Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • • • • • <R> Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5509 Order Number 2SC5509-A Quantity 50 pcs (Non reel) 2SC5509-T2 2SC5509-T2-A 3 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg Ratings 15 3.3 1.5 100 190 150 −65 to +150 Unit V V V mA mW °C °C Note Free air. THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 95 650 Unit °C /W °C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 1 of 8 2SC5509 Chapter Title ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Symbol ICBO IEBO hFENote 1 fT |S21e|2 NF Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 10 mA – – 50 – – 70 600 600 100 nA nA – VCE = 3 V, IC = 90 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz 13 8 15 11 – – GHz dB – 1.2 1.7 dB – – – – 0.5 14 15 17 0.75 – – – pF dB dB dBm – 27 – dBm Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Cre Note 2 MAG Note 3 MSG Note 4 Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 4. MSG = S21 S12 5. Collector current when PO (1 dB) is output hFE CLASSIFICATION Rank FB/YFB Marking hFE Value T80 50 to 100 R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 2 of 8 2SC5509 Chapter Title TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Thermal/DC Characteristics COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE 50 When case temperature is specified 350 VCE = 2 V 330 Collector Current IC (mA) Total Power Dissipation Ptot (mW) 400 300 Mounted on 250 ceramic substrate (15 × 15 mm, t = 0.6 mm) 200 190 150 Free Air 100 30 20 10 50 0 25 50 75 100 125 0.2 0 150 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C), Case Temperature TC (˚C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 100 50 0 DC Current Gain hFE 150 Collector Current IC (mA) 40 0 μA IB = 1 10 μ A 1 000 900 μ A 800 μ A 700 μ A 600 μ A 500 μ A 400 μ A 300 μ A 200 μ A 100 μ A 1 2 3 4 VCE = 2 V 150 100 50 0 0.001 5 1.2 0.01 0.1 1 10 100 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Capacitance/fT Characteristics GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1.00 30 f = 1 MHz 0.80 0.60 0.40 0.20 0 1.0 2.0 3.0 4.0 5.0 Collector to Base Voltage VCB (V) Gain Bandwidth Product fT (GHz) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 25 VCE = 3 V f = 2 GHz 20 15 10 5 0 1 10 100 1 000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 3 of 8 2SC5509 Chapter Title Gain Characteristics Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V IC = 50 mA 35 30 MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 1.0 10.0 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 2 V f = 1 GHz 25 MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 Collector Current IC (mA) 100 Collector Current IC (mA) Output Characteristics Pout 15 150 25 125 20 100 IC 10 75 5 50 0 25 –5 –15 –10 –5 0 5 10 0 15 Input Power Pin (dBm) Output Power Pout (dBm) 20 VCE = 2 V f = 1 GHz Collector Current IC (mA) Output Power Pout (dBm) 25 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 150 VCE = 2 V f = 2 GHz 125 Pout 15 100 10 75 5 50 IC 0 –5 –15 –10 –5 0 25 5 10 Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 15 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 4 of 8 2SC5509 Chapter Title Noise Characteristics 6.0 6.0 20 Ga 3.0 15 2.0 10 5 1.0 25 20 4.0 Ga 3.0 15 2.0 10 5 1.0 NF NF 1 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 30 25 20 4.0 Ga 3.0 15 10 2.0 1.0 NF 1 10 5 0 100 Collector Current IC (mA) 30 VCE = 2 V f = 2.5 GHz 5.0 Noise Figure NF (dB) VCE = 2 V f = 2 GHz 5.0 Noise Figure NF (dB) 1 Collector Current IC (mA) 6.0 0.0 0.0 0 100 10 Associated Gain Ga (dB) 0.0 25 20 4.0 15 3.0 Ga 10 2.0 1.0 0.0 NF 1 10 5 Associated Gain Ga (dB) 4.0 30 VCE = 2 V f = 1.5 GHz 5.0 Noise Figure NF (dB) 25 Associated Gain Ga (dB) 30 VCE = 2 V f = 1 GHz 5.0 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 5 of 8 2SC5509 Chapter Title EQUAL NF CIRCLE VCE = 2 V IC = 10 mA f = 1 GHz Unstable Area NFmin = 0.95 dB Γopt 1.5 dB 2.0 dB 2.5 dB 3.0 dB 3.5 dB 4.0 dB VCE = 2 V IC = 10 mA f = 2 GHz NFmin = 1.1 dB Γopt 1.5 dB B 2.0 d dB 2.5 .0 dB dB B 3 3.5 .0 d 4 R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 6 of 8 2SC5509 Chapter Title NOISE PARAMETERS VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 20 mA Γopt f (GHz) NFmin (dB) Ga (dB) MAG. ANG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.70 0.74 0.78 0.98 1.10 1.14 1.18 1.39 18.0 17.0 16.2 13.6 12.5 12.2 11.8 9.9 0.17 0.18 0.20 0.32 0.40 0.43 0.46 0.56 93.0 103.0 112.7 155.4 176.2 −177.8 −172.2 −151.8 Rn/50 f (GHz) NFmin (dB) Ga (dB) 0.11 0.11 0.11 0.09 0.07 0.06 0.06 0.08 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.12 1.15 1.18 1.31 1.38 1.41 1.43 1.56 20.7 19.7 18.8 15.7 14.4 14.0 13.6 11.5 VCE = 2 V, IC = 10 mA Γopt MAG. ANG. 0.30 0.31 0.32 0.39 0.45 0.47 0.49 0.56 −164.8 −162.7 −160.7 −151.5 −146.3 −144.6 −142.9 −133.5 Rn/50 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.14 VCE = 2 V, IC = 50 mA Γopt MAG. ANG. f (GHz) NFmin (dB) Ga (dB) 0.8 0.9 0.87 0.90 19.6 18.6 0.13 0.15 1.0 1.5 1.8 1.9 2.0 2.5 0.93 1.07 1.15 1.18 1.20 1.35 17.8 14.8 13.6 13.2 12.8 10.9 0.17 0.30 0.39 0.41 0.44 0.53 R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Γopt MAG. ANG. Rn/50 f (GHz) NFmin (dB) Ga (dB) 170.3 171.5 0.09 0.09 0.8 0.9 1.75 1.78 21.3 20.3 0.49 0.49 −159.4 −157.2 0.10 0.10 173.0 −174.1 −164.1 −160.6 −157.2 −142.3 0.09 0.08 0.07 0.07 0.07 0.10 1.0 1.5 1.8 1.9 2.0 2.5 1.80 1.92 2.00 2.02 2.04 2.17 19.4 16.2 14.8 14.4 13.9 11.8 0.50 0.55 0.59 0.60 0.61 0.65 −154.9 −144.7 −139.1 −137.3 −135.5 −126.4 0.11 0.14 0.17 0.19 0.20 0.28 Rn/50 Page 7 of 8 2SC5509 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) (Top View) (Bottom View) 0.65 1.30 3 0.30+0.1 –0.05 0.30+0.1 –0.05 4 1 (1.05) 0.65 0.60 0.65 T80 1.25 2 1.25±0.1 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 2.0±0.1 0.11+0.1 –0.05 0.5 0.59±0.05 <R> Chapter Title PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 8 of 8 Revision History 2SC5509 Data Sheet Rev. Date Page 1.00 3.00 Sep 9, 2004 Mar 5, 2013 − Throughout p.1 p.5 p.8 Description Summary First edition issued Renesas format is applied to this data sheet. 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