CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. PN: CMPA2735 075F Package Type : 780019 Typical Performance Over 2.7-3.5 GHz (TC = 25˚C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain 27 29 29 28 27 dB Saturated Output Power, PSAT1 59 76 89 90 83 W Power Gain @ P 21 23 24 24 23 dB 43 54 56 56 56 % 1 SAT PAE @ PSAT1 Note : PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. 1 Features • 27 dB Small Signal Gain • 80 W Typical PSAT Applications • Civil and Military Pulsed Radar Amplifiers • Operation up to 28 V • High Breakdown Voltage 15 Rev 2.0 – May 20 • High Temperature Operation • 0.5” x 0.5” Total Product Size Figure 1. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 84 VDC 25°C Gate-source Voltage VGS -10, +2 VDC 25°C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IG 28 mA Screw Torque T 40 in-oz RθJC 2.5 ˚C/W Thermal Resistance, Junction to Case (packaged)1 25°C 300 μsec, 20%, 85°C Notes: 1 Measured for the CMPA2735075F at PDISS = 64 W. Electrical Characteristics (Frequency = 2.9 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V Gate Quiescent Voltage VGS(Q) – -2.7 – VDC Saturated Drain Current1 IDS 19.6 27.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 28 mA Small Signal Gain1 S21 – 29 – dB VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz Small Signal Gain2 S21 26.5 29 – dB VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz Small Signal Gain3 S21 26 27 – dB VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz Power Output1 POUT – 76 – W VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm, Freq = 2.9 GHz Power Output2 POUT 66 82 – W VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm, Freq = 3.1 GHz Power Output3 POUT 66 85 – W VDD = 28 V, IDQ = 700 mA, PIN = 28 dBm, Freq = 3.5 GHz Power Added Efficiency1 PAE – 54 – % VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz Power Added Efficiency2 PAE 45 54 – % VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz Power Added Efficiency3 PAE 45 53 – % VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz Power Gain1 GP – 23 – dB VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz Power Gain2 GP 20 21 – dB VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz Power Gain3 GP 20 21 – dB VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz Input Return Loss1 S11 – -11 -8 dB VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz Input Return Loss2 S11 – -16 -10 dB VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz Output Return Loss1 S22 – -9 –4 dB VDD = 28 V, IDQ = 700 mA, Freq = 3.1 GHz Output Return Loss2 S22 – -17 –10 dB VDD = 28 V, IDQ = 700 mA, Freq = 3.5 GHz VSWR – – 5:1 Y No damage at all phase angles, VDD = 28V, IDQ = 700mA, POUT = 75W CW DC Characteristics RF Characteristics VDS = 10 V, ID = 28 mA VDD = 28 V, IDQ = 700 mA, Freq = 2.9 GHz 2,3 Output Mismatch Stress Notes: 1 Scaled from PCM data. 2 All data pulse tested in CMPA2735075F-AMP 3 Pulse Width = 300 μS, Duty Cycle = 20%. Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance of the CMPA2735075F Gain and Input Return Loss vs Frequency of the CMPA2735075F Measured in CMPA2735075F-AMP Amplifier Circuit. VDS = 28 V, ISignal = 700 mA CGH2735075 Small Performance DS 40 10 35 5 0 25 -5 20 -10 IRL (dB) 15 -15 10 -20 5 Input Return Loss (dB) Gain (dB) Gain (dB) 30 -25 S21 (dB) S11 (dB) 0 -30 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 Frequency (GHz) Output Power, Gain and PAE vs Frequency of the CMPA2735075F Measured in CMPA2735075F-AMP Amplifier Circuit. PAEWidth and Pgain vs Frequency VDS = 28 V, IDSCGH2735075 = 700 mA,Pout, Pulse = 300 μS, Duty Cycle = 20% 51 Output Power (dBm) 50 90 49 80 70 PAE (%) 47 60 46 50 45 40 44 PAE (%) & Gain (dB) 48 Output Power (dBm) 100 30 Gain (dB) 43 20 42 10 41 0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 Frequency (GHz) Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulse Droop Performance CMPA2735075F Pulsed Power Performance 49.7 49.6 300 us 5 % 300 us 10 % 300 us 20 % 300 us 25 % 1 ms 5 % 1 ms 10 % 1 ms 20 % 1 ms 25 % 5 ms 5 % 5 ms 10 % 5 ms 20 % 5 ms 25 % 49.5 Output Power (dBm) 49.4 Pulse Width Duty Cycle (%) Droop (dB) 10 us 5-25 0.30 50 us 5-25 0.30 49.3 49.2 49.1 49.0 100 us 5-25 0.30 300 us 5-25 0.35 1 ms 5-25 0.40 5 ms 5-25 0.55 48.9 48.8 48.7 -1 0 1 2 3 4 5 6 Time (ms) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA2735075F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 15000pF, 100V, 0805, X7R 1 C2 CAP, 1000uF, 20%, 50V, ELECT, MVY, SMD 1 R1 RES, 1/8W, 1206, +/-5%, 0 OHMS 1 R2 RES, 1/16W, 0603, +/-5%, 10K OHMS 1 L1 FERRITE, 22 OHM, 0805, BLM21PG220SN1 1 J1,J2 CONNECTOR, N-TYPE, FEMALE, W/0.500 SMA FLNG 2 J3 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT JACK, SMD 1 PCB, TACONIC, RF-35-0100-CH/CH 1 CMPA2735075F 1 Q1 Notes 1 The CMPA2735075F is connected to the PCB with 2.0 mil Au bond wires. CMPA2735075F-AMP Demonstration Amplifier Circuit Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA2735075F-AMP Demonstration Amplifier Circuit Schematic CMPA2735075F-AMP Demonstration Amplifier Circuit Outline Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CMPA2735075F (Package Type — 780019) Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CMPA2735075F Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 2.7 GHz Upper Frequency 3.5 GHz Power Output 75 W Flange - Package Table 1. Note: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CMPA2735075F GaN HEMT Each Test board without GaN MMIC Each Test board with GaN MMIC installed Each CMPA2735075F-TB CMPA2735075F-AMP Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2735075F Rev 1.2 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA2735075F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf