NE664M04 / 2SC5754

DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04 / 2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency: ηC = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
NE664M04-A
2SC5754-A
50 pcs (Non reel)
NE664M04-T2-A
2SC5754-T2-A
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
The mark • shows major revised points.
JEITA
Part No.
NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
IC
500
mA
Ptot
735
mW
Collector Current
Total Power Dissipation
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
2
Symbol
Test Conditions
Ratings
Unit
Rth j-a1
Mounted on 38 × 38 mm, t = 0.4 mm
polyimide PCB
170
°C/W
Rth j-a2
Stand alone device in free air
570
°C/W
Data Sheet PU10008EJ02V0DS
NE664M04 / 2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
1 000
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
−
−
1 000
nA
VCE = 3 V, IC = 100 mA
40
60
100
−
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
16
20
−
GHz
5.0
6.5
−
dB
hFE
DC Current Gain
Note 1
RF Characteristics
Gain Bandwidth Product
fT
Insertion Power Gain
⏐S21e⏐
VCE = 3 V, IC = 100 mA, f = 2 GHz
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0 mA, f = 1 MHz
−
1.0
1.5
pF
VCE = 3 V, IC = 100 mA, f = 2 GHz
−
12.0
−
dB
GL
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
−
12.0
−
dB
PO (1 dB)
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
−
26.0
−
dBm
ηC
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
−
60
−
%
2
Maximum Available Power Gain
Linear Gain
Gain 1 dB Compression Output Power
Collector Efficiency
Note 2
MAG
Note 3
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
(K – √ (K2 – 1) )
S12
hFE CLASSIFICATION
Rank
FB
Marking
R57
hFE Value
40 to 100
Data Sheet PU10008EJ02V0DS
3
NE664M04 / 2SC5754
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C)
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
1 000
Mounted on Polyimide PCB
800 (38 × 38 mm, t = 0.4 mm)
735
600
400
Stand alone device
in free air
205
200
0
25
1 000
50
75
100
125
2.0
1.5
1.0
0.5
3
4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
400
10
1
0.1
0.01
IB : 0.5 mA step
7 mA
350
6 mA
300
5 mA
250
4 mA
200
3 mA
150
2 mA
100
1 mA
50
0.6
0.7
0.8
0.9
1.0
0
VCE = 3 V
100
1
10
100
1
2
3
4
IB = 0.5 mA
5
6
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
DC Current Gain hFE
2
Collector to Base Voltage VCB (V)
VCE = 3 V
0.001
0.5
1 000
Collector Current IC (mA)
4
1
Ambient Temperature TA (˚C)
100
10
f = 1 MHz
0
150
Collector Current IC (mA)
Collector Current IC (mA)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Data Sheet PU10008EJ02V0DS
NE664M04 / 2SC5754
15
10
5
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
1
10
100
1 000
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
VCE = 3 V
f = 0.5 GHz
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
VCE = 3 V
IC = 100 mA
MSG
MAG
25
20
15
10
5
|S21e|2
0
0.1
1
10
Collector Current IC (mA)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V
f = 1 GHz
MSG
MAG
15
|S21e|2
10
5
0
1
10
100
1 000
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
25
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current IC (mA)
20
VCE = 3 V
f = 2 GHz
15
MSG
MAG
10
|S21e|2
5
0
1
10
100
1 000
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V
f = 2.5 GHz
15
MSG
10
MAG
5
|S21e|2
0
1
10
100
1 000
Collector Current IC (mA)
Data Sheet PU10008EJ02V0DS
5
10
100
5
50
0
–15
ηC
–10
–5
0
5
0
15
10
Output Power Pout (dBm), Power Gain GP (dB)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
250
Pout
20
200
IC
15
GP
10
150
100
50
5
ηC
0
–10
–5
0
5
10
0
20
15
Output Power Pout (dBm), Power Gain GP (dB)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
250
Pout
20
200
IC
15
10
GP
100
50
5
0
–10
150
ηC
–5
0
5
10
Input Power Pin (dBm)
15
0
20
25
250
Pout
20
200
IC
15
150
GP
10
100
5
50
ηC
0
–5
0
5
10
15
0
25
20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
250
Pout
20
200
IC
15
GP
150
100
10
50
5
ηC
0
–10
–5
0
5
10
0
20
15
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
20
15
250
Pout
200
IC
GP
50
5
0
–10
Data Sheet PU10008EJ02V0DS
150
100
10
Remark The graphs indicate nominal characteristics.
6
300
VCE = 3.2 V, f = 2.4 GHz
ICq = 20 mA, 1/2 Duty
ηC
–5
0
5
10
Input Power Pin (dBm)
15
0
20
Collector Current IC (mA), Collector Efficiency η C (%)
150
30
Collector Current IC (mA), Collector Efficiency η C (%)
15
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current IC (mA), Collector Efficiency η C (%)
200
GP
Output Power Pout (dBm), Power Gain GP (dB)
20
IC
Output Power Pout (dBm), Power Gain GP (dB)
250
Pout
Output Power Pout (dBm), Power Gain GP (dB)
25
300
VCE = 3.2 V, f = 0.9 GHz
ICq = 20 mA, 1/2 Duty
Collector Current IC (mA), Collector Efficiency η C (%)
30
Collector Current IC (mA), Collector Efficiency η C (%)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current IC (mA), Collector Efficiency η C (%)
Output Power Pout (dBm), Power Gain GP (dB)
NE664M04 / 2SC5754
NE664M04 / 2SC5754
POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value)
Frequency
f (GHz)
Collector to Emitter Voltage
VCE (V)
Supply Impedance
ZS (Ω)
Load Impedance
ZL (Ω)
0.9
2.8 to 3.6
8.4 − 5.2 j
15.1 − 4.3 j
1.8
2.8 to 3.6
6.3 − 16.4 j
15.8 − 6.9 j
2.4
2.8 to 3.6
5.9 − 22.1 j
15.2 − 17.9 j
ZL
ZS
RF input line
ZS
Tr.
GND
B
E
E
C
GND
RF output line
ZL
f = 0.9 GHz
f = 1.8 GHz
ZL
ZL
ZS
ZS
f = 2.4 GHz
ZL
ZS
Data Sheet PU10008EJ02V0DS
7
NE664M04 / 2SC5754
APPLICATION EXAMPLE (Low-cost PA solution)
Bluetooth Power Class 1
f = 2.4 GHz
R57
T80
0 dBm
13 dBm
NE663M04
2SC5509
22 dBm
NE664M04
2SC5754
SS Cordless Phone
f = 2.4 GHz
R57
20 dBm
26 dBm
NE664M04
2SC5754
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
R57
R55
5 dBm
A
16 dBm
NE678M04
2SC5753
–3 dBm
25 dBm
NE664M04
2SC5754
35 dBm
NE5520379A
(MOS FET)
R57
9 dBm
NE680M03
2SC5434
(3-pin TUSMM)
8
1
00
9Z
Cordless Phone
f = 0.9 GHz
TH
3
25 dBm
NE664M04
2SC5754
Data Sheet PU10008EJ02V0DS
NE664M04 / 2SC5754
EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD
PCB Pattern and Element Layout
VB
VC
C2
C4
RF in
SL4
C3
C1
C5
SL1
SL2
RF out
C6
SL3 SL5
Remarks 1. 38 × 38 mm, t = 0.4 mm,
εr = 4.55 double-sided
Tr. (NE664M04 / 2SC5754)
copper-clad polyimide board
2. Back side : GND pattern
3. Solder plating on pattern
4.
Equivalent Circuit
C2
VB
VC
SL3
: Through holes
C4
SL4
SL5
C6
SL1
RF in
SL2
C1
RF out
C5
Tr.
C3
Parts List
Parts
Value
Size
Classification
C1, C6
18 pF
Multiplayer ceramic chip capacitor
C2
3 300 pF
Multiplayer ceramic chip capacitor
C3
3 pF
Multiplayer ceramic chip capacitor
C4
15 pF
Multiplayer ceramic chip capacitor
C5
1.5 pF
Multiplayer ceramic chip capacitor
SL1, SL4
w = 0.20 mm
Strip line
SL2
w = 0.76 mm, l = 2.5 mm
Strip line
SL3
w = 0.76 mm, l = 5 mm
Strip line
SL5
w = 0.76 mm, l = 1.5 mm
Strip line
Data Sheet PU10008EJ02V0DS
9
NE664M04 / 2SC5754
IC
15
150
100
GP
10
200
50
5
ηC
0
–10
–5
0
5
10
0
20
15
Input Power Pin (dBm)
Output Power Pout (dBm), Power Gain GP (dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
250
Pout
20
IC
15
10
150
GP
100
50
5
0
–10
200
ηC
–5
0
5
10
Input Power Pin (dBm)
15
0
20
30
25
250
Pout
20
IC
15
200
150
GP
100
10
50
5
ηC
0
–10
–5
0
5
10
0
20
15
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
20
15
250
Pout
IC
200
150
GP
10
100
5
50
0
–10
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
10
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
Data Sheet PU10008EJ02V0DS
ηC
–5
0
5
10
Input Power Pin (dBm)
15
0
20
Collector Current IC (mA), Collector Efficiency η C (%)
Pout
20
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current IC (mA), Collector Efficiency η C (%)
250
Output Power Pout (dBm), Power Gain GP (dB)
25
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
Output Power Pout (dBm), Power Gain GP (dB)
30
Collector Current IC (mA), Collector Efficiency η C (%)
Output Power Pout (dBm), Power Gain GP (dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current IC (mA), Collector Efficiency η C (%)
EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD
NE664M04 / 2SC5754
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
0.65
0.65
1.30
3
4
1
0.30
0.30+0.1
–0.05
+0.1
–0.05
0.60
0.65
0.11+0.1
–0.05
0.59 ± 0.05
1.25
R57
2.0 ± 0.1
2
1.25 ± 0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05 ± 0.1
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
Data Sheet PU10008EJ02V0DS
11
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