2SD1209(K) Silicon NPN Epitaxial, Darlington REJ03G0783-0200 (Previous ADE-208-1143) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Symbol VCBO VCEO VEBO IC iC(peak) Ratings 60 60 7 1 2 Unit V V V A A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.9 150 –55 to +150 W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1209(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO ICEO IEBO hFE VCE(sat) VBE(sat) Min 60 — — 4000 — — Typ — — — — — — Max — 100 100 — 1.5 2.0 Unit V µA µA V V Test conditions IC = 0.1 mA, IE = 0 VCE = 60 V, RBE = ∞ VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 IC = 500 mA, IB = 0.5 mA*1 IC = 500 mA, IB = 0.5 mA*1 2SD1209(K) Main Characteristics Area of Safe Operation 10 0.8 10 20 50 100 105 16 14 12 10 8 0.3 4 0.2 2 µA 0.1 IB = 0 1 2 3 4 75 25 Ta = –25°C 104 VCE = 3 V Pulse 103 0.01 0.02 5 10 VCE = 3 V Ta = 25°C Pulse 0.5 0.2 0.1 0.05 0.02 0.2 0.5 1.0 2 5 10 Base to Emitter Voltage VBE (V) Rev.2.00 Aug 10, 2005 page 3 of 5 Collector to Emitter Saturation Voltage VCE(sat) (V) Typical Transfer Characteristics 0.05 0.1 0.2 0.5 1.0 Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (A) 5 DC Current Transfer Ratio vs. Collector Current 6 0.01 0.1 2 Typical Output Characteristics DC Current Transfer Ratio hFE Collector Current IC (A) 0.1 1.0 150 Collector to Emitter Voltage VCE (V) Ta = 25°C Pulse 0 0.2 Ambient Temperature Ta (°C) 0.5 0.4 0.5 ms 100 50 1.0 ms 0 iC(peak) 2 =1 0.4 Ta = 25°C 1 Shot Pulse 5 10 Collector Current IC (A) 1.2 PW Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve Collector to Emitter Saturation Voltage vs. Collector Current 10 IC = 1000 IB Pulse 5 2 Ta = –25°C 1.0 0.5 25 75 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current IC (A) 1.0 Base to Emitter Saturation Voltage VBE(sat) (V) 2SD1209(K) Rev.2.00 Aug 10, 2005 page 4 of 5 Base to Emitter Saturation Voltage vs. Collector Current 10 IC = 1000 IB Pulse 5 Ta = –25°C 2 1.0 25 75 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current IC (A) 1.0 2SD1209(K) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD1209KTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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