
6.00 GHz
0.905
-162.19
3.48
64.05
0.027
-18.86
0.631
-81.15
6.50 GHz
0.906
-164.52
3.17
60.43
0.027
-21.87
0.643
-85.25
7.00 GHz
0.907
-166.62
2.90
56.99
0.026
-24.70
0.655
-89.17
7.50 GHz
0.908
-168.54
2.67
53.70
0.025
-27.38
0.667
-92.91
8.00 GHz
0.909
-170.29
2.46
50.56
0.025
-29.90
0.679
-96.48
8.50 GHz
0.910
-171.92
2.28
47.54
0.024
-32.30
0.691
-99.90
9.00 GHz
0.912
-173.45
2.12
44.63
0.023
-34.58
0.702
-103.16
9.50 GHz
0.913
-174.89
1.97
41.83
0.023
-36.75
0.713
-106.27
10.00 GHz
0.914
-176.25
1.84
39.12
0.022
-38.81
0.724
-109.25
10.50 GHz
0.915
-177.55
1.72
36.51
0.021
-40.78
0.734
-112.10
11.00 GHz
0.916
-178.80
1.62
33.97
0.021
-42.65
0.744
-114.83
11.50 GHz
0.917
180.00
1.52
31.52
0.020
-44.44
0.753
-117.45
12.00 GHz
0.918
178.84
1.43
29.14
0.019
-46.14
0.762
-119.96
12.50 GHz
0.919
177.72
1.35
26.82
0.019
-47.77
0.770
-122.37
13.00 GHz
0.920
176.62
1.27
24.57
0.018
-49.31
0.778
-124.68
13.50 GHz
0.921
175.56
1.20
22.38
0.017
-50.79
0.786
-126.90
14.00 GHz
0.922
174.52
1.14
20.25
0.017
-52.19
0.793
-129.05
14.50 GHz
0.922
173.49
1.08
18.16
0.016
-53.52
0.800
-131.11
15.00 GHz
0.923
172.49
1.03
16.13
0.015
-54.78
0.806
-133.10
15.25 GHz
0.923
172.00
1.00
15.14
0.015
-55.38
0.810
-134.07
15.50 GHz
0.924
171.51
0.98
14.15
0.015
-55.97
0.813
-135.02
15.75 GHz
0.924
171.02
0.95
13.18
0.015
-56.53
0.816
-135.96
16.00 GHz
0.924
170.54
0.93
12.21
0.014
-57.09
0.818
-136.88
16.25 GHz
0.925
170.06
0.91
11.26
0.014
-57.62
0.821
-137.79
16.50 GHz
0.925
169.58
0.89
10.32
0.014
-58.13
0.824
-138.68
16.75 GHz
0.925
169.11
0.87
9.38
0.013
-58.63
0.827
-139.55
17.00 GHz
0.926
168.63
0.85
8.46
0.013
-59.11
0.829
-140.42
17.25 GHz
0.926
168.16
0.83
7.54
0.013
-59.57
0.832
-141.27
17.50 GHz
0.926
167.70
0.81
6.64
0.012
-60.02
0.834
-142.10
17.75 GHz
0.926
167.23
0.79
5.74
0.012
-60.44
0.836
-142.93
18.00 GHz
0.927
166.77
0.78
4.86
0.012
-60.84
0.839
-143.74
To download the s-parameters in s2p format, go to the CGHV1J006D Product Page and click on the documentation tab.
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV1J006D
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage HEMT Product Line
Parameter
Value
Units
Lower Frequency
DC
GHz
Upper Frequency
18.0
GHz
6
W
Bare Die
-
1
Power Output
Package
Table 1.
Note1: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
8
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Cree, Marketing, RF Components
1.919.407.7816
Tom Dekker
Cree, Sales Director, RF Components
1.919.313.5639
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
9
CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf