RENESAS 2SC5509

Preliminary Data Sheet
2SC5509
NPN SILICON RF TRANSISTOR
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
•
•
•
•
•
<R>
Ideal for medium output power amplification
NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
fT = 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5509
Order Number
2SC5509-A
Quantity
50 pcs (Non reel)
2SC5509-T2
2SC5509-T2-A
3 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PtotNote
Tj
Tstg
Ratings
15
3.3
1.5
100
190
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air.
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Ratings
95
650
Unit
°C /W
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 1 of 8
2SC5509
Chapter Title
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFENote 1
fT
|S21e|2
NF
Conditions
MIN.
TYP.
MAX.
Unit
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 10 mA
–
–
50
–
–
70
600
600
100
nA
nA
–
VCE = 3 V, IC = 90 mA, f = 2 GHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
13
8
15
11
–
–
GHz
dB
–
1.2
1.7
dB
–
–
–
–
0.5
14
15
17
0.75
–
–
–
pF
dB
dB
dBm
–
27
–
dBm
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Cre Note 2
MAG Note 3
MSG Note 4
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
VCE = 2 V, IC = 50 mA, f = 2 GHz
VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
3rd Order Intermodulation
Distortion Output Intercept Point
OIP3
VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K – √ (K2 – 1) )
S12
4. MSG =
S21
S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
FB/YFB
Marking
hFE Value
T80
50 to 100
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 2 of 8
2SC5509
Chapter Title
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
50
When case temperature
is specified
350
VCE = 2 V
330
Collector Current IC (mA)
Total Power Dissipation Ptot (mW)
400
300
Mounted on
250 ceramic substrate
(15 × 15 mm, t = 0.6 mm)
200
190
150
Free Air
100
30
20
10
50
0
25
50
75
100
125
0.2
0
150
0.4
0.6
0.8
1.0
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
0
DC Current Gain hFE
150
Collector Current IC (mA)
40
0 μA
IB = 1 10 μ A
1 000
900 μ A
800 μ A
700 μ A
600 μ A
500 μ A
400 μ A
300 μ A
200 μ A
100 μ A
1
2
3
4
VCE = 2 V
150
100
50
0
0.001
5
1.2
0.01
0.1
1
10
100
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Capacitance/fT Characteristics
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1.00
30
f = 1 MHz
0.80
0.60
0.40
0.20
0
1.0
2.0
3.0
4.0
5.0
Collector to Base Voltage VCB (V)
Gain Bandwidth Product fT (GHz)
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
25
VCE = 3 V
f = 2 GHz
20
15
10
5
0
1
10
100
1 000
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 3 of 8
2SC5509
Chapter Title
Gain Characteristics
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
IC = 50 mA
35
30
MSG
MAG
25
20
15
10
|S21e|2
5
0
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 2 GHz
20
MSG
MAG
15
10
|S21e|2
5
0
1
10
Collector Current IC (mA)
100
Collector Current IC (mA)
Output Characteristics
Pout
15
150
25
125
20
100
IC
10
75
5
50
0
25
–5
–15
–10
–5
0
5
10
0
15
Input Power Pin (dBm)
Output Power Pout (dBm)
20
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
Output Power Pout (dBm)
25
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
150
VCE = 2 V
f = 2 GHz
125
Pout
15
100
10
75
5
50
IC
0
–5
–15
–10
–5
0
25
5
10
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
0
15
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 4 of 8
2SC5509
Chapter Title
Noise Characteristics
6.0
6.0
20
Ga
3.0
15
2.0
10
5
1.0
25
20
4.0
Ga
3.0
15
2.0
10
5
1.0
NF
NF
1
0
100
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6.0
30
25
20
4.0
Ga
3.0
15
10
2.0
1.0
NF
1
10
5
0
100
Collector Current IC (mA)
30
VCE = 2 V
f = 2.5 GHz
5.0
Noise Figure NF (dB)
VCE = 2 V
f = 2 GHz
5.0
Noise Figure NF (dB)
1
Collector Current IC (mA)
6.0
0.0
0.0
0
100
10
Associated Gain Ga (dB)
0.0
25
20
4.0
15
3.0
Ga
10
2.0
1.0
0.0
NF
1
10
5
Associated Gain Ga (dB)
4.0
30
VCE = 2 V
f = 1.5 GHz
5.0
Noise Figure NF (dB)
25
Associated Gain Ga (dB)
30
VCE = 2 V
f = 1 GHz
5.0
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 5 of 8
2SC5509
Chapter Title
EQUAL NF CIRCLE
VCE = 2 V
IC = 10 mA
f = 1 GHz
Unstable Area
NFmin = 0.95 dB
Γopt
1.5 dB
2.0 dB
2.5 dB
3.0 dB
3.5 dB
4.0 dB
VCE = 2 V
IC = 10 mA
f = 2 GHz
NFmin = 1.1 dB
Γopt
1.5 dB
B
2.0 d
dB
2.5 .0 dB dB B
3 3.5 .0 d
4
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 6 of 8
2SC5509
Chapter Title
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 20 mA
Γopt
f
(GHz)
NFmin
(dB)
Ga
(dB)
MAG.
ANG.
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.70
0.74
0.78
0.98
1.10
1.14
1.18
1.39
18.0
17.0
16.2
13.6
12.5
12.2
11.8
9.9
0.17
0.18
0.20
0.32
0.40
0.43
0.46
0.56
93.0
103.0
112.7
155.4
176.2
−177.8
−172.2
−151.8
Rn/50
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.11
0.11
0.11
0.09
0.07
0.06
0.06
0.08
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.12
1.15
1.18
1.31
1.38
1.41
1.43
1.56
20.7
19.7
18.8
15.7
14.4
14.0
13.6
11.5
VCE = 2 V, IC = 10 mA
Γopt
MAG.
ANG.
0.30
0.31
0.32
0.39
0.45
0.47
0.49
0.56
−164.8
−162.7
−160.7
−151.5
−146.3
−144.6
−142.9
−133.5
Rn/50
0.08
0.09
0.09
0.10
0.10
0.10
0.11
0.14
VCE = 2 V, IC = 50 mA
Γopt
MAG.
ANG.
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.8
0.9
0.87
0.90
19.6
18.6
0.13
0.15
1.0
1.5
1.8
1.9
2.0
2.5
0.93
1.07
1.15
1.18
1.20
1.35
17.8
14.8
13.6
13.2
12.8
10.9
0.17
0.30
0.39
0.41
0.44
0.53
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Γopt
MAG.
ANG.
Rn/50
f
(GHz)
NFmin
(dB)
Ga
(dB)
170.3
171.5
0.09
0.09
0.8
0.9
1.75
1.78
21.3
20.3
0.49
0.49
−159.4
−157.2
0.10
0.10
173.0
−174.1
−164.1
−160.6
−157.2
−142.3
0.09
0.08
0.07
0.07
0.07
0.10
1.0
1.5
1.8
1.9
2.0
2.5
1.80
1.92
2.00
2.02
2.04
2.17
19.4
16.2
14.8
14.4
13.9
11.8
0.50
0.55
0.59
0.60
0.61
0.65
−154.9
−144.7
−139.1
−137.3
−135.5
−126.4
0.11
0.14
0.17
0.19
0.20
0.28
Rn/50
Page 7 of 8
2SC5509
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
(Top View)
(Bottom View)
0.65
1.30
3
0.30+0.1
–0.05
0.30+0.1
–0.05
4
1
(1.05)
0.65
0.60
0.65
T80
1.25
2
1.25±0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
2.0±0.1
0.11+0.1
–0.05
0.5
0.59±0.05
<R>
Chapter Title
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
Page 8 of 8
Revision History
2SC5509 Data Sheet
Rev.
Date
Page
1.00
3.00
Sep 9, 2004
Mar 5, 2013
−
Throughout
p.1
p.5
p.8
Description
Summary
First edition issued
Renesas format is applied to this data sheet.
ORDERING INFORMATION is modified.
Up to date S-PARAMETERS.
Added a drawing backside to PACKAGE DIMENSIONS.
All trademarks and registered trademarks are the property of their respective owners.
C-1
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[Colophon 2.2]