A Business Partner of Renesas Electronics Corporation. Preliminary NE461M02 / 2SC5337 JEITA Part No. Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC4536 <R> ORDERING INFORMATION Part Number Order Number Package NE461M02 2SC5337 NE461M02-AZ 2SC5337-AZ 4-pin power NE461M02-T1 2SC5337-T1 NE461M02-T1-AZ 2SC5337-T1-AZ (Pb-Free) minimold Note Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form • Magazine case • 12 mm wide embossed taping • Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V IC 250 mA 2.0 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating) CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NE461M02 / 2SC5337 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 – 0 . 01 5 .0 μA Emitter Cut-off Current IEBO VBE = 2 V, IC = 0 – 0 . 03 5 .0 μA VCE = 10 V, IC = 50 mA 60 120 200 – VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 – dB DC Current Gain hFE Note 1 RF Characteristics Insertion Power Gain S21e Noise Figure (1) Noise Figure (2) 2 NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 3.5 dB NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 3.5 dB 2nd Order Intermoduration Distortion IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, Vin = 105 dBμV/75 Ω, f1 = 190 MHz, f2 = 90 MHz, f = f1 − f2 – 59.0 – dB 3rd Order Intermoduration Distortion IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, Vin = 105 dBμV/75 Ω, f1 = 190 MHz, f2 = 200 MHz, f = 2 × f1 − f2 – 82.0 – dB Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. RS = RL = 50 Ω, tuned <R> hFE CLASSIFICATION Rank QR/YQR QS/YQS Marking QR QS hFE Value 60 to 120 100 to 200 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 2 of 5 A Business Partner of Renesas Electronics Corporation. NE461M02 / 2SC5337 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 1.0 0 50 f = 1 MHz 3.0 2.0 1.0 0.5 0.3 150 1 3 5 10 20 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT IB = 0.6 mA 0.4 mA 80 60 0.3 mA 40 0.2 mA 20 0.1 mA 0 10 300 10 100 50 10 0.1 20 1 10 100 1 000 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 5 3 2 1 0.5 VCE = 10 V f = 1 GHz 0.3 10 30 50 70 100 Collector Current IC (mA) 30 VCE = 10 V 0.5 mA DC Current Gain hFE Collector Current IC (mA) 5.0 Ambient Temperature TA (˚C) 100 Gain Bandwidth Product fT (GHz) 100 Reverse Transfer Capacitance Cre (pF) Mounted on Ceramic Substrate (16 cm2 × 0.7 mm (t) ) Insertion Power Gain |S21e|2 (dB) Total Power Dissipation Ptot (W) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VCE = 10 V f = 1 GHz 10 5 0 10 30 50 70 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 3 of 5 A Business Partner of Renesas Electronics Corporation. NE461M02 / 2SC5337 VCE = 10 V f = 1 GHz 6 |S21e|2 20 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V IC = 50 mA Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) INSERTION POWER GAIN, MAG vs. FREQUENCY MAG 10 5 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 0 5 3rd Order Intermodulation Distortion IM3 (dB) 2nd Order Intermodulation Distortion (+) IM2+ (dB) 2nd Order Intermodulation Distortion (–) IM2– (dB) Frequency f (GHz) 80 10 20 50 100 Collector Current IC (mA) IM3, IM2+, IM2– vs. COLLECTOR CURRENT VCE = 10 V IM3 70 60 IM2+ IM2– 50 40 30 10 IM3 : Vin = 110 dBμV/75 Ω 2 tone each f = 2 × 190 – 200 MHz IM2+ : Vin = 105 dBμV/75 Ω 2 tone each f = 90 + 100 MHz IM2– : Vin = 105 dBμ V/75 Ω 2 tone each f = 190 – 90 MHz 50 100 300 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 4 of 5 A Business Partner of Renesas Electronics Corporation. NE461M02 / 2SC5337 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 2.1 1.6 0.8 0.85 E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 5 of 5 NE461M02 / 2SC5337 Data Sheet Revision History Description Rev. Date Page Summary 1.00 Mar 01, 1996 – First edition issued 2.00 Aug 28, 2001 – Second edition issued 2.10 Sep 06, 2001 – Second V1 edition issued 3.00 Sep 14, 2012 Throughout The company name is changed to Renesas Electronics Corporation. p.1 Modification of ORDERING INFORMATION p.2 Modification of ELECTRICAL CHARACTERISTICS p.2 Modification of hFE CLASSIFICATION p.4 Modification of method for obtaining S-parameters All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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