2SC4367 Silicon NPN Epitaxial REJ03G0724-0200 (Previous ADE-208-1105) Rev.2.00 Aug.10.2005 Application High Frequency amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 100 200 600 150 –55 to +150 Unit V V V mA mA mW °C °C 2SC4367 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) fT Cob Min 30 20 3 — 40 — 600 — Typ — — — — — — 1000 1.3 Max — — — 1.0 — 1.0 — — Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 3 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA IC = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC4367 Main Characteristics Typical Output Characteristics 30 600 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 50 0 100 150 18 80 12 60 40 6 IB = 20 µA 4 8 12 16 10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 1,000 50 20 DC Current Transfer Ratio hFE VCE = 10 V Pulse Ta = 75 °C 25 –25 Collector Current IC (mA) 140 120 100 0 100 10 5 2 1 VCE = 10 V Pulse 500 Ta = 75°C 25 200 –25 100 50 20 10 0 0.2 0.4 0.6 0.8 1 1.0 2 5 10 20 50 100 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 10 IC = 10 IB Pulse Ta = –25°C 1.0 25 75 0.1 0.01 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 100 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 24 10,000 VCE = 10 V Pulse 1,000 100 1 2 5 10 20 50 Collector Current IC (mA) 100 2SC4367 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 10 f = 1 MHz IE = 0 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SC4367 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC4367TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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